IP Library Granted Patent US 7,199,882
Granted Patent B2
US 7,199,882 · App. 11/102,334 · Granted Apr 3, 2007

Method and system for high speed measuring of microscopic targets

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Quick Facts
Patent No.
US 7,199,882
App. No.
11/102,334
Granted
Apr 3, 2007
Kind
B2
Abstract

A system including confocal and triangulation-based scanners or subsystems provides data which is both acquired and processed under the control of a control algorithm to obtain information such as dimensional information about microscopic targets which may be “non-cooperative.” The “non-cooperative” targets are illuminated with a scanning beam of electromagnetic radiation such as laser light incident from a first direction. A confocal detector of the electromagnetic radiation is placed at a first location for receiving reflected radiation which is substantially optically collinear with the incident beam of electromagnetic radiation. The system includes a spatial filter for attenuating background energy. The triangulation-based subsystem also includes a detector of electromagnetic radiation which is placed at a second location which is non-collinear with respect to the incident beam. This detector has a position sensitive axis. Digital data is derived from signals produced by the detectors. In this way, data from at least one triangulation-based channel is acquired in parallel or sequentially with at least one slice of confocal image data having substantially perfect temporal and spatial registration with the triangulation-based sensor data. This allows for fusion or further processing of the data for use with a predetermined measurement algorithm to thereby obtain information about the targets.

Claims (16)

1. A method for developing information about objects supported on a semiconductor wafer, at least some objects having a curved, specular surface and arranged in an array, the objects being interconnects supported on the wafer, the wafer being either patterned or featureless, the method comprising the steps of:

measuring the wafer at a plurality of locations to obtain reference data representative of height variations of the wafer, the step of measuring being carried out using at least one of a triangulation-based scanning sub-system and a confocal scanning sub-system, wherein the triangulation-based scanning sub-system includes a plurality of position sensitive detectors disposed on opposite sides of a plane of an incident scanning laser beam and non-collinear with the scanning laser beam, at least a portion of the incident scanning laser beam being non-normal to an object, the position sensitive detectors configured to receive specular reflected energy and scattered energy from the array of objects;

positioning the scanning laser beam relative to the wafer based, at least in part, on the reference data so that a waist of the laser beam coincides with an expected 3D location of the object so as to enhance contrast and obtain at least triangulation-based sensor data;

obtaining, with the triangulation-based scanning sub-system, a first set of data representing maximum specular reflections from the curved specular surfaces of the at least some objects in the array;

computing height estimate data for the objects in the array utilizing the first set of data;

analyzing the height estimate data to obtain an estimate of the height; and

obtaining additional information about the objects in the array using a confocal sensor system, wherein the confocal sensor system has a spatial filter and a confocal detector to produce at least one confocal slice of image data and to obtain at least one of confocal defect information and dimensional information of the objects, including an estimate of the diameter of one of the objects having the curved, specular surface.

2. The method of claim 1 , wherein the step of measuring is carried out at three or more non-collinear locations on the wafer, wherein the method further comprises forming a reference surface from the reference data and wherein the step of positioning is based, at least in part, on the reference surface.

3. A system for developing information about objects supported on a semiconductor wafer, at least some objects having a curved, specular surface and arranged in an array, the objects being interconnects supported on the wafer, the wafer being either patterned or featureless, the system comprising:

means for measuring the wafer at a plurality of locations to obtain reference data representative of height variations of the wafer, the means for measuring including at least one of a triangulation-based scanning sub-system and a confocal scanning sub-system wherein the triangulation-based scanning sub-system includes a plurality of position sensitive detectors disposed on opposite sides of a plane of an incident scanning laser beam and non-collinear with the scanning laser beam, at least a portion of the incident scanning laser beam being non-normal to an object, the position sensitive detectors configured to receive specular reflected energy and scattered energy from the array of objects;

means for positioning the scanning laser beam relative to the wafer based, at least in part, on the reference data so that a waist of the laser beam coincides with an expected 3D location of the object so as to enhance contrast and obtain at least triangulation-based sensor data;

means including a triangulation-based scanning sub-system for obtaining a first set of data representing maximum specular reflections from the curved specular surfaces of the at least some objects in the array;

means for computing height estimate data for the objects in the array utilizing the first set of data;

means for analyzing the height estimate data to obtain an estimate of the height; and

means including a confocal sensor system for obtaining additional information about the objects in the array wherein the confocal sensor system has a spatial filter and a confocal detector to produce at least one confocal slice of image data and to obtain at least one of confocal defect information and dimensional information of the objects, including an estimate of the diameter of one of the objects having the curved, specular surface.

4. The system of claim 3 , wherein the means for measuring measures the wafer at three or more non-collinear locations on the wafer, wherein the system further comprises means for forming a reference surface from the reference data and wherein the means for positioning positions the scanning laser beam based, at least in part, on the reference surface.

Assignments (4)
CORRECTIVE ASSIGNMENT TO CORRECT THE APPLICATION SERIAL NUMBER 11776904 PREVIOUSLY RECORDED ON REEL 030582 FRAME 0160. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded Dec 22, 2020
From: GSI GROUP CORPORATION; GSI GROUP INC.
To: ELECTRO SCIENTIFIC INDUSTRIES, INC.
Reel/Frame 056424/0287 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 10, 2013
From: GSI GROUP CORPORATION; GSI GROUP INC
To: ELECTRO SCIENTIFIC INDUSTRIES, INC.
Reel/Frame 030582/0160 →
RELEASE Recorded Oct 26, 2011
From: THE BANK OF NEW YORK MELLON TRUST COMPANY, N.A.
To: GSI GROUP INC.; GSI GROUP CORPORATION; MES INTERNATIONAL INC.; EXCEL TECHNOLOGY INC.; CAMBRIDGE TECHNOLOGY INC.; CONTINUUM ELECTRO-OPTICS INC.; CONTROL LASER CORPORATION (D/B/A BAUBLYS CONTROL LASER); THE OPTICAL CORPORATION; PHOTO RESEARCH INC.; QUANTRONIX CORPORATION; SYNRAD INC.; MICROE SYSTEMS CORP.
Reel/Frame 027127/0368 →
SECURITY AGREEMENT Recorded Jul 29, 2010
From: GSI GROUP INC.; GSI GROUP CORPORATION; MES INTERNATIONAL INC.; EXCEL TECHNOLOGY, INC.; CAMBRIDGE TECHNOLOGY, INC.; CONTINUUM ELECTRO-OPTICS, INC.; CONTROL LASER CORPORATION (D/B/A BAUBLYS CONTROL LASER); THE OPTICAL CORPORATION; PHOTO RESEARCH, INC.; QUANTRONIX CORPORATION; SYNRAD, INC.; MICROE SYSTEMS CORP.
To: THE BANK OF NEW YORK MELLON TRUST COMPANY, N.A., AS COLLATERAL AGENT
Reel/Frame 024755/0537 →