IP Library Granted Patent US 7,413,912
Granted Patent B2
US 7,413,912 · App. 11/126,459 · Granted Aug 19, 2008

Microsensor with ferroelectric material and method for fabricating the same

Assignee: Instrument Technology Research Center, National Applied Research Laboratories
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Quick Facts
Patent No.
US 7,413,912
App. No.
11/126,459
Granted
Aug 19, 2008
Kind
B2
Abstract

A microsensor fabricated with a ferroelectric material and a fabrication method therefor are provided. The microsensor includes a support, an insulating layer on the support, a first electrode on the insulating layer, a ferroelectric layer having at least a metal on the insulating layer and the first electrode, and at least a second electrode on the ferroelectric layer.

Claims (18)

1. A method for fabricating a microsensor, comprising steps of:

(a) providing a substrate;

(b) forming an insulating layer on said substrate;

(c) forming a first electrode on said insulating layer;

(d) forming a ferroelectric layer on said first electrode and said insulating layer;

(e) providing at least a metal in said ferroelectric layer via one of a microwave post-treatment and an excimer laser annealing treatment; and

(f) forming at least a second electrode on said ferroelectric layer.

2. The method according to claim 1 , further comprising a step (g) of:

transforming said substrate into a support.

3. The method according to claim 1 , wherein each of the microwave post-treatment and the excimer laser annealing treatment is a heat treatment.

4. The method according to claim 1 , further comprising a step (f1) of:

forming a passivation layer on said ferroelectric layer.

5. The method according to claim 1 , wherein said substrate comprises a silicon.

6. The method according to claim 1 , wherein said insulating layer comprises one of a silicon oxide and a silicon nitride.

7. The method according to claim 1 , wherein said first electrode and said second electrode comprise one of an electrically conductive ceramic material and a metal with a relatively high melting-point.

8. The method according to claim 7 , wherein said metal with said relatively high melting-point is a platinum.

9. The method according to claim 1 , wherein said ferroelectric layer is a polycrystalline barium strontium titanate (BST) layer.

10. The method according to claim 1 , wherein said metal comprises one of a chromium and a manganese.

Assignments (2)
CHANGE OF NAME Recorded Sep 5, 2014
From: INSTRUMENT TECHNOLOGY RESEARCH CENTER, NATIONAL APPLIED RESEARCH LABORATORIES
To: NATIONAL APPLIED RESEARCH LABORATORIES
Reel/Frame 033674/0497 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 11, 2005
From: CHEN, JYH-SHIN; SHYE, DER-CHI; KUO, MENG-WEI; SHIAO, MING-HUA; KAO, JIANN-SHIUM; CHENG, HUANG-CHUNG; CHIOU, BI-SHIOU
To: INSTRUMENT TECHNOLOGY RESEARCH CENTER, NATIONAL APPLIED RESEARCH LABORATORIES
Reel/Frame 016559/0231 →
Continuity (1)
Related Publication 20060258040A1 · Nov 16, 2006