Non-volatile semiconductor device and method for automatically recovering erase failure in the device
View Patent ↗A spare sector is in a blank state beforehand. Each time the erasing is carried out in practical use, the number of erase pulses is counted or the presence/absence of overcurrent flowing when the erase pulse is being applied is monitored. A regular sector having long-erase failure thus detected is automatically replaced with a spare sector. In this manner, the long-erase failure can be recovered without erasing the spare sector after automatic redundancy with the spare sector.
1. A semiconductor device comprising:
electrically erasable/programmable regular sectors;
at least one electrically erasable/programmable spare sector for the regular sectors;
a decoder selecting one of the regular sectors in response to an erase command;
a monitor circuit monitoring an erase performance of a selected regular sector during erasing; and
a control circuit automatically selecting the spare sector for the selected regular sector when the selected regular sector has a degraded erase performance,
the spare sector being initially in an erased state prior to selecting by the control circuit.
2. The semiconductor device as claimed in claim 1 , wherein the control circuit automatically selects the spare sector when the erase performance of the selected regular sector shows that erasing thereof is incomplete within a given period of time.
3. The semiconductor device as claimed in claim 1 , wherein the monitor circuit comprises a pulse counter that counts pulses for erasing, and monitors the erase performance of the selected regular sector on the basis of a number of pulses counted.
4. The semiconductor device as claimed in claim 3 , wherein the control circuit verifies erasing and automatically selects the spare sector when verification of erasing still fails at a given number of pulses counted.
5. The semiconductor device as claimed in claim 1 , wherein the monitor circuit comprises a current detector that detects a leakage current flowing in the selected regular sector during erasing.
6. The semiconductor device as claimed in claim 5 , wherein the control circuit automatically selects the spare sector when the leakage current reaches a given amount of current during erasing.
7. The semiconductor device as claimed in claim 5 , wherein the leakage current is a current flowing between a word line and a well of the selected regular sector during erasing.
8. The semiconductor device as claimed in claim 1 , wherein the control circuit comprises a content addressable memory (CAM) storing an address of the selected regular sector that has the degraded erase performance.
9. The semiconductor device as claimed in claim 1 , wherein the control circuit comprises:
a content addressable memory (CAM) storing an address of the selected regular sector that has the degraded erase performance; and
an address compare circuit that compares an address indicated by the erase command with the address stored in the CAM and causes the decoder to select the spare sector when the address indicated by the erase command coincides with the address in the CAM.
10. The semiconductor device as claimed in claim 1 , wherein the control circuit verifies erasing of the selected regular sector and generates a signal that sets the selected regular sector in a programmable state when verification passes.
11. The semiconductor device as claimed in claim 1 , wherein the control circuit continues to verify erasing of the selected regular sector until a predetermined maximum number of pulses for erasing is applied thereto if the control circuit fails to automatically select the spare sector.
12. The semiconductor device as claimed in claim 1 , wherein the spare sector has a configuration identical to that of the regular sectors.
13. The semiconductor device as claimed in claim 8 , wherein the CAM includes a non-volatile memory cell that stores the address of the selected regular sector.
14. A redundant method for a non-volatile semiconductor memory comprising the steps of:
erasing data stored in a regular sector selected by an erase command;
monitoring an erase performance of a selected regular sector; and
selecting a spare sector for the selected regular sector when the selected regular sector has a degraded erase performance,
the spare sector being initially in an erased state prior to the step of selecting.
15. The redundant method as claimed in claim 14 , wherein the step of selecting selects the spare sector when the erase performance of the selected regular sector shows that erasing thereof is incomplete within a given period of time.
16. The redundant method as claimed in claim 14 , wherein the step of monitoring comprises a step of counting pulses for erasing in order to monitor the erase performance of the selected regular sector on the basis of a number of pulses counted.
17. The redundant method as claimed in claim 14 , wherein the step of monitoring comprises a step of detecting a leakage current flowing in the selected regular sector during erasing.
18. The redundant method as claimed in claim 14 , wherein the step of monitoring comprises a step of detecting a leakage current flowing between a word line and a well of the selected sector during erasing.
19. The redundant method as claimed in claim 14 , further comprising a step of storing an address of the selected regular sector that has the degraded erase performance.
20. The redundant method as claimed in claim 14 , further comprising the steps of:
storing an address of the selected regular sector that has the degraded erase performance; and
comparing an address indicated by the erase command with the address stored and selecting the spare sector when the address indicated by the erase command coincides with the address stored.