Etching method, semiconductor and fabricating method for the same
View Patent ↗An organic/inorganic hybrid film represented by SiC x- H y O z (x>0, y≧0, z>0) is plasma-etched with an etching gas containing fluorine, carbon and nitrogen. During the etching, a carbon component is eliminated from the surface portion of the organic/inorganic hybrid film due to the existence of the nitrogen in the etching gas, to thereby reform the surface portion. The reformed surface portion is nicely plasma-etched with the etching gas containing fluorine and carbon.
1. An etching method, comprising the steps of:
depositing an organic/inorganic hybrid film on a substrate;
forming a silicon oxide film containing no carbon component on a surface of the organic/inorganic hybrid film; and
plasma-etching the organic/inorganic hybrid film and the silicon oxide film,
wherein the organic/inorganic hybrid film is deposited on the substrate by CVD using a material gas composed of organic silicon containing siloxane having at least one methyl group, has low dielectric constant, and is represented by SiCxHyOz (x>0, y≧0, z>0),
wherein the step of plasma-etching is performed with a gas containing fluorine, carbon and nitrogen, and
wherein the step of forming a silicon oxide film includes forming the silicon oxide film by eliminating a carbon component from a surface portion of the organic/inorganic hybrid film.
2. The etching method of claim 1 , wherein the siloxane having the methyl group is dimethyl dimethylsiloxane or Hexamethyldisiloxane.
3. An etching method, comprising the steps of:
depositing an organic/inorganic hybrid film on a substrate;
forming a silicon oxide film containing no carbon component on a surface of the organic/inorganic hybrid film; and
plasma-etching the organic/inorganic hybrid film and the silicon oxide film,
wherein the organic/inorganic hybrid film is deposited on the substrate by CVD using a material gas composed of organic silicon containing siloxane having at least one methyl group, has low dielectric constant, and is represented by SiCxHyOz (x>0, y≧0, z>0),
wherein the step of plasma-etching is performed with a gas containing fluorine, carbon and nitrogen, and
wherein the step of forming a silicon oxide film includes forming the silicon oxide film by subjecting the organic/inorganic hybrid film to a plasma.
4. The etching method of claim 3 , wherein the siloxane having the methyl group is dimethyl dimethylsiloxane or Hexamethyldisiloxane.
5. A fabricating method for a semiconductor device, comprising the steps of:
depositing an interlayer insulating film on an interconnection layer formed on a substrate, the interlayer insulating film being composed of an organic/inorganic hybrid film having low dielectric constant and represented by SiCxHyOz (x>0, y>0, z>0);
forming a silicon oxide film containing no carbon component on a surface of the interlayer insulating film;
forming a resist pattern having an opening on the silicon oxide film; and
performing plasma etching on the interlayer insulating film with an etching gas containing fluorine, carbon and nitrogen and using the resist pattern as a mask, thereby forming a contact hole or an interconnection groove in the interlayer insulating film,
wherein the interlayer insulating film is deposited by CVD using a material gas composed of organic silicon having at least one methyl group,
wherein the material gas contains siloxane having the methyl group, and
wherein the step of forming a silicon oxide film includes forming the silicon oxide film by eliminating a carbon component from a surface portion of the organic/inorganic hybrid film.
6. A fabricating method for a semiconductor device of claim 5 , wherein the siloxane having the methyl group is dimethyl-dimethylsiloxane or Hexamethyldisiloxane.
7. The fabrication method of a semiconductor device of claim 5 , wherein the step of forming a silicon oxide film further includes subjecting the organic/inorganic hybrid film to a plasma.