Granted Patent B2

US 7,282,766 · App. 11/123,145 · Granted Oct 16, 2007

Abstract

Claims (32)

1. A semiconductor device comprising:

a support substrate having an insulating surface;

a fin-type semiconductor region of a first conductivity type formed on said support substrate, said fin-type semiconductor region having a pair of side walls generally vertical to a surface of said support substrate and an upper surface coupling said side walls;

an insulated gate electrode structure formed traversing an intermediate portion of said fin-type semiconductor region and including a gate insulating film and a conductive gate electrode formed on said gate insulating film, said gate electrode having side walls in conformity with the side walls of said fin-type semiconductor region;

source/drain regions of a second conductivity type opposite to said first conductivity type, formed in said fin-type semiconductor region on both sides of said conductive gate electrode;

side wall insulating films including a first side wall insulating film formed on the side walls of said conductive gate electrode and a second side wall insulating film formed on the side walls of said fin-type semiconductor region and having an opening on each of said source/drain regions, extending from an upper edge to a lower edge of each of the side walls of said fin-type semiconductor region;

a silicide layer formed on a surface of each of said source/drain regions exposed in the opening of said second side wall insulating film; and

source/drain electrodes contacting said silicide layer.

2. The semiconductor device according to claim 1 , wherein said source/drain regions are formed in the side walls and upper surface of said fin-type semiconductor region and said silicide layer is formed on the side walls and upper surface of said fin-type semiconductor region.

3. The semiconductor device according to claim 1 , further comprising:

an insulating protective film formed on the upper surface of said fin-type semiconductor region;

wherein said gate insulating film is formed on the side walls of said fin-type semiconductor region, and said silicide layer is formed on the side walls of said fin-type semiconductor region.

4. The semiconductor device according to claim 1 , further comprising:

an interlayer insulating film burying said fin-type semiconductor region and said insulating gate structure and having contact holes exposing the opening or openings of said second side wall insulating film;

wherein said silicide layer is formed in said contact holes.

5. The semiconductor device according to claim 4 , wherein said source/drain electrodes are formed burying said contact holes.

6. A semiconductor device comprising:

a support substrate having an insulating surface;

a fin-type semiconductor region of a first conductivity type formed on said support substrate, said fin-type semiconductor region having a pair of side walls having a first height and being generally vertical to a surface of said support substrate and an upper surface coupling said side walls;

an insulated gate electrode structure formed traversing an intermediate portion of said fin-type semiconductor region and including a gate insulating film and a conductive gate electrode formed on said gate insulating film, said gate electrode having side walls having a second height higher than said first height;

source/drain regions of a second conductivity type opposite to said first conductivity type, formed in said fin-type semiconductor region on both sides of said insulated gate electrode structure;

side wall insulating films not formed on the upper surface and the side walls of said fin-type semiconductor region but formed on lower portions of the side walls of said gate electrode near said fin-type semiconductor region, said side wall insulating films surrounding the upper surface and the side walls of said fin-type semiconductor region;

a silicide layer formed at least on each of the side walls, from upper edges to lower edges thereof, of a portion of said fin-type semiconductor region protruding from said side wall insulating films; and

source/drain electrodes contacting said silicide layer on the side walls of said fin-type semiconductor region.

7. The semiconductor device according to claim 6 , wherein said source/drain regions are formed in surface layers in the upper surface and the side walls of said fin-type semiconductor region, and said silicide layer are formed on the upper surface and the side walls of said fin-type semiconductor region.

8. The semiconductor device according to claim 6 , further comprising:

an insulating protective film formed on the upper surface of said fin-type semiconductor region;

wherein said gate insulating film is formed on the side walls of said fin-type semiconductor region and said silicide layer are formed on the side walls of said fin-type semiconductor region.

9. The semiconductor device according to claim 6 , further comprising:

an interlayer insulating film burying said fin-type semiconductor region and said insulated gate electrode structure and formed with contact holes exposing said silicide layers on the side walls of said fin-type semiconductor region;

wherein said source/drain electrodes contact said silicide layer on the side walls of said fin-type semiconductor region in said contact holes.

10. The semiconductor device according to claim 6 , wherein said insulating surface of said support substrate is a silicon nitride surface or a silicon oxynitride surface.

Assignments (9)