Semiconductor device
View Patent ↗The semiconductor device comprises: a semiconductor substrate (N + substrate 110 ) containing a first conductivity type impurity implanted therein; a second conductivity type impurity-implanted layer (P + implanted layer 114 ) at relatively high concentration, formed on the semiconductor substrate (N + substrate 110 ); a second conductivity type impurity epitaxial layer (P − epitaxial layer 111 ) at relatively low concentration, formed on the second conductivity type impurity-implanted layer (P + implanted layer 114 ); and a field effect transistor 100 (N-channel type lateral MOSFET 100 ) composed of a pair of impurity diffusion regions (N + source diffusion layer 115 and N − drain layer 116 ) provided in the second conductivity type impurity epitaxial layer (P − epitaxial layer 111 ) and a gate electrode 117 provided over a region sandwiched with the pair of impurity diffusion regions (N + source diffusion layer 115 and N − drain layer 116 ).
1. A semiconductor device, comprising:
a semiconductor substrate containing a first conductivity type impurity implanted in said semiconductor substrate;
a second conductivity type impurity-implanted layer at a relatively high concentration, formed on said semiconductor substrate;
a second conductivity type impurity epitaxial layer at a relatively low concentration, formed on said second conductivity type impurity-implanted layer; and
a field effect transistor comprising:
a pair of impurity diffusion regions provided in said second conductivity type impurity epitaxial layer; and
a gate electrode provided over a region disposed between said pair of impurity diffusion regions; and
a second conductivity type impurity source buried layer that contacts with said semiconductor substrate and with said second conductivity type impurity-implanted layer.
2. The semiconductor device according to claim 1 , wherein said first conductivity type impurity includes As or Sb.
3. The semiconductor device according to claim 1 , wherein an insulating film is provided to cover an upper face and a side face of said gate electrode, and a polysilicon electrode is provided to contact with an upper face of said insulating film.
4. The semiconductor device according to claim 1 , wherein a source electrode is provided on an upper portion of said impurity diffusion region, another source electrode, which is different from said source electrode, is provided on a back surface of said semiconductor substrate, and said second conductivity type impurity source buried layer is coupled to said another source electrode.
5. The semiconductor device according to claim 4 , wherein said another source electrode is provided to cover an entire back surface of said semiconductor substrate.
6. The semiconductor device according to claim 4 , wherein a region implanted with a first conductivity type impurity is provided to contact with a lower surface of said source electrode, and said second conductivity type impurity source buried layer contacts with said source electrode.
7. The semiconductor device according to claim 1 , wherein a concentration of said second conductivity type impurity epitaxial layer is lower than a concentration of said second conductivity type impurity-implanted layer.
8. The semiconductor device according to claim 1 , wherein said first conductivity type impurity comprises boron or aluminum.
9. The semiconductor device according to claim 1 , wherein said semiconductor substrate comprises an N-type substrate.
10. The semiconductor device according to claim 1 , wherein said second conductivity type impurity-implanted layer comprises a P-type layer.
11. The semiconductor device according to claim 1 , wherein a diffusion coefficient of said first conductivity type impurity is smaller than a diffusion coefficient of a second conductivity type impurity implanted in said second conductivity type impurity implanted layer.
12. The semiconductor device according to claim 7 , wherein the concentration of said second conductivity type impurity-implanted layer is 1×10 −16 cm −3 or more.
13. The semiconductor device according to claim 7 , wherein a thickness of said second conductivity type impurity-implanted layer is 1 μm or more.