Patent Assignment
Reel/Frame 031939/0247
Assignment of Assignor's Interest
Recorded: 2014-01-08
Pages: 12
Assignor
PANASONIC CORPORATION
Executed: 2013-10-30
Assignee
RPX CORPORATION
ONE MARKET PLAZA, STEUART TOWER, SUITE 800, SAN FRANCISCO, CALIFORNIA, 94105
Covered Properties
(61)
A Silicon Oxynitride Film Where the Nitrogen Concentration at the Wafer-Oxynitride Interface Is 8 Atomic Percent or Less
Patent:
5,254,506 →
Application:
07/758,325 →
Autodoping Prevention and Oxide Layer Formation Apparatus
Patent:
5,648,282 →
Application:
08/066,758 →
Plasma Generating Apparatus
Patent:
5,404,079 →
Application:
08/097,230 →
Thin Layer Forming Method Wherein Hydrohobic Mulecular Layers Prevent a BPS6 Layer from Assorbing Moisture
Patent:
5,576,247 →
Application:
08/097,231 →
A Semiconductor Device for Protecting an Internal Circuit from Electrostatic Damage
Patent:
5,514,893 →
Application:
08/207,426 →
Method for Forming a Multi-Layer Metallic Wiring Structure
Patent:
5,385,867 →
Application:
08/216,968 →
High Speed Mis-Type Integrated Circuit with Self-Regulated Back Bias
Patent:
5,672,995 →
Application:
08/340,343 →
Removing Interhalogen Compounds from Semiconductor Manufacturing Equipment
Patent:
5,546,890 →
Application:
08/391,666 →
Method of Manufacturing a Capacitor Having Metal Electrodes
Patent:
5,527,729 →
Application:
08/412,563 →
Voltage-Level Shifter
Patent:
5,650,742 →
Application:
08/413,074 →
Method of Manufacturing a Semiconductor Device
Patent:
5,599,743 →
Application:
08/418,474 →
Semiconductor Device Having an Oxynitride Film
Patent:
5,874,766 →
Application:
08/427,633 →
Semiconductor Device Having Reduced Gate Overlapping Capacitance
Patent:
5,610,430 →
Application:
08/494,384 →
Mos Capacitor and Mos Capacitor Fabrication Method
Patent:
5,973,381 →
Application:
08/508,182 →
Semiconductor Device with a Field-Effect Transistor Having a Lower Re- Sistance Impurity Diffusion Layer, and Method of Manufacturing the Same
Patent:
5,733,812 →
Application:
08/571,131 →
Method of Manufacturing Semiconductor Devices
Patent:
5,599,424 →
Application:
08/571,732 →
Method of Manufacturing Semiconductor Device
Patent:
5,960,300 →
Application:
08/574,690 →
Semiconductor Device Having Polysilicon Electrode Mininization Resulting in a Small Resistance Value
Patent:
5,726,479 →
Application:
08/584,123 →
High Voltage Withstanding Circuit and Voltage Level Shifter
Patent:
5,760,606 →
Application:
08/633,683 →
Semiconductor Device and Method for Manufacturing the Same
Patent:
5,879,983 →
Application:
08/716,571 →
Method of Forming Interconnection Wire
Patent:
6,260,266 →
Application:
08/745,343 →
Voltage Detection Circuit, Power-on/Off Reset Circuit, and Semiconductor Device
Patent:
5,864,247 →
Application:
08/817,746 →
Dry Etching Post-Treatment Method and Method for Manufacturing a Semiconductor Device
Patent:
5,902,134 →
Application:
08/905,736 →
Apparatus and Method of Producing an Electronic Device
Patent:
6,007,673 →
Application:
08/942,441 →
Semiconductor Device Comprising Misfeto and Method of Manufacturing the Same
Patent:
5,986,313 →
Application:
08/988,776 →
Apparatus and Method for Applying Rf Power Apparatus and Method for Generating Plasma and Apparatus and Method for Processing with Plasma
Patent:
6,030,667 →
Application:
08/996,705 →
Semiconductor Manufacturing Apparatus
Patent:
6,214,740 →
Application:
09/051,815 →
Apparatus and Method for Manufacturing Semiconductor Device
Patent:
5,989,929 →
Application:
09/119,588 →
Method for Making Semiconductor Device Containing Low Carbon Film for Interconnect Structures
Patent:
6,333,255 →
Application:
09/137,150 →
Method for Fabricating Semiconductor Device and Method for Controlling Environment Inside Reaction Chamber of Dry Etching Apparatus
Patent:
6,057,247 →
Application:
09/179,936 →
Semiconductor Device Having Multilevel Interconnection Structure and Method for Fabricating the Same
Patent:
6,242,336 →
Application:
09/186,067 →
Semiconductor Device and Method for Manufacturing the Same
Patent:
6,124,160 →
Application:
09/192,536 →
Semiconductor Device and a Method for the Production of the Same
Patent:
6,107,174 →
Application:
09/196,405 →
Voltage Detection Circuit Power-on/Off Reset Circuit and Semiconductor Device
Patent:
6,246,624 →
Application:
09/198,726 →
Method of Manufacturing Semiconductor Device Using a Trench Isolation Technique
Patent:
6,143,626 →
Application:
09/330,068 →
Semiconductor Device
Patent:
6,492,672 →
Application:
09/629,861 →
Method for Fabricating a Semiconductor Device Having a Pocket Dopant Diffused Layer
Patent:
7,091,093 →
Application:
09/662,358 →
Method for Fabricating Semiconductor Device
Patent:
6,432,802 →
Application:
09/662,359 →
Voltage Detection Circuit, Power-on/Off Reset Circuit, and Semiconductor Device
Method of Forming Buried Interconnecting Wire
Semiconductor Device Having Multilevel Interconnection Structure and Method for Fabricating the Same
Etching Method, Semiconductor and Fabricating Method for the Same
Semiconductor Device Having Diffusion Layer Formed Using Dopant of Large Mass Number
Semiconductor Device and Method for Fabricating the Same
Method for Fabricating Semiconductor Device
Voltage Detection Circuit, Power-on/Off Reset Circuit, and Semiconductor Device
Contact Hole Formation Method
Semiconductor Device and Method for Manufacturing the Same
Semiconductor Device and Method for Fabricating the Same
Etching Method, Semiconductor and Fabricating Method for the Same
Voltage Detection Circuit, Power-on/Off Reset Circuit, and Semiconductor Device
Semiconductor Device and Method for Fabricating the Same
Semiconductor Device with Multilayered Metal Pattern
Etching Method, Semiconductor and Fabricating Method for the Same
Semiconductor Device and Manufacturing Method Thereof
Semiconductor Device and Method for Fabricating the Same
Semiconductor Device with Multilayered Metal Pattern
Semiconductor Device and Method for Fabricating the Same
Semiconductor Device
Semiconductor Device with Carbon-Containing Region
Etching Method, Semiconductor and Fabricating Method for the Same
Related Assignments
(3)
Other recorded transfers of the patents in this record — the chain of ownership.
Change of Name
Oct 28, 2013
From: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
To: PANASONIC CORPORATION
Reel/Frame 031506/0602 →
Assignment of Assignor's Interest
Nov 5, 2013
From: HORI, TAKASHI
To: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
Reel/Frame 031549/0734 →
Assignment of Assignor's Interest
Nov 5, 2013
From: UEDA, TETSUYA; UEHARA, TAKASHI; YANO, KOUSAKU; UEDA, SATOSHI
To: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
Reel/Frame 031549/0818 →