Surface-plasmon index guided (SPIG) waveguides and surface-plasmon effective index guided (SPEIG) waveguides
A new class of surface plasmon waveguides is presented. The basis of these structures is the presence of surface plasmon modes, supported on the interfaces between the dielectric regions and the flat unpatterned surface of a bulk metallic substrate. The waveguides discussed here are promising to have significant applications in the field of nanophotonics by being able to simultaneously shrink length, time and energy scales, allowing for easy coupling over their entire bandwidth of operation, and exhibiting minimal absorption losses limited only by the intrinsic loss of the metallic substrate. These principles can be used for many frequency regimes (from GHz and lower, all the way to optical).
1. An apparatus comprising:
a flat unpatterned substrate of plasmonic material; and
a distribution of different dielectric regions disposed on top of said flat unpatterned substrate of plasmonic material forming a waveguide and a plurality of guided surface plasmon modes existing for a specific frequency regime, said surface plasmon modes supported on an interface between said substrate and said different dielectric regions,
wherein said plasmonic material and said surface plasmon modes existent in said different dielectric regions have different dispersion relations allowing frequency bands in which surface plasmon in a central waveguiding region within said different dielectric region, due to its large wavevector, couples only to evanescent surface plasmon modes in regions outside said waveguiding region, and is thereby being guided.
2. An apparatus as per claim 1 , wherein lowering temperature of said flat unpatterned substrate limits absorption losses to intrinsic losses.
3. An apparatus as per claim 2 , wherein said absorption losses are limited to the range of α<1, 10, 10 2 , 10 3 , 10 4 dB/cm.
4. An apparatus as per claim 1 , wherein said plasmonic material is any of the following: metal, polaritonic material, or highly doped semiconductor.
5. An apparatus as per claim 1 , wherein said frequency regime is any of the following: GHz, THz, infrared, or optical.
6. An apparatus as per claim 1 , wherein said dielectric region includes layered dielectric structures.
7. An apparatus as per claim 6 , wherein said layered dielectric structures comprises a plurality of layers parallel to said plasmonic material.
8. An apparatus as per claim 7 , where dimensions and indices of refraction of the layered structure are chosen to support at least one frequency regime of negative group velocity.
9. An apparatus as per claim 7 , where dimensions and indices of refraction of the layered structure are chosen to support at least one frequency point of zero group velocity at non-zero wavevector.
10. An apparatus as per claim 7 , where the dimensions and indices of refraction of the layered structure are chosen to support regimes of low absolute value of the positive or negative group velocity and large wavevectors over large frequency bandwidths.
11. An apparatus as per claim 10 , wherein said large frequency bandwidth is defined by Δω/ω>0.01, 0.05, 0.1, 0.2, 0.5, said low group velocity is defined by |v G /c|<0.1, 0.01, 0.001, and said large wavevector is defined by k*λ AIR /(2π)>2, 5, 10, 25.
12. An apparatus comprising:
a flat unpatterned substrate of plasmonic material; and
a distribution of different dielectric regions disposed on top of said flat unpatterned substrate of plasmonic material forming a waveguide, and a plurality of guided surface plasmon modes existing for a specific frequency regime, said surface plasmon modes supported on an interface between said substrate and said different dielectric regions,
wherein surface plasmon modes existent in said different dielectric regions have different frequency cutoffs allowing frequency bands in which a surface plasmon in a central waveguiding region within said different dielectric regions has frequency which is above the frequency cutoff for the surface plasmon modes in regions outside said central waveguiding region, whereby the surface plasmon in the central waveguiding region has no surface plasmons outside said central waveguiding region to which it can couple to, and is thereby being guided.
13. An apparatus as per claim 12 , wherein lowering temperature of said flat unpatterned substrate limits absorption losses to intrinsic losses.
14. An apparatus as per claim 13 , wherein said absorption losses are limited to the range of α<1, 10, 10 2 , 10 3 , 10 4 dB/cm.
15. An apparatus as per claim 12 , wherein said plasmonic material is any of the following: metal, polaritonic material, or highly doped semiconductor.
16. An apparatus as per claim 12 , wherein said frequency regime is any of the following: GHz, THz, infrared, or optical.
17. An apparatus as per claim 12 , wherein said dielectric region includes layered dielectric structures.
18. An apparatus as per claim 17 , wherein said layered dielectric structures comprises a plurality of layers parallel to said plasmonic material.
19. An apparatus as per claim 17 , where dimensions and indices of refraction of the layered structure are chosen to support at least one frequency regime of negative group velocity.
20. An apparatus as per claim 17 , where dimensions and indices of refraction of the layered structure are chosen to support at least one frequency point of zero group velocity at non-zero wavevector.
21. An apparatus as per claim 17 , where the dimensions and indices of refraction of the layered structure are chosen to support regimes of low absolute value of the positive or negative group velocity and large wavevectors over large frequency bandwidths.
22. An apparatus as per claim 21 , wherein said large frequency bandwidth is defined by Δω/ω>0.01, 0.05, 0.1, 0.2, 0.5, said low group velocity is defined by |v G /c|<0.1, 0.01, 0.001, and said large wavevector is defined by k*λ AIR /(2π)>2, 5, 10, 25.