Electrostatic discharge protection device
View Patent ↗An electrostatic discharge (ESD) protection device includes a first-type substrate, a second-type well formed in the substrate and a first-type well formed in the substrate. The second-type well includes a second-type+ region formed between first and second first-type+ regions. The first-type well is formed in the substrate adjacent a first side of the second-type well. The first-type well includes first and second first-type regions with a first-type+ region and a second-type+ region formed between the first and second first-type regions. The second-type+ region of the first-type well is formed between the first-type+ region of the first-type well and the second-type well.
1. An electrostatic discharge (ESD) protection device, comprising:
a first-type substrate;
a second-type well formed in the substrate, wherein the second-type well includes a second-type+ region formed between a first and second first-type+ region; and
a first first-type well formed in the substrate adjacent a first side of the second-type well, wherein the first first-type well includes a first first-type region and a second first-type region with a first-type+ region and a second-type+ region formed between the first and second first-type regions, and wherein the second-type+ region of the first first-type well is formed between the first-type+ region of the first first-type well and the second-type well.
2. The device of claim 1 , wherein the second-type well and the first first-type well are one of abutted, overlapped and spaced apart from one another.
3. The device of claim 1 , further comprising:
a second first-type well formed in the substrate adjacent a second side of the second-type well, wherein the second first-type well includes a first and second first-type region with a first-type+ region and a second-type+ region formed between the first and second first-type regions, and wherein the second-type+ region of the second first-type well is formed between the first-type+ region of the second first-type well and the second-type well.
4. The device of claim 1 , wherein the device is a Shockley diode.
5. The device of claim 1 , wherein the first-type is a P-type and the second-type is an N-type.
6. An electrostatic discharge (ESD) protection device, comprising:
a P-type substrate;
an N-type well formed in the substrate, wherein the N-type well includes an N+ region formed between a first P+ region and a second P+ region; and
a first P-type well formed in the substrate adjacent a first side of the N-type well, wherein the first P-type well includes a first P-type region and a second P-type region with a P+ region and an N+ region formed between the first and second P-type regions, and wherein the N+ region of the first P-type well is formed between the P+ region of the first P-type well and the N-type well.
7. The device of claim 6 , wherein the N-type well and the first P-type well are one of abutted, overlapped and spaced apart from one another.
8. The device of claim 6 , further comprising:
a second P-type well formed in the substrate adjacent a second side of the N-type well, wherein the second P-type well includes a first P-type region and a second P-type region with a P+ region and an N+ region formed between the first and second P-type regions, and wherein the N+ region of the second P-type well is formed between the P+ region of the second P-type well and the N-type well.
9. The device of claim 6 , wherein the device functions as a Shockley diode.
10. An electrostatic discharge (ESD) protection device, comprising:
a first-type substrate;
a second-type well formed in the substrate, wherein the second-type well includes a second-type+ region formed between a first and second first-type+ region;
a first first-type well formed in the substrate adjacent a first side of the second-type well, wherein the first first-type well includes a first first-type region and a second first-type region with a first-type+ region and a second-type+ region formed between the first and second first-type regions, and wherein the second-type+ region of the first first-type well is formed between the first-type+ region of the first first-type well and the second-type well; and
a second first-type well formed in the substrate adjacent a second side of the second-type well, wherein the second first-type well includes a first and second first-type region with a first-type+ region and a second-type+ region formed between the first and second first-type regions, and wherein the second-type+ region of the second first-type well is formed between the first-type+ region of the second first-type well and the second-type well.
11. The device of claim 10 , wherein the second-type well and the first first-type well are one of abutted, overlapped and spaced apart from one another.
12. The device of claim 10 , wherein the second-type well and the second first-type well are one of abutted, overlapped and spaced apart from one another.
13. The device of claim 10 , wherein the device is a Shockley diode.
14. The device of claim 10 , wherein the first-type is a P-type and the second-type is an N-type.