High efficiency trap for deposition process
The present invention provides a system, apparatus and method for improving the efficiency of a semiconductor processing system, such as a deposition system by decreasing or substantially eliminating the accumulation of by-products in the apparatus components of the semiconductor processing system. The present invention further relates to improving the efficiency of a foreline trap associated with a semiconductor processing system, wherein the trap removes substantially all of the by-products from the exhaust gas from the processing chamber. In addition, the present invention provides a system, apparatus and method for efficiently clearing traps of accumulated by-products from exhaust gas of a semiconductor processing system.
1 . A semiconductor processing system including at least one series of traps for removing substantially all by-products from an exhaust stream of a vacuum processing unit.
2 . The semiconductor processing system according to claim 1 , further including a fluorine source associated with said series of traps, said fluorine source providing fluorine to said traps to etch accumulated by-products from said traps.
3 . The semiconductor processing system according to claim 1 , wherein at least two parallel series of traps are included.
4 . A semiconductor processing system including at least one trap for removing substantially all by-products from an exhaust stream of a vacuum processing unit; a reactive gas source for providing reactive gas to said trap to drive the reaction of the by-products in the exhaust gas to completion within said trap; and a fluorine source for providing fluorine to said trap to etch accumulated by-products from said trap.
5 . The semiconductor processing system according to claim 4 , wherein at least two parallel series of traps are included.
6 . A method of removing by-products from an exhaust gas of a semiconductor processing unit, said method comprising:
passing said exhaust gas through a series of traps to remove substantially all of said by-products from said exhaust gas; and
introducing fluorine to said series of traps to etch accumulated by-products from said traps.
7 . A method of removing by-products from an exhaust gas of a semiconductor processing unit, said method comprising:
passing said exhaust gas through a trap;
introducing a reactive gas to said trap to drive the reaction of said by-products in said exhaust gas to completion in said trap; and
introducing fluorine to said series of trap to etch accumulated by-products from said trap.