Bump structure
View Patent ↗A semiconductor device, which is capable of suppressing interfacial breakdown between a solder ball and a conductive film, is provided. The semiconductor device of the present invention, when “a” is distance between a terminal part of the solder ball 108 in a face coming into contact with an insulating resin layer 105 and an upper periphery of a via 104 , and “b” is distance between a terminal part of the UBM film 107 and the upper periphery of the via 104 , the semiconductor device is made to fulfill with 0<a/b≦2.
1. A semiconductor device comprising:
an interconnection;
an insulating film provided above said interconnection, said insulating film being provided with a hole reaching said interconnection;
a conductive film made contact with said interconnection in a bottom of said hole, said conductive film being formed across from said bottom of said hole to outside said hole; and
a solder ball provided in contact with said conductive film and said insulating film,
wherein when “a” is distance between a terminal part of the solder ball in a face made contact with said insulating film and an upper periphery of said hole, and “b” is depth of said hole, value of a/b is not more than 2.
2. The semiconductor device according to claim 1 , further comprising an alloy layer containing a first metallic element contained in said solder ball and a second metallic element contained in said conductive film between said solder ball and said conductive film.
3. The semiconductor device according to claim 1 , wherein said insulating film includes a protection film provided above said interconnection and a stress buffer resin layer provided above said protection film; an elastic modulus of said stress buffer resin layer is from not less than 1 GPa to not more than 5 GPa.
4. The semiconductor device according to claim 3 , wherein said stress buffer resin layer is composed of polyimide or polybenzoxazole.
5. The semiconductor device according to claim 3 , a thickness of said stress buffer resin layer is from not less than 1 μm to not more than 10 μm.
6. The semiconductor device according to claim 1 , wherein said solder ball is composed of a lead-free solder containing Sn.
7. The semiconductor device according to claim 1 , wherein a surface part of said conductive film contains copper or nickel.
8. The semiconductor device according to claim 1 , wherein said solder ball is formed so as to cover said conductive film.
9. A semiconductor device comprising:
an interconnection;
an insulating layer comprising a protection layer provided above said interconnection and a stress buffer resin layer provided above the protection film, said insulating film being provided with a hole reaching said interconnection;
a conductive film made contact with said interconnection and extending outside said hole on said insulating layer; and a solder ball provided in contact with said conductive film and said buffer resin layer,
wherein said conductive film includes a ball underlying metal film made contact with said solder ball, and a barrier metal film provided between said interconnection and said ball underlying metal film; when “c” is distance between a terminal part of said ball underlying metal film and an upper periphery of said hole, and “b” is depth of said hole, value of c/b is not more than 1.3.
10. The semiconductor device according to claim 9 , further comprising an alloy layer containing a first metallic element contained in said solder ball and a second metallic element contained in said conductive film between said solder ball and said conductive film.
11. The semiconductor device according to claim 9 , wherein said insulating film includes a protection film provided above said interconnection and a stress buffer resin layer provided above said protection film; an elastic modulus of said stress buffer resin layer is from not less than 1 GPa to not more than 5 GPa.
12. The semiconductor device according to claim 11 , wherein said stress buffer resin layer is composed of polyimide or polybenzoxazole.
13. The semiconductor device according to claim 11 , a thickness of said stress buffer resin layer is from not less than 1 μm to not more than 10 μm.
14. The semiconductor device according to claim 9 , wherein said solder ball is composed of a lead-free solder containing Sn.
15. The semiconductor device according to claim 9 , wherein a surface part of said conductive film contains copper or nickel.
16. The semiconductor device according to claim 9 , wherein said solder ball is formed so as to cover said conductive film.