Short wavelength diode-pumped solid-state laser
A diode-pumped solid-state laser including a short wavelength (e.g., blue, violet, or UV) semiconductor laser that pumps an absorption transition in a rare-earth-doped material. Responsive to this pumping, the rare-earth active ion directly emits laser radiation. A number of different wavelength outputs, including short wavelengths, are achievable dependent upon the material and the pump wavelength. The gain medium may include an active ion selected from Er 3+ Sm 3+ , Eu 3+ , Tb 3+ , Dy 3+ , Tm 3+ , Ho 3+ , and Pr 3+ . A laser diode pump source has a wavelength in the range of about 365 nm to 480 nm to excite a laser emission in the range of 370 to 800 nm. The laser diode pump source may comprise a GaN-based semiconductor. In some embodiments, the laser diode pump source supplies a pump beam in a range of 370–380 nm, 400–415 nm, 435–445 nm, or 468–478 nm.
1. A diode-pumped, solid-state laser that emits an output beam having a short wavelength, comprising:
a laser cavity including a first and a second end mirror;
a gain medium situated within said laser cavity, said gain medium including a rare-earth doped solid state material providing a lasing transition from an upper laser level to a lower laser level; and
a laser diode pump source arranged to pump said gain medium, said laser diode pump source having a wavelength in the range of about 365 nm to 480 nm to excite said rare-earth element to an energy level at least equal to said upper laser level, thereby providing a laser emission from said lasing transition within said laser cavity in the range of 370 to 800 nm,
wherein said rare-earth doped gain medium comprises an active ion comprising Sm 3+ , and wherein said lasing transition is to a terminal level 4 G 5/2 from said upper laser level which is selected from one of 6 H 5/2 , 6 H 7/2 , 6 H 9/2 , and 6 H 11/2 .
2. The laser of claim 1 , wherein said upper laser level is 6 H 5/2 .
3. The laser of claim 1 , wherein said upper laser level is 6 H 7/2 .
4. The laser of claim 1 , wherein said upper laser level is 6 H 9/2 .
5. The laser of claim 1 , wherein said upper laser level is 6 H 11/2 .
6. A diode-pumped, solid-state laser that emits an output beam having a short wavelength comprising:
a laser cavity including a first and a second end mirror;
a gain medium situated within said laser cavity, said gain medium including a rare-earth doped solid state material providing a lasing transition from an upper laser level to a lower laser level; and
a laser diode pump source arranged to pump said gain medium, said laser diode pump source having a wavelength in the range of about 365 nm to 480 nm to excite said rare-earth element to an energy level at least equal to said upper laser level, thereby providing a laser emission from said lasing transition within said laser cavity in the range of 370 to 800 nm,
wherein said rare-earth doped gain medium comprises an active ion comprising Dy 3+ , and wherein said lasing transition has said upper laser level of 4 F 9/2 and a terminal level which is one of 6 H 11/2 , 6 H 13/2 , and 6H 15/2 .
7. The laser of claim 6 , wherein said terminal level is 6 H 11/2 .
8. The laser of claim 6 , wherein said terminal level is 6 H 13/2 .
9. The laser of claim 6 , wherein said terminal level is 6 H 15/2 .
10. A diode-pumped, solid-state laser that emits an output beam having a short wavelength, comprising:
a laser cavity including a first and a second end mirror;
a gain medium situated within said laser cavity, said gain medium including a rare-earth doped solid state material providing a lasing transition from an upper laser level to a lower laser level; and
a laser diode pump source arranged to pump said gain medium, said laser diode pump source having a wavelength in the range of about 365 nm to 480 nm to excite said rare-earth element to an energy level at least equal to said upper laser level, thereby providing a laser emission from said lasing transition within said laser cavity in the range of 370 to 800 nm,
wherein said rare-earth doped gain medium comprises an active ion comprising Tm3+, and wherein said lasing transition has said upper laser level of 1 G 4 and a terminal level of 3 H 6 .
11. A diode-pumped, solid-state laser that emits an output beam having a short wavelength, comprising:
a laser cavity including a first and a second end mirror;
a gain medium situated within said laser cavity, said gain medium including a rare-earth doped solid state material providing a lasing transition from an upper laser level to a lower laser level; and
a laser diode pump source arranged to pump said gain medium, said laser diode pump source having a wavelength in the range of about 365 nm to 480 nm to excite said rare-earth element to an energy level at least equal to said upper laser level, thereby providing a laser emission from said lasing transition within said laser cavity in the range of 370 to 800 nm,
wherein said rare-earth doped gain medium comprises an active ion of Ho 3+ , and wherein said lasing transition is one of 544 nm, 541 mm, 487 nm, 476 nm, 455 nm, and 419 nm.
12. The laser of claim 11 , wherein said lasing transition is 544 nm.
13. The laser of claim 11 , wherein said lasing transition is 541 mm.
14. The laser of claim 11 , wherein said lasing transition is 487 nm.
15. The laser of claim 11 , wherein said lasing transition is 476 nm.
16. The laser of claim 11 , wherein said lasing transition is 455 nm.
17. The laser of claim 11 , wherein said lasing transition is 419 nm.