Method and apparatus for production of metal film or the like
In a metal film production apparatus, a copper plate member is etched with a Cl 2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl 2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl 2 gas, and the Cl* is supplied into the chamber to withdraw a Cl 2 gas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.
1 . A metal film production apparatus, comprising:
a cylindrical chamber accommodating a substrate;
an etched member formed from a metal, which forms a high vapor pressure halide, and disposed within the chamber at a position opposed to the substrate;
source gas supply means for supplying a source gas containing a halogen to an interior of the chamber between the substrate and the etched member;
film forming plasma generation means which converts the source gas, which has been supplied to the interior of the chamber, into a plasma upon supply of a high frequency electric power to form a source gas plasma within the chamber in order to etch the etched member;
temperature control means for controlling a temperature of the substrate to a predetermined temperature, which is lower than a temperature of the etched member, to deposit a metallic component on the substrate from a precursor comprising the metallic component and the source gas and obtained as a result of etching of the etched member by the source gas plasma, thereby performing predetermined film formation; and
source gas radical replenishment means for replenishing the interior of the chamber with radicals of the source gas.
2 . A metal film production apparatus, comprising:
a cylindrical chamber accommodating a substrate;
an etched member formed from a metal, which forms a high vapor pressure halide, and disposed within the chamber at a position opposed to the substrate;
source gas plasma supply means for forming a source gas plasma containing a halogen outside the chamber, and supplying the source gas plasma to an interior of the chamber between the substrate and the etched member;
temperature control means for controlling a temperature of the substrate to a predetermined temperature, which is lower than a temperature of the etched member, to deposit a metallic component on the substrate from a precursor comprising the metallic component and the source gas and obtained as a result of etching of the etched member by the source gas plasma, thereby performing predetermined film formation; and
source gas radical replenishment means for replenishing the interior of the chamber with radicals of the source gas.
3 . A metal film production apparatus, comprising:
a cylindrical chamber accommodating a substrate;
an etched member formed from a metal, which forms a high vapor pressure halide, and disposed within the chamber at a position other than a position opposed to the substrate;
a shielding plate disposed within the chamber between the substrate and the etched member and having a hole directed toward the substrate;
source gas supply means for supplying a source gas containing a halogen to an interior of the chamber between the etched member and the shielding plate;
film forming plasma generation means which converts the source gas, which has been supplied to the interior of the chamber, into a plasma upon supply of a high frequency electric power to form a source gas plasma within the chamber in order to etch the etched member;
temperature control means for controlling a temperature of the substrate to a predetermined temperature, which is lower than a temperature of the etched member, to deposit a metallic component on the substrate from a precursor comprising the metallic component and the source gas and obtained as a result of etching of the etched member by the source gas plasma, thereby performing predetermined film formation; and
source gas radical replenishment means for replenishing the interior of the chamber with radicals of the source gas.
4 . The metal film production apparatus according to any one of claims 1 , 2 and 3 , wherein the source gas radical replenishment means supplies a high frequency electric current to a coil wound round a tubular passage communicating with the interior of the chamber for flowing the source gas, and converts the source gas into a plasma by an action of an electric field formed by supply of the high frequency electric current.
5 . The metal film production apparatus according to any one of claims 1 , 2 and 3 , wherein the source gas radical replenishment means has microwave supply means in a tubular passage communicating with the interior of the chamber for flowing the source gas, and converts the source gas into a plasma by an action of microwaves generated by the microwave supply means.
6 . The metal film production apparatus according to any one of claims 1 , 2 and 3 , wherein the source gas radical replenishment means has heating means for heating the source gas flowing through a tubular passage communicating with the interior of the chamber to dissociate the source gas thermally.
7 . The metal film production apparatus according to any one of claims 1 , 2 and 3 , wherein the source gas radical replenishment means has electromagnetic wave generation means for supplying electromagnetic waves, such as laser light or electron beams, to the source gas flowing through a tubular passage communicating with the interior of the chamber to dissociate the source gas.
8 . A metal film production apparatus, comprising:
a cylindrical chamber accommodating a substrate;
an etched member formed from a metal, which forms a high vapor pressure halide, and disposed within the chamber at a position opposed to the substrate;
source gas supply means for supplying a source gas containing a halogen to an interior of the chamber between the substrate and the etched member;
film forming plasma generation means which converts the source gas, which has been supplied to the interior of the chamber, into a plasma upon supply of a high frequency electric power to form a source gas plasma within the chamber in order to etch the etched member;
temperature control means for controlling a temperature of the substrate to a predetermined temperature, which is lower than a temperature of the etched member, to deposit a metallic component on the substrate from a precursor comprising the metallic component and the source gas and obtained as a result of etching of the etched member by the source gas plasma, thereby performing predetermined film formation; and
rare gas supply means for supplying a rare gas, which has a mass equal to or larger than a mass of Ne, into the chamber in addition to the source gas.
