Resistive memory device with improved data retention and reduced power
Provided herein is method of programming a resistive memory device, the resistive memory device including a first electrode, a second electrode, a passive layer between the first and second electrode, and an active layer between the first and second electrodes. In the programming method, an electrical potential is applied across the first and second electrodes from higher to lower potential in the direction from the active layer to the passive layer so that electronic charge carriers enter the active layer and are held by traps therein. In erasing the memory device, an electrical potential is applied across the first and second electrodes from higher to lower potential in the direction from the passive layer to the active layer so that electronic charge carriers are moved from the active layer.
1 . A method of changing the state of a memory device comprising first and second electrodes and an undoped active layer between the first and second electrodes, the method comprising moving electronic charge carriers into the active layer.
2 . The method of claim 1 and further comprising the step of limiting current through the memory device while changing the state of the memory device.
3 . The method of claim 1 wherein the active layer is copper oxide.
4 . The method of claim 1 and further comprising a passive layer between the first and second electrodes.
5 . The method of claim 1 wherein the electronic charge carriers are moved into traps within the active layer.
6 . The method of claim 1 wherein the memory device is changed from a higher resistance state to a lower resistance state.
7 . A method of changing the state of a memory device comprising first and second electrodes and an undoped active layer between the first and second electrodes, the method comprising moving electronic charge carriers from the active layer.
8 . The method of claim 7 and further comprising the step of limiting current through the memory device while changing the state of the memory device.
9 . The method of claim 7 wherein the active layer is copper oxide.
10 . The method of claim 7 and further comprising a passive layer between the first and second electrodes.
11 . The method of claim 7 wherein the electronic charge carriers are moved from traps within the active layer.
12 . The method of claim 7 wherein the memory device is changed from a lower resistance state to a higher resistance state.
13 . A method of changing the state of a memory device from a higher resistance state to a lower resistance state, the memory device comprising a first electrode, a second electrode, a passive layer between the first and second electrodes, and an active layer between the first and second electrodes, the method comprising moving electronic charge carriers into the active layer.
14 . The method of claim 13 wherein the electronic charge carriers move into traps within the active layer.
15 . The method of claim 13 and further comprising the step of limiting current through the memory device while changing the state of the memory device.
16 . The method of claim 13 wherein the passive layer is on and in contact with the first electrode, the active layer is on and in contact with the passive layer, and the second electrode is on and in contact with the active layer.
17 . A method of changing the state of a memory device from a lower resistance state to a higher resistance state, the memory device comprising a first electrode, a second electrode, a passive layer between the first and second electrodes, and an active layer between the first and second electrodes, the method comprising moving electronic charge carriers from the active layer.
18 . The method of claim 17 wherein the electronic charge carriers move from traps within the active layer.
19 . The method of claim 17 and further comprising the step of limiting current through the memory device while changing the state of the memory device.
20 . The method of claim 17 wherein the passive layer is on and in contact with the first electrode, the active layer is on and in contact with the passive layer, and the second electrode is on and in contact with the active layer.
21 . A method of changing the state of a memory device comprising first and second electrodes and an active layer between the first and second electrodes, the method comprising selecting a level of current limit through the memory device, and applying an electrical potential across the first and second electrodes.
22 . The method of claim 21 and further comprising the step of limiting current through the memory device to the selected level.
23 . The method of claim 22 wherein the memory device is changed from a higher resistance state to a lower resistance state.
24 . The method of claim 22 wherein the memory device is changed from a lower resistance state to a higher resistance state.
25 . The method of claim 21 wherein the active layer is on and in contact with the first electrode, and the second electrode is on and in contact with the active layer.
26 . The method of claim 21 and further comprising a passive layer between the first and second electrodes.