Chemical-mechanical planarization composition having PVNO and associated method for use
A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains an abrasive, a dielectric protector comprising a polyvinylpyridine-N-oxide polymer, an oxiding agent, and water. The composition affords minimization of local erosion effects and possesses high selectivities for metal and barrier material removal in relation to dielectric layer materials in metal CMP. The composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., step 1 copper CMP processes and step 2 copper CMP processes).
1 . A step 2 copper chemical-mechanical planarization composition comprising:
a) an abrasive;
b) a dielectric protector comprising a polyvinylpyridine-N-oxide polymer;
c) an oxidizing agent; and
d) water.
2 . The step 2 copper chemical-mechanical planarization composition of claim 1 wherein the abrasive is a colloidal abrasive.
3 . The step 2 copper chemical-mechanical planarization composition of claim 1 wherein the abrasive is silica or surface-modified silica.
4 . The step 2 copper chemical-mechanical planarization composition of claim 1 wherein the abrasive is boron surface-modified silica or aluminate surface-modifed silica.
5 . The step 2 copper chemical-mechanical planarization composition of claim 1 wherein the polyvinylpyridine-N-oxide polymer is present at a weight percent level in the composition ranging from 0.05 weight % to 3 weight %.
6 . The step 2 copper chemical-mechanical planarization composition of claim 5 wherein the polyvinylpyridine-N-oxide polymer is present at a weight percent level in the composition ranging from 0.05 weight % to 3 weight % and the Polyvinylpyridine-N-oxide polymer:Abrasive ratio is greater than 0.05.
7 . The step 2 copper chemical-mechanical planarization composition of claim 1 wherein the polyvinylpyridine-N-oxide polymer is present in an amount sufficient to protect the dielectric.
8 . The step 2 copper chemical-mechanical planarization composition of claim 1 wherein the polyvinylpyridine-N-oxide polymer is a homopolymer of polyvinylpyridine-N-oxide.
9 . The step 2 copper chemical-mechanical planarization composition of claim 1 wherein the polyvinylpyridine-N-oxide polymer has a number average molecular weight ranging from 25,000 Daltons to 250,000 Daltons.
10 . The step 2 copper chemical-mechanical planarization composition of claim 1 wherein the oxidizing agent is hydrogen peroxide.
11 . The step 2 copper chemical-mechanical planarization composition of claim 10 wherein hydrogen peroxide is present at a level ranging from 0.05 weight % to 6 weight % of the total weight of the composition.
12 . The step 2 copper chemical-mechanical planarization composition of claim 1 wherein the composition has a pH ranging from 6 to 10.
13 . The step 2 copper chemical-mechanical planarization composition of claim 1 further comprising d) a surfactant.
14 . The step 2 copper chemical-mechanical planarization composition of claim 13 wherein the surfactant is a nonionic surfactant.
15 . The step 2 copper chemical-mechanical planarization composition of claim 1 further comprising e) a corrosion inhibitor.
16 . The step 2 copper chemical-mechanical planarization composition of claim 1 wherein the polyvinylpyridine-N-oxide polymer is solubilized and/or dispersed in water.
17 . A method of step 2 copper chemical-mechanical planarization comprising the steps of:
A) placing a substrate comprising copper, at least one dielectric material and at least one barrier material in contact with a polishing pad;
B) delivering a chemical-mechanical planarization composition comprising a) an abrasive; b) a dielectric protector comprising a polyvinylpyridine-N-oxide polymer; c) an oxidizing agent; and d) water; and
C) planarizing the substrate with the step 2 copper chemical-mechanical planarization composition.
18 . The method of claim 17 wherein the abrasive in the composition employed in the method is a colloidal abrasive.
19 . The method of claim 18 wherein the abrasive is silica or surface-modified silica.
20 . The method of claim 18 wherein the abrasive is boron surface-modified silica or aluminate surface-modifed silica.
21 . The method of claim 17 wherein the polyvinylpyridine-N-oxide polymer is present at a weight percent level ranging from 0.05 weight % to 3 weight % in the composition employed in the method.
22 . The method of claim 21 wherein the polyvinylpyridine-N-oxide polymer is present at a weight percent level ranging from 0.05 weight % to 3 weight % in the composition employed in the method and the Polyvinylpyridine-N-oxide polymer:Abrasive ratio is greater than 0.05.
23 . The method of claim 17 wherein the polyvinylpyridine-N-oxide polymer in the composition employed in the method is present in an amount sufficient to protect the dielectric.
24 . The method of claim 17 wherein the polyvinylpyridine-N-oxide polymer is a homopolymer of polyvinylpyridine-N-oxide.
25 . The method of claim 17 wherein the polyvinylpyridine-N-oxide polymer in the composition employed in the method has a number average molecular weight ranging from 25,000 Daltons to 250,000 Daltons.
26 . The method of claim 17 wherein the oxidizing agent in the composition employed in the method is hydrogen peroxide.
27 . The method of claim 17 wherein hydrogen peroxide is present at a weight percent level ranging from 0.05 weight % to 6 weight % of the total weight of the composition employed in the method.
28 . The method of claim 17 wherein the composition employed in the method has a pH ranging from 6 to 10.
29 . The method of claim 17 wherein the composition employed in the method further comprises d) a surfactant.
30 . The method of claim 29 wherein the surfactant is a nonionic surfactant.
31 . The method of claim 17 wherein the composition employed in the method further comprises d) a corrosion inhibitor.
