IP Library › Granted Patent US 7,326,950
Granted Patent B2
US 7,326,950 · App. 11/146,091 · Granted Feb 5, 2008

Memory device with switching glass layer

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Quick Facts
Patent No.
US 7,326,950
App. No.
11/146,091
Granted
Feb 5, 2008
Kind
B2
Abstract

A memory device, such as a PCRAM, including a chalcogenide glass backbone material with germanium telluride glass and methods of forming such a memory device.

Claims (13)

1. A method of forming a memory device, comprising:

providing a first electrode and a second electrode;

providing a metal-chalcogenide layer between said first and second electrodes, wherein said metal-chalcogenide layer comprises tin selenide; and

providing a germanium telluride glass between said first and second electrodes and in contact with said metal-chalcogenide layer.

2. The method of claim 1 , wherein said metal-chalcogenide layer is between said chalcogenide glass layer and said second electrode.

3. The method of claim 1 , wherein said metal-chalcogenide layer comprises silver selenide.

4. The method of claim 1 , wherein said germanium telluride layer has a stoichiometric formula Ge x Te 100-x , where x is about 44 to about 53.

5. The method of claim 1 , wherein said germanium telluride layer has a stoichiometric formula Ge x Te 100-x , where x is about 46 to about 51.

6. The method of claim 1 , wherein said germanium telluride layer has a stoichiometric formula Ge x Te 100-x , where x is about 47.

7. The method of claim 1 , further comprising providing a metal layer between said metal-chalcogenide layer and said second electrode.

8. The method of claim 7 , wherein said metal layer comprises silver.

9. The method of claim 7 , further comprising providing a first chalcogenide glass layer between said metal-chalcogenide layer and said metal layer.

10. The method of claim 9 , further comprising providing a second chalcogenide glass layer between said metal layer and said second electrode.

Assignments (7)
RELEASE OF SECURITY INTEREST Recorded Nov 12, 2019
From: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
Reel/Frame 051028/0001 →
RELEASE OF SECURITY INTEREST Recorded Oct 9, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050937/0001 →
RELEASE OF SECURITY INTEREST Recorded Aug 23, 2018
From: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 047243/0001 →
SECURITY INTEREST Recorded Jul 13, 2018
From: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 047540/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REPLACE ERRONEOUSLY FILED PATENT #7358718 WITH THE CORRECT PATENT #7358178 PREVIOUSLY RECORDED ON REEL 038669 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST. Recorded Jun 8, 2017
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 043079/0001 →
PATENT SECURITY AGREEMENT Recorded Jun 2, 2016
From: MICRON TECHNOLOGY, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 038954/0001 →
SECURITY INTEREST Recorded May 12, 2016
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 038669/0001 →