Organic light-emitting devices using spin-dependent processes
The maximum luminous efficiency of organic light-emitting materials is increased through spin-dependent processing. The technique is applicable to all electro-luminescent processes in which light is produced by singlet exciton decay, and all devices which use such effects, including LEDs, super-radiant devices, amplified stimulated emission devices, lasers, other optical microcavity devices, electrically pumped optical amplifiers, and phosphorescence (Ph) based light emitting devices. In preferred embodiments, the emissive material is doped with an impurity, or otherwise modified, to increase the spin-lattice relaxation rate (i.e., decrease the spin-lattice time), and hence raise the efficiency of the device. The material may be a polymer, oligomer, small molecule, single crystal, molecular crystal, or fullerene. The impurity is preferably a magnetic or paramagnetic substance. The invention is applicable to IR, UV, and other electromagnetic radiation generation and is thus not limited to the visible region of the spectrum. The methods of the invention may also be combined with other techniques used to improve device performance.
1. A light-emitting device, comprising:
a luminescent material having current carriers with a spin flip rate, an emissive singlet recombination channel, and a non-emissive triplet recombination channel, and wherein the singlet recombination cross section is greater than the triplet recombination cross section; and
a magnetically active ion, radical, or molecule dopant added to the luminescent material to increase the spin flip rate of the current carriers, wherein the dopant is in the form of a microparticle, microrod, nanoparticle, metal complex of a transition metal, a doped glass, or a ceramic.
2. The light-emitting device of claim 1 , wherein the material is a polymer.
3. The light-emitting device of claim 1 , wherein the dopant facilitates low-frequency vibrations.
4. The light-emitting device of claim 1 , comprising a polymer partially substituted with a ferrocene-containing side chain.
5. The light-emitting device of claim 1 , wherein said magnetically active dopant is a metal complex of iron, manganese or cobalt.
6. A light-emitting device, comprising:
an organic light-emitting material having carriers which exhibit a spin-lattice relaxation rate, an emissive singlet recombination channel, and a non-emissive triplet recombination channel, and wherein the singlet recombination cross-section is greater than the triplet recombination cross-section; and
an ion, radical, or molecule dopant added to the material so as to increase the spin-lattice relaxation rate of the carriers, wherein the dopant is in the form of a microparticle, microrod, nanoparticle, metal complex of a transition metal, a doped glass, or a ceramic.
7. The light-emitting device of claim 6 , wherein the material is a polymer.
8. The light-emitting device of claim 6 , wherein the dopant is magnetically active.
9. The light-emitting device of claim 6 , wherein the dopant facilitates low-frequency vibrations.
10. The light-emitting device of claim 6 , comprising a polymer partially substituted with a ferrocene-containing side chain.
11. The light-emitting device of claim 6 , wherein said dopant is a metal complex of iron, manganese or cobalt.
12. A high-efficiency light-emitting device, comprising:
a singlet emissive electro-luminescent compound in which useful light emission occurs only through the recombination of singlet excitons and having a singlet-triplet cross-section ratio of greater than one; and
an ion, radical, or molecule dopant, added to the compound so as to increase the spin flip rate of carriers propagating through the material, wherein the dopant is in the form of a microparticle, microrod, nanoparticle, metal complex of a transition metal, a doped glass, or a ceramic.
13. An electro-luminescent device, comprising:
a first electrode;
a singlet emissive electro-luminescent layer supporting the flow of current carriers having a spin-flip rate and having a singlet-triplet cross-section ratio of greater than one;
a second electrode; and
an organic electro-luminescent material and an ion, radical, or molecule dopant added to the electro-luminescent layer so as to increase the spin flip rate of the current carriers, wherein the dopant is in the form of a microparticle, microrod, nanoparticle, metal complex of a transition metal, a doped glass, or a ceramic.