Methods for making semiconductor structures having high-speed areas and high-density areas
View Patent ↗Methods for making a semiconductor structure are discussed. The methods include forming openings in a high-density area and a high-speed area, and forming a metallization layer simultaneously into the high-density area and the high-speed area. The metallization layer includes a combination of substances and compounds that reduce vertical resistance, reduce horizontal resistance, and inhibit cross-diffusion.
1. A circuitry module, comprising:
a plurality of dies, wherein at least one die includes a memory device;
a plurality of leads coupled to the plurality of dies to provide unilateral or bilateral communication and control, wherein the memory device includes first and second transistors in a periphery that are made from a method that includes:
forming from a nonconductive stack a first trench that superjacently abuts along a substantial length of a dual-doped polycrystalline silicon line of the first transistor having a p-type strip adjoining an n-type strip and a second trench that exposes a nonconductive layer of a gate structure of the second transistor, the nonconductive stack including a stopping layer that stops an etching process once etched away to define the bottom of the first and second trenches; and
filling the first and second trenches with conductive stacks to strap the dual-doped polycrystalline silicon line of the first transistor and to provide a conductive path overlying the gate structure of the second transistor, the first trench having a large cross-sectional area to decrease a horizontal resistance of the semiconductor device so as to increase the performance of the semiconductor device in the periphery.
2. A memory module, comprising:
a plurality of memory devices;
a plurality of command links coupled to the plurality of memory devices to communicate at least one command signal;
a plurality of data links coupled to the plurality of memory devices to communicate data, wherein at least one memory device of the plurality of memory devices includes first and second transistors in a periphery that are made from a method that includes:
forming from a nonconductive stack a first trench that superjacently abuts along a substantial length of a dual-doped polycrystalline silicon line of the first transistor having a p-type strip adjoining an n-type strip and a second trench that exposes a nonconductive layer of a gate structure of the second transistor, the nonconductive stack including a stopping layer that stops an etching process once etched away to define the bottom of the first and second trenches; and
filling the first and second trenches with conductive stacks to strap the dual-doped polycrystalline silicon line of the first transistor and to provide a conductive path overlying the gate structure of the second transistor, the first trench having a large cross-sectional area to decrease a horizontal resistance of the semiconductor device so as to increase the performance of the semiconductor device in the periphery.
3. An electronic system, comprising:
a plurality of circuit modules that includes a plurality of dies, wherein at least one die includes at least one memory device;
a plurality of leads coupled to the plurality of dies to provide unilateral or bilateral communication and control;
a user interface, wherein the at least one memory device includes first and second transistors in a periphery that are made from a method that includes:
forming from a nonconductive stack a first trench that superjacently abuts along a substantial length of a dual-doped polycrystalline silicon line of the first transistor having a p-type strip adjoining an n-type strip and a second trench that exposes a nonconductive layer of a gate structure of the second transistor, the nonconductive stack including a stopping layer that stops an etching process once etched away to define the bottom of the first and second trenches; and
filling the first and second trenches with conductive stacks to strap the dual-doped polycrystalline silicon line of the first transistor and to provide a conductive path overlying the gate structure of the second transistor, the first trench having a large cross-sectional area to decrease a horizontal resistance of the semiconductor device so as to increase the performance of the semiconductor device in the periphery.
4. A memory system, comprising:
a plurality of memory modules that includes a plurality of memory devices;
a plurality of command links coupled to the plurality of memory devices to communicate at least one command signal;
a plurality of data links coupled to the plurality of memory devices to communicate data;
a memory controller, wherein one of the memory device includes first and second transistors in a periphery that are made from a method that includes:
forming from a nonconductive stack a first trench that superjacently abuts along a substantial length of a dual-doped polycrystalline silicon line of the first transistor having a p-type strip adjoining an n-type strip and a second trench that exposes a nonconductive layer of a gate structure of the second transistor, the nonconductive stack including a stopping layer that stops an etching process once etched away to define the bottom of the first and second trenches; and
filling the first and second trenches with conductive stacks to strap the dual-doped polycrystalline silicon line of the first transistor and to provide a conductive path overlying the gate structure of the second transistor, the first trench having a large cross-sectional area to decrease a horizontal resistance of the semiconductor device so as to increase the performance of the semiconductor device in the periphery.
5. A computer system, comprising:
a processor;
a memory system that comprises a plurality of memory modules, one of the plurality of the memory modules comprises a plurality of memory devices;
a plurality of command links coupled to the plurality of memory devices to communicate at least one command signal;
a plurality of data links coupled to the plurality of memory devices to communicate data;
a memory controller;
at least one user interface device, wherein the at least one user interface device includes a monitor;
at least one output device, wherein the at least one output device includes a printer;
at least one bulk storage device, wherein at least one memory device of the plurality of memory devices includes first and second transistors in a periphery that are made from a method that includes:
forming from a nonconductive stack a first trench that superjacently abuts along a substantial length of a dual-doped polycrystalline silicon line of the first transistor having a p-type strip adjoining an n-type strip and a second trench that exposes a nonconductive layer of a gate structure of the second transistor, the nonconductive stack including a stopping layer that stops an etching process once etched away to define the bottom of the first and second trenches; and
filling the first and second trenches with conductive stacks to strap the dual-doped polycrystalline silicon line of the first transistor and to provide a conductive path overlying the gate structure of the second transistor, the first trench having a large cross-sectional area to decrease a horizontal resistance of the semiconductor device so as to increase the performance of the semiconductor device in the periphery.