System for automated focus measuring of a lithography tool
View Patent ↗A system and method are used to calibrate a focus portion of an exposure section of a lithography tool. A wafer is exposed so that a resulted or formed patterned image is tilted with respect to the wafer. The tilting can be imposed based on controlling a wafer stage to tilt the wafer or a reticle stage to tilt the reticle. The wafer is developed. Characteristics of the tilted patterned image are measured with a portion of the lithography tool to determine focus parameters of an exposure system. The portion can be an alignment system. The measuring step can measure band width and/or band location of the tilted patterned image. Sometimes, more than one patterned image is formed on the wafer, then the measuring step can measure distance between bands and shifting of the bands with respect to a central axis of the wafer. The focus parameters can be focus tilt errors and/or focus offset. The focus parameters are used to perform calibration. Calibration is done by either automatically or manually entering compensation values for the measured focus parameters into the lithography tool.
1. A lithographic apparatus, comprising:
means for exposing a wafer so that a resultant patterned image is tilted with respect to the wafer;
a metrology system that performs an automated measurement of characteristics of the tilted patterned image to determine focus parameters of an exposure system; and
a calibration device that automatically calibrates the lithographic apparatus using the focus parameters from the automated measurement.
2. The lithographic apparatus of claim 1 , wherein the metrology system measures focus tilt errors of the exposure system.
3. The lithographic apparatus of claim 1 , wherein the metrology system measures focus offset of the exposure system.
4. The lithographic apparatus of claim 1 , wherein the metrology system measures a band location of the tilted patterned image.
5. The lithographic apparatus of claim 1 , further comprising:
a reticle stage that tilts a reticle to impose the tilt in the resultant patterned image.
6. The lithographic apparatus of claim 1 , further comprising:
a wafer stage that moves the wafer along a predetermined axis during an exposing operation to form at least one additional tilted patterned image on the wafer.
7. The lithographic apparatus of claim 6 , wherein the metrology system measures a distance between the tilted patterned images.
8. The lithographic apparatus of claim 6 , wherein the metrology system measures a distance of a center axis of the tilted patterned images from a center axis of the wafer.
9. A lithographic apparatus, comprising:
a means for exposing a wafer positioned at an angle so as to create a band-shaped etch pattern on the wafer that is tilted with respect to the wafer;
a wafer alignment system that measures characteristics of the patterned image and determines focus parameters; and
a calibrating device that calibrates a focus portion of an exposure section of a lithography apparatus based on the focus parameters.
10. The lithographic apparatus of claim 9 , wherein wafer alignment system determines focus tilt errors of the focus portion.
11. The lithographic apparatus of claim 9 , wherein wafer alignment system determines focus offset of the focus portion.
12. The lithographic apparatus of claim 9 , wherein wafer alignment system measures a band location of the tilted patterned image.
13. The lithographic apparatus of claim 9 , further comprising:
a reticle stage that tilts a reticle impose the tilt in the band-shaped etch pattern on the wafer.
14. The lithographic apparatus of claim 9 , further comprising:
a wafer stage that moves the wafer along a predetermined axis during an exposing operation to form at least one additional tilted patterned image on the wafer.
15. The lithographic apparatus of claim 14 , wherein the wafer alignment system measures a distance between the tilted patterned images.
16. The lithographic apparatus of claim 14 , wherein the wafer alignment system measures a distance of a center axis of the tilted patterned images from a center axis of the wafer.