Processing method for protection of backside of a wafer
A temporal protection layer is employed to a wafer backside for use of micro-electro-mechanical systems (MEMS). The formation of the temporal protection layer prevents the wafer backside from scratch in process of transferring system for IC manufacturers. With regard to low cost and easy forming and removing, an oxide layer is used as the temporal protection layer. The throughput and yield rate of the wafer production are improved by the use of the temporal protection layer.
1. A processing method for protection of a backside of a wafer in process of a transferring system; comprising:
providing said wafer having a topside and said backside opposite thereto, wherein said wafer comprises a semiconductor device region near said topside and said semiconductor device region comprises a IC device region, a dielectric layer and a plurality of conductive structures;
forming a first barrier layer on said backside, wherein said first barrier layer be used as a mask for following process; and
forming a first protective layer on and adjacent to said barrier layer of said backside.
2. The processing method according to claim 1 , wherein said step of forming said first barrier layer comprises depositing a low-stress nitride layer.
3. The processing method according to claim 1 , wherein said step of forming said first protective layer comprises depositing an oxide layer.
4. The processing method according to claim 1 , wherein said step of forming said barrier layer farther deposits a second barrier layer over said semiconductor device region and said topside.
5. The processing method according to claim 4 , wherein said step of forming said first protective layer further deposits a second protective layer over said second barrier layer.
6. A processing method for a backside of a silicon wafer for use of micro-electro-mechanical systems (MEMS), comprising:
providing said silicon wafer having a topside and said backside opposite thereto, wherein said silicon wafer comprises a semiconductor device region near said topside and said semiconductor device region comprises a IC device region, a dielectric layer and a plurality of conductive structures;
depositing two silicon nitride layers on said backside and said topside, respectively, wherein said silicon nitride layers be used as a mask for following process; and
depositing an oxide layer on and adjacent to said silicon nitride layer of said backside, whereby protecting said silicon nitride layer of said backside from scratch in process of a transferring system.
7. The processing method according to claim 6 , wherein a thickness of said oxide layer on said backside is in the range of 5000 to 10000 Angstroms.
8. The processing method according to claim 6 , wherein said step of depositing on said backside is a low-stress silicon nitride layer.
9. The processing method according to claim 6 , wherein said oxide layer is formed by a plasma enhanced chemical vapor deposition (PECVD) process.