Method of manufacturing semiconductor device
The method includes forming an isolation film on a silicon substrate to define an active region; forming an antireflective film on an entire surface of the substrate containing the isolation film; forming a photosensitive film pattern on the antireflective film while exposing a portion of the isolation film or the active region adjacent to the isolation film; etching the antireflective film, the isolation film, and the substrate by using the photosensitive film pattern as an etching mask to recess the active region; performing a light etch treatment on a substrate resultant without removing the remaining photosensitive film pattern, so as to remove a damaged layer and a carbon pollutant formed on a surface of the recessed active region; and removing the remaining photosensitive film pattern and the antireflective film.
1. A method of manufacturing a semiconductor device to form a STAR (step-gated asymmetry recess) cell, comprising the steps of:
forming an isolation film on a silicon substrate to define an active region;
forming an antireflective film on an entire surface of the substrate containing the isolation film;
forming a photosensitive film pattern on the antireflective film while exposing a portion of the isolation film or the active region adjacent to the isolation film;
etching the antireflective film, the isolation film, and the substrate by using the photosensitive film pattern as an etching mask to form a recess in the active region;
performing a light etch treatment on a substrate resultant without removing the remaining photosensitive film pattern, so as to remove a damaged layer and a carbon pollutant formed on a surface of the recessed active region; and
removing the remaining photosensitive film pattern and the antireflective film,
wherein the light etch treatment is performed by utilizing a gas not containing a carbon source,
wherein the light etch treatment is performed by utilizing a gas of SF 6 , NF 3 , Cl 2 and HBr as a main etching gas.
2. A method of manufacturing a semiconductor device to form a STAR (step-gated asymmetry recess) cell, comprising the steps of:
forming an isolation film on a silicon substrate to define an active region;
forming an antireflective film on an entire surface of the substrate containing the isolation film;
forming a photosensitive film pattern on the antireflective film while exposing a portion of the isolation film or the active region adjacent to the isolation film;
etching the antireflective film, the isolation film, and the substrate by using the photosensitive film pattern as an etching mask to form a recess in the active region;
performing a light etch treatment on a substrate resultant without removing the remaining photosensitive film pattern, so as to remove a damaged layer and a carbon pollutant formed on a surface of the recessed active region; and
removing the remaining photosensitive film pattern and the antireflective film,
wherein the light etch treatment is performed by utilizing a gas not containing a carbon source,
wherein the light etch treatment is performed by utilizing CF 4 as a main etching gas and any one of O 2 , Ar, N 2 and H 2 as a dilute gas, while applying a low power lower than 100 W.
3. The method of claim 2 , wherein the dilute gas consists essentially of O 2 or Ar.
4. The method of claim 2 , wherein the dilute gas includes O 2 and Ar.
5. The method of claim 2 , wherein the dilute gas includes N 2 and H 2 .
6. A method of manufacturing a semiconductor device, the method comprising:
forming an isolation structure over a semiconductor substrate to define an active region on the substrate;
forming an antireflective film over the isolation structure and the active region;
forming a photosensitive film pattern over the antireflective film exposing a first portion of the antireflective film directly overlying a second portion of the isolation film and a third portion of the active region adjacent to the isolation structure;
etching the exposed first portion of the antireflective film to expose the second portion of the isolation structure and the third portion of the active region;
etching the exposed second portion of the isolation structure and the exposed third portion of the active region to form a recess having a step defined by the etching of the first portion of the isolations structure and the second portion of the active region;
performing a light etch treatment on the substrate including the recess without removing the photosensitive film pattern, so as to remove a damaged layer and a carbon pollutant formed on a surface of the etched second portion of the active region; and
thereafter, removing the photosensitive film pattern and the antireflective film.
7. The method of claim 6 , wherein the recess having a step defining a step-gated asymmetry recess.
8. The method of claim 7 , wherein the light etch treatment is performed by utilizing a gas not containing a carbon source.
9. The method of claim 7 , wherein the light etch treatment is performed by utilizing a main etching gas including CF 4 and a dilute gate including at least one selected from the group consisting of O 2 , Ar, N 2 , H 2 , and a combination thereof.
10. The method of claim 9 , wherein the light etch treatment is performed by applying a power of no more than 100 W.
11. The method of claim 7 , wherein the light etching treatment is performed by utilizing a gas of SF 6 , NF 3 , Cl 2 and HBr as a main etch gas.
12. The method of claim 7 , wherein the etching-the-exposed-first-portion step, the etching-of-the-second-portion step, and the performing-a-light-etch-treatment step are all performed in-situ.