Interconnection structure
View Patent ↗In a metal film production apparatus, a copper plate member is etched with a Cl 2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl 2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl 2 gas, and the Cl* is supplied into the chamber to withdraw a Cl 2 gas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.
1. An interconnection structure formed by burying a metal film in a depression, such as a trench or a hole, formed in a substrate,
said metal film comprising a single crystal-like crystal metal film,
said single crystal-like metal film being formed by:
making a film formation reaction and an etching reaction coexistent, said film formation reaction being a reaction in which a precursor comprising a metallic component and a source gas is adsorbed onto the substrate, and then the metallic component is deposited to form a metal film of a metal of the metallic component, and said etching reaction being a reaction in which the metal film formed by said film formation reaction is etched with a plasma of the source gas; and
exercising control such that a speed of said film formation reaction is higher than a speed of said etching reaction, thereby stacking the metal film as a single crystal-like crystal in the depression sequentially, starting at a bottom of the depression.
2. A multilayer interconnection structure formed integrally by burying a metal film in a depression, such as a trench or a hole, in multiple layers formed in a substrate for formation of the multilayer interconnection structure,
said metal film comprising a single crystal-like crystal metal film,
said single crystal-like metal film being formed by:
making a film formation reaction and an etching reaction coexistent, said film formation reaction being a reaction in which a precursor comprising a metallic component and a source gas is adsorbed onto the substrate, and then the metallic component is deposited to form a metal film of a metal of the metallic component, and said etching reaction being a reaction in which the metal film formed by said film formation reaction is etched with a plasma of the source gas; and
exercising control such that a speed of said film formation reaction is higher than a speed of said etching reaction, thereby stacking the metal film as a single crystal-like crystal in the depression sequentially, starting at a bottom of the depression.
3. The multilayer interconnection structure according to claim 2 , wherein a harrier metal layer is formed on a surface of the depression of the substrate.
4. The multilayer interconnection structure according to claim 1 , wherein the single crystal-like crystal metal film is formed by a metal film production apparatus, which
disposes an etched member, formed from a metal forming a high vapor pressure halide, in a chamber accommodating the substrate in an interior thereof;
etches the etched member with a source gas plasma containing a halogen within the chamber to form the precursor comprising the metallic component and the source gas; and
controls temperatures of the etched member and the substrate so as to be predetermined temperatures and so as to provide a predetermined temperature difference between the temperatures, thereby depositing the metallic component of the precursor on the substrate to perform predetermined film formation.
5. The multilayer interconnection structure according to claim 2 , wherein the single crystal-like crystal metal film is formed by a metal film production apparatus, which
disposes an etched member, formed from a metal forming a high vapor pressure halide, in a chamber accommodating the substrate in an interior thereof;
etches the etched member with a source gas plasma containing a halogen within the chamber to form the precursor comprising the metallic component and the source gas; and
controls temperatures of the etched member and the substrate so as to be predetermined temperatures and so as to provide a predetermined temperature difference between the temperatures, thereby depositing the metallic component of the precursor on the substrate to perform predetermined film formation.
6. The multilayer interconnection structure according to claim 3 , wherein the single crystal-like crystal metal film is formed by a metal film production apparatus, which
disposes an etched member, formed from a metal forming a high vapor pressure halide, in a chamber accommodating the substrate in an interior thereof;
etches the etched member with a source gas plasma containing a halogen within the chamber to form the precursor comprising the metallic component and the source gas; and
controls temperatures of the etched member and the substrate so as to be predetermined temperatures and so as to provide a predetermined temperature difference between the temperatures, thereby depositing the metallic component of the precursor on the substrate to perform predetermined film formation.