9 . A metal film production apparatus, comprising:
a cylindrical chamber accommodating a substrate;
an etched member formed from a metal, which forms a high vapor pressure halide, and disposed within the chamber at a position opposed to the substrate;
source gas plasma supply means for forming a source gas plasma containing a halogen outside the chamber, and supplying the source gas plasma to an interior of the chamber between the substrate and the etched member;
temperature control means for controlling a temperature of the substrate to a predetermined temperature, which is lower than a temperature of the etched member, to deposit a metallic component on the substrate from a precursor comprising the metallic component and the source gas and obtained as a result of etching of the etched member by the source gas plasma, thereby performing predetermined film formation; and
rare gas supply means for supplying a rare gas, which has a mass equal to or larger than a mass of Ne, into the chamber in addition to the source gas.
10 . A metal film production apparatus, comprising:
a cylindrical chamber accommodating a substrate;
an etched member formed from a metal, which forms a high vapor pressure halide, and disposed within the chamber at a position other than a position opposed to the substrate;
a shielding plate disposed within the chamber between the substrate and the etched member and having a hole directed toward the substrate;
source gas supply means for supplying a source gas containing a halogen to an interior of the chamber between the etched member and the shielding plate;
film forming plasma generation means which converts the source gas, which has been supplied to the interior of the chamber, into a plasma upon supply of a high frequency electric power to form a source gas plasma within the chamber in order to etch the etched member;
temperature control means for controlling a temperature of the substrate to a predetermined temperature, which is lower than a temperature of the etched member, to deposit a metallic component on the substrate from a precursor comprising the metallic component and the source gas and obtained as a result of etching of the etched member by the source gas plasma, thereby performing predetermined film formation; and
rare gas supply means for supplying a rare gas, which has a mass equal to or larger than a mass of Ne, into the chamber in addition to the source gas.
11 . A metal film production apparatus, comprising:
a cylindrical chamber accommodating a substrate;
an etched member formed from a metal, which forms a high vapor pressure halide, and disposed within the chamber at a position opposed to the substrate;
source gas supply means for supplying a source gas containing a halogen to an interior of the chamber between the substrate and the etched member;
film forming plasma generation means which converts the source gas, which has been supplied to the interior of the chamber, into a plasma upon supply of a high frequency electric power to form a source gas plasma within the chamber in order to etch the etched member;
temperature control means for controlling a temperature of the substrate to a predetermined temperature, which is lower than a temperature of the etched member, to deposit a metallic component on the substrate from a precursor comprising the metallic component and the source gas and obtained as a result of etching of the etched member by the source gas plasma, thereby performing predetermined film formation; and
electromagnetic wave generation means for supplying electromagnetic waves into the chamber to dissociate the source gas generated in accordance with a film formation reaction.
12 . A metal film production apparatus, comprising:
a cylindrical chamber accommodating a substrate;
an etched member formed from a metal, which forms a high vapor pressure halide, and disposed within the chamber at a position opposed to the substrate;
source gas plasma supply means for forming a source gas plasma containing a halogen outside the chamber, and supplying the source gas plasma to an interior of the chamber between the substrate and the etched member;
temperature control means for controlling a temperature of the substrate to a predetermined temperature, which is lower than a temperature of the etched member, to deposit a metallic component on the substrate from a precursor comprising the metallic component and the source gas and obtained as a result of etching of the etched member by the source gas plasma, thereby performing predetermined film formation; and
electromagnetic wave generation means for supplying electromagnetic waves into the chamber to dissociate the source gas generated in accordance with a film formation reaction.
13 . A metal film production apparatus, comprising:
a cylindrical chamber accommodating a substrate;
an etched member formed from a metal, which forms a high vapor pressure halide, and disposed within the chamber at a position other than a position opposed to the substrate;
a shielding plate disposed within the chamber between the substrate and the etched member and having a hole directed toward the substrate;
source gas supply means for supplying a source gas containing a halogen to an interior of the chamber between the etched member and the shielding plate;
film forming plasma generation means which converts the source gas, which has been supplied to the interior of the chamber, into a plasma upon supply of a high frequency electric power to form a source gas plasma within the chamber in order to etch the etched member;
temperature control means for controlling a temperature of the substrate to a predetermined temperature, which is lower than a temperature of the etched member, to deposit a metallic component on the substrate from a precursor comprising the metallic component and the source gas and obtained as a result of etching of the etched member by the source gas plasma, thereby performing predetermined film formation; and
electromagnetic wave generation means for supplying electromagnetic waves into the chamber to dissociate the source gas generated in accordance with a film formation reaction.