32 . The method of claim 17 wherein the polyvinylpyridine-N-oxide polymer in the composition employed in the method is solubilized and/or dispersed in water.
33 . A step 1 copper chemical-mechanical planarization composition comprising:
a) an abrasive;
b) a dielectric protector comprising apolyvinylpyridine-N-oxide polymer;
c) an oxidizing agent; and
d) water.
34 . The step 1 copper chemical-mechanical planarization composition of claim 33 wherein the abrasive is a colloidal abrasive.
35 . The step 1 copper chemical-mechanical planarization composition of claim 33 wherein the abrasive is silica or surface-modified silica.
36 . The step 1 copper chemical-mechanical planarization composition of claim 33 wherein the abrasive is boron surface-modified silica or aluminate surface-modifed silica.
37 . The step 1 copper chemical-mechanical planarization composition of claim 33 wherein the polyvinylpyridine-N-oxide polymer is present at a weight percent level in the composition ranging from 0.01 weight % to 0.75 weight %.
38 . The step 1 copper chemical-mechanical planarization composition of claim 37 wherein the polyvinylpyridine-N-oxide polymer is present at a weight percent level in the composition ranging from 0.01 weight % to 0.75 weight % and the Polyvinylpyridine-N-oxide polymer:Abrasive ratio is greater than 0.05.
39 . The step 1 copper chemical-mechanical planarization composition of claim 33 wherein the polyvinylpyridine-N-oxide polymer is present in an amount sufficient to protect the dielectric.
40 . The step 1 copper chemical-mechanical planarization composition of claim 33 wherein the polyvinylpyridine-N-oxide polymer is a homopolymer of polyvinylpyridine-N-oxide.
41 . The step 1 copper chemical-mechanical planarization composition of claim 33 wherein the polyvinylpyridine-N-oxide polymer has a number average molecular weight ranging from 25,000 Daltons to 250,000 Daltons.
42 . The step 1 copper chemical-mechanical planarization composition of claim 33 wherein the oxidizing agent is hydrogen peroxide.
43 . The step 1 copper chemical-mechanical planarization composition of claim 42 wherein hydrogen peroxide is present at a weight percent level ranging from 0.05 weight % to 6 weight % of the total weight of the composition.
44 . The step 1 copper chemical-mechanical planarization composition of claim 33 wherein the composition has a pH ranging from 7 to 9.
45 . The step 1 copper chemical-mechanical planarization composition of claim 33 further comprising e) a surfactant.
46 . The step 1 copper chemical-mechanical planarization composition of claim 45 wherein the surfactant is a nonionic surfactant.
47 . The step 1 copper chemical-mechanical planarization composition of claim 33 further comprising e) a corrosion inhibitor.
48 . The step 1 copper chemical-mechanical planarization composition of claim 33 wherein the polyvinylpyridine-N-oxide polymer is solubilized and/or dispersed in water.
49 . A method of step 1 copper chemical-mechanical planarization comprising the steps of:
A) placing a substrate comprising copper, at least one dielectric material and at least one barrier material in contact with a polishing pad;
B) delivering a chemical-mechanical planarization composition comprising a) an abrasive; b) a dielectric protector comprising a polyvinylpyridine-N-oxide polymer; c) an oxidizing agent; and d) water; and
C) planarizing the substrate with the step 1 copper chemical-mechanical planarization composition.
50 . The method of claim 49 wherein the abrasive in the composition employed in the method is a colloidal abrasive.
51 . The method of claim 49 wherein the abrasive is silica or surface-modified silica.
52 . The method of claim 49 wherein the abrasive is boron surface-modified silica or aluminate surface-modifed silica.
53 . The method of claim 49 wherein the polyvinylpyridine-N-oxide polymer is present at a weight percent level in the composition employed in the method ranging from 0.01 weight % to 0.75 weight %.
54 . The method of claim 53 wherein the polyvinylpyridine-N-oxide polymer is present at a weight percent level in the composition employed in the method ranging from 0.01 weight % to 0.75 weight % and the Polyvinylpyridine-N-oxide polymer:Abrasive ratio is greater than 0.05.
55 . The method of claim 49 wherein the polyvinylpyridine-N-oxide polymer in the composition employed in the method is present in an amount sufficient to protect the dielectric.
56 . The method of claim 49 wherein the polyvinylpyridine-N-oxide polymer is a homopolymer of polyvinylpyridine-N-oxide.
57 . The method of claim 49 wherein the polyvinylpyridine-N-oxide polymer in the composition employed in the method has a number average molecular weight ranging from 25,000 Daltons to 250,000 Daltons.
58 . The method of claim 49 wherein the oxidizing agent in the composition employed in the method is hydrogen peroxide.
59 . The method of claim 49 wherein hydrogen peroxide is present at a weight percent level in the composition employed in the method ranging from 0.05 weight % to 6 weight % of the total weight of the composition.
60 . The method of claim 49 wherein the composition has a pH ranging from 7 to 9.
61 . The method of claim 49 wherein the composition employed in the method further comprises D) a surfactant.
62 . The method of claim 61 wherein the surfactant is a nonionic surfactant.
63 . The method of claim 49 wherein the composition employed in the method further comprises D) a corrosion inhibitor.
64 . The method of claim 49 wherein the polyvinylpyridine-N-oxide polymer in the composition employed in the method is solubilized and/or dispersed in water.