IP Library Granted Patent US 7,240,432
Granted Patent B2
US 7,240,432 · App. 11/147,167 · Granted Jul 10, 2007

Method of manufacturing a semiconductor device testing contactor having a circuit-side contact piece and test-board-side contact piece

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Quick Facts
Patent No.
US 7,240,432
App. No.
11/147,167
Granted
Jul 10, 2007
Kind
B2
Abstract

A contactor is placed between a semiconductor device and a test board. A contact electrode of the contactor electrically connects the semiconductor device to the test board. The contact electrode is formed of a conductive layer provided on an insulating substrate. The contact electrode comprises a first contact piece which contacts a terminal of the semiconductor device, a second contact piece which contacts an electrode of the test board, and a connecting portion which electrically connects the first contact piece and the second contact piece.

Claims (15)

1. A method of manufacturing a contactor where the contactor is placed between a semiconductor device and a test board so as to electrically connect said semiconductor device to said test board, said method comprising the steps of:

forming a conductive layer on a first surface of an insulating substrate;

processing said conductive layer into a contact electrode comprising a first contact piece, a second contact piece, and a connecting portion which electrically connects said first contact piece and said second contact piece; and

bending said first contact piece in a direction separating from said first surface of said insulating substrate at a predetermined angle and bending said second contact piece toward a second surface opposite to said first surface of said insulating substrate at a predetermined angle so that an end of said second contact piece protrudes from said second surface by passing through an opening formed in said insulating substrate.

2. The method as claimed in claim 1 , wherein the step of forming the conductive layer includes the step of applying a film material composed of a conductive material on a surface of said insulating substrate; and the step of processing includes the step of removing parts of said conductive layer applied on said insulating substrate so as to form said first contact piece, said second contact piece and said connecting portion.

3. The method as claimed in claim 1 , wherein the step of forming the conductive layer includes the step of depositing a conductive material on a surface of said insulating substrate so as to form said conductive layer; and the step of processing includes the step of removing parts of said conductive layer deposited on said insulating substrate so as to form said first contact piece, said second contact piece and said connecting portion.

4. The method as claimed in claim 1 , further comprising the step of forming the opening in said insulating substrate at a position where at least said second contact piece is formed.

5. The method as claimed in claim 1 , wherein at least one of said first contact piece and said second contact piece is one of a curved plane and a bent plane, and said method further comprising the step of bending said at least one of said first contact piece and said second contact piece, at a position where said connecting portion and said at least one of said first contact piece and said second contact piece meet, at a predetermined angle from said insulating substrate.

6. The method as claimed in claim 1 , further comprising the step of forming at least one surface layer on a surface of said conductive layer so as to change properties of said contact electrode.

7. The method as claimed in claim 1 , further comprising the step of forming a reinforcing material at a position where said connecting portion and each of said first contact piece and said second contact piece meet.

8. A method of manufacturing a contactor where the contactor is placed between a semiconductor device and a test board so as to electrically connect said semiconductor device to said test board, said method comprising the steps of:

processing parts of an insulating substrate into a first contact piece and a second contact piece;

forming a conductive layer on said first contact piece and said second contact piece and forming a part of said conductive layer into a connecting portion which electrically connects said first contact piece and said second contact piece; and

bending said first contact piece in a direction separating from a first surface of said insulating substrate at a predetermined angle and bending said second contact piece toward a second surface opposite said first surface of said insulating substrate at a predetermined angle so that an end of said second contact piece protrudes from said second surface by passing through an opening formed in said insulating substrate.

9. The method as claimed in claim 8 , wherein the step of processing includes the step of forming said opening in said insulating substrate so as to form at least said second contact piece.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 27, 2015
From: FUJITSU SEMICONDUCTOR LIMITED
To: SOCIONEXT INC.
Reel/Frame 035507/0612 →