Silicon-doped carbon dielectrics
View Patent ↗A silicone-doped carbon interlayer dielectric (ILD) and its method of formation are disclosed. The ILD's dielectric constant and/or its mechanical strength can be tailored by varying the ratio of carbon-to-silicon in the silicon-doped carbon matrix.
1. A structure comprising:
a plasma enhanced chemically vapor deposited silicon-doped carbon interlayer dielectric disposed over an etch stop layer;
wherein the silicon-doped carbon interlayer dielectric has a backbone consisting essentially of hydrocarbons and silicon, and the backbone includes silicon atoms bonded to methyl groups and substantially all of the silicon atoms are bridged to each other by way of chains of alkyl groups; and
wherein an atomic percent of silicon in the silicon-doped carbon material is less than 25 atomic percent.
2. The structure of claim 1 , wherein the atomic percent of silicon in the silicon-doped carbon interlayer dielectric is less than 15 atomic percent.
3. The structure of claim 2 wherein the silicon-doped carbon interlayer dielectric has a dielectric constant in the range of approximately 2.5-2.0.
4. The structure of claim 1 , wherein the atomic percent of the silicon-doped carbon interlayer dielectric is predominantly carbon.
5. The structure of claim 1 , further comprising a dual-damascene interconnect including a via portion and a trench portion formed within the silicon-doped carbon interlayer dielectric.
6. A structure comprising:
a plasma enhanced chemically vapor deposited silicon-doped carbon interlayer dielectric disposed over an etch stop layer;
wherein the silicon-doped carbon interlayer dielectric has a backbone consisting essentially of carbon bridges between silicon atoms, and the carbon bridges include fluorinated carbon moieties; and
wherein an atomic percent of silicon in the silicon-doped carbon material is less than 25 atomic percent.
7. The structure dielectric of claim 6 , wherein the atomic percent of silicon in the silicon-doped carbon interlayer dielectric is less than 15 atomic percent.
8. The structure of claim 6 , further comprising a dual-damascene interconnect including a via portion and a trench portion formed within the silicon-doped carbon interlayer dielectric.
9. The structure of claim 7 , wherein the fluorinated carbon moieties are perfluorinated carbon moieties.