Forming of oblique trenches
A method for forming an oblique recess of minimum dimension smaller than 10 μm in a wafer arranged in a plasma etch reactor in which the plasma extends along the wafer surface, including forming discontinuities in the contour of the plasma and of its sheath in the immediate vicinity of the wafer in areas where recesses delimited by openings in a protection mask are desired to be formed at the wafer surface.
1. A method of forming a vertical high-voltage diode, comprising:
providing a wafer comprising a substrate with an upper surface, the wafer having doped regions and protrusions on the upper surface;
forming first and second oblique trenches that cross the upper surface and at least partially penetrate the substrate;
wherein forming the first and second oblique trenches comprises plasma etching the wafer in areas close to the protrusions.
2. The method of claim 1 , further comprising placing a mask over the upper surface before plasma etching, the mask including openings where the trenches are to be formed.
3. The method of claim 2 , wherein forming the trenches comprises forming a plurality of recesses with plasma etching and oxidizing regions between the recesses to form continuous trenches.
4. The method of claim 1 , wherein forming the trenches comprises forming trenches having sectional dimensions smaller than 10 μm.
5. The method of claim 1 , wherein providing a wafer having protrusions on the upper surface comprises forming protrusions of a height greater that 100 μm on the upper surface.
6. The method of claim 5 , wherein forming protrusions comprises depositing and etching a layer on the wafer.
7. The method of claim 1 , wherein forming trenches comprises forming trenches having a depth of between 10 μm and 300 μm.
8. A method of forming a semiconductor chip, the method comprising:
providing a silicon wafer having a wafer surface;
subjecting the silicon wafer to plasma etch; and
deforming a contour of the plasma etch so that ions from the plasma etch are projected in a direction that is oblique to the wafer surface.
9. The method of claim 8 , wherein deforming a contour of the plasma etch comprises providing protrusions on the wafer surface.
10. The method of claim 8 , further comprising forming an oblique recess having a sectional dimension smaller than 10 μm with the ions from the plasma etch.
11. The method of claim 8 , further comprising forming protrusions of a height greater than 100 μm on the wafer with the ions from the plasma etch.
12. The method of claim 8 , further comprising forming recesses having a depth of from 10 μm to 300 μm with the ions from the plasma etch.