14 . A metal film production apparatus, comprising:
a cylindrical chamber accommodating a substrate;
an etched member formed from a composite metal, which comprises a plurality of metallic components forming high vapor pressure halides, and disposed within the chamber at a position opposed to the substrate;
source gas supply means for supplying a source gas containing a halogen to an interior of the chamber between the substrate and the etched member;
film forming plasma generation means which converts the source gas, which has been supplied to the interior of the chamber, into a plasma upon supply of a high frequency electric power to form a source gas plasma within the chamber in order to etch the etched member; and
temperature control means for controlling a temperature of the substrate to a predetermined temperature, which is lower than a temperature of the etched member, to deposit the plurality of metallic components on the substrate from a plurality of precursors comprising the metallic components and the source gas and obtained as a result of etching of the etched member by the source gas plasma, thereby performing predetermined film formation.
15 . A metal film production apparatus, comprising:
a cylindrical chamber accommodating a substrate;
an etched member formed from a composite metal, which comprises a plurality of metallic components forming high vapor pressure halides, and disposed within the chamber at a position opposed to the substrate;
source gas plasma supply means for forming a source gas plasma containing a halogen outside the chamber, and supplying the source gas plasma to an interior of the chamber between the substrate and the etched member; and
temperature control means for controlling a temperature of the substrate to a predetermined temperature, which is lower than a temperature of the etched member, to deposit the plurality of metallic components on the substrate from a plurality of precursors comprising the metallic components and a source gas and obtained as a result of etching of the etched member by the source gas plasma, thereby performing predetermined film formation.
16 . A metal film production apparatus, comprising:
a cylindrical chamber accommodating a substrate;
an etched member formed from a composite metal, which comprises one or more metallic components and one or more nonmetallic components forming high vapor pressure halides, and disposed within the chamber at a position opposed to the substrate;
source gas supply means for supplying a source gas containing a halogen to an interior of the chamber between the substrate and the etched member;
film forming plasma generation means which converts the source gas, which has been supplied to the interior of the chamber, into a plasma upon supply of a high frequency electric power to form a source gas plasma within the chamber in order to etch the etched member; and
temperature control means for controlling a temperature of the substrate to a predetermined temperature, which is lower than a temperature of the etched member, to deposit the metallic components and the nonmetallic components simultaneously on the substrate from one or more precursors comprising the metallic components and the source gas and one or more precursors comprising the nonmetallic components and the source gas obtained as a result of etching of the etched member by the source gas plasma, thereby performing predetermined film formation.
17 . A metal film production apparatus, comprising:
a cylindrical chamber accommodating a substrate;
an etched member formed from a composite metal, which comprises one or more metallic components and one or more nonmetallic components forming high vapor pressure halides, and disposed within the chamber at a position opposed to the substrate;
source gas plasma supply means for forming a source gas plasma containing a halogen outside the chamber, and supplying the source gas plasma to an interior of the chamber between the substrate and the etched member; and
temperature control means for controlling a temperature of the substrate to a predetermined temperature, which is lower than a temperature of the etched member, to deposit the metallic components and the nonmetallic components simultaneously on the substrate from one or more precursors comprising the metallic components and a source gas and one or more precursors comprising the nonmetallic components and the source gas obtained as a result of etching of the etched member by the source gas plasma, thereby performing predetermined film formation.
18 . The metal film production apparatus according to any one of claims 1 - 3 and 8 - 13 , wherein
the etched member formed from the metal is formed from a composite metal comprising a plurality of metallic components, and
the predetermined film formation is performed by depositing the plurality of metallic components on the substrate from a plurality of the precursors comprising the metallic components and the source gas which have been obtained as a result of etching of the etched member by the source gas plasma.
19 . The metal film production apparatus according to any one of claims 1 - 3 and 8 - 13 , wherein
the etched member formed from the metal is formed from a composite metal comprising one or more metallic components and one or more nonmetallic components, and
the predetermined film formation is performed by depositing the metallic components and the nonmetallic components simultaneously on the substrate from one or more of the precursors comprising the metallic components and the source gas and one or more of the precursors comprising the nonmetallic components and the source gas which have been obtained as a result of etching of the etched member by the source gas plasma.
20 . An interconnection structure forming apparatus for forming a predetermined interconnection structure in a depression, such as a trench or a hole, formed in a substrate, by disposing an etched member, formed from a metal forming a high vapor pressure halide, in a chamber accommodating the substrate in an interior thereof; etching the etched member with a source gas plasma containing a halogen within the chamber to form a precursor comprising a metallic component and a source gas; and controlling temperatures of the etched member and the substrate so as to be predetermined temperatures and so as to provide a predetermined temperature difference between the temperatures, thereby depositing the metallic component of the precursor on the substrate to perform film formation,
said apparatus permitting coexistence of a film formation reaction for forming the film of the metal, and an etching reaction for etching the metal film, formed by the film formation reaction, with a plasma of the source gas; and having control means for exercising control such that a speed of the film formation reaction is higher than a speed of the etching reaction, thereby stacking the metal film in the depression sequentially, starting at a bottom of the depression, to form the predetermined interconnection structure.