Silicon carbide Schottky diodes and fabrication method
A semiconductor device and method of formation wherein a disjointed termination layer 102 is formed around a Schottky metal region 110. A SiC substrate 104 is provided, on top of which a SiC blocking layer 108 is disposed. The disjointed termination layer 102 is formed above the SiC blocking layer 108. The termination is preferably an epitaxial SiC layer. The Schottky metal region 110 is formed on the blocking layer 108, preferably on the C-face of the blocking layer.
1 . A method of forming a semiconductor device comprising:
providing a SiC substrate;
providing a SiC blocking layer above the substrate;
forming a termination layer above the SiC blocking layer;
patterning the termination layer to form a disjointed termination region;
patterning a Schottky metal region; and
depositing metal in the Schottky metal region.
2 . The method of claim 1 wherein the termination layer is SiC.
3 . The method of claim 1 wherein the termination layer is an epitaxial layer.
4 . The method of claim 1 wherein at least a portion of the Schottky metal region is formed on the C-face of the blocking layer.
5 . The method of claim 1 wherein:
the substrate is an n-type;
the blocking layer is an n-type; and
the termination layer is a p-type.
6 . The method of claim 1 wherein at least a portion of the Schottky metal region is formed from titanium.
7 . The method of claim 1 wherein at least a portion of the Schottky region is formed from tantalum.
8 . The method of claim 1 wherein at least a portion of the Schottky region is formed from nickel.
9 . The method of claim 1 further comprising:
providing a gold layer on the Schottky metal region.
10 . The method of claim 1 wherein the termination layer is doped to a level in the range of about 1×10 17 cm−3 to about 1×10 20 cm−3.
11 . The method of claim 10 wherein the termination layer is doped to a level in the range of about 5×10 17 cm −3 to about 5×10 18 cm −3 .
12 . The method of claim 1
wherein the termination layer is patterned using ICP etching.
13 . The method of claim 1
wherein the termination layer is patterned using RIE etching.
14 . The method of claim 1 comprising rapid thermal annealing the contact after the metal is deposited.
15 . The method of claim 1 comprising depositing the Schottky metal region by e-beam deposition.
16 . The method of claim 1 comprising patterning the Schottky metal region by lift off.
17 . The method of claim 1 comprising rapid thermal annealing the Schottky metal region after it is patterned.
18 . The method of claim 1 wherein the thickness of the termination layer is in the range of about 0.05 μm to about 2.0 μm.
19 . The method of claim 18 wherein the thickness of the termination layer is in the range of about 0.1 μm to about 0.5 μm.
20 . A Schottky diode formed according to claim 1 .
21 . A semiconductor device comprising:
a SiC substrate;
a SiC blocking layer above the substrate;
a disjointed termination layer above the SiC blocking layer; and
a Schottky metal region.
22 . The device of claim 21 wherein:
the substrate is an n-type;
the blocking layer is an n-type; and
the termination layer is a p-type.
23 . The device of claim 21 wherein at least a portion of the Schottky metal region is formed from titanium.
24 . The device of claim 21 wherein at least a portion of the Schottky metal region is formed from tantalum.
25 . The device of claim 21 wherein at least a portion of the Schottky metal region is formed from nickel.
26 . The device of claim 21 further comprising:
a gold layer on the Schottky metal region.
27 . The device of claim 21 wherein the termination layer has a doping in the range of about 1×10 17 cm −3 to about 1×10 20 cm −3 .
28 . The device of claim 27 wherein the termination layer has a doping level in the range of about 5×10 17 cm −3 to about 5×10 18 cm −3 .
29 . The device of claim 21 wherein the termination layer is SiC.
30 . The device of claim 21 wherein the termination layer is an epitaxial layer.
31 . The device of claim 21 wherein at least a portion of the Schottky metal region is formed on the C-face of the blocking layer.
32 . The device of claim 21 wherein the thickness of the termination layer is in the range of about 0.05 μm to about 2.0 μm.
33 . The device of claim 32 wherein the thickness of the termination layer is in the range of about 0.1 μm to about 0.5 μm.