Methods for fabricating a metal layer pattern
View Patent ↗Semiconductor devices and methods of fabricating the same are disclosed. An illustrated semiconductor device fabricating method includes forming a titanium and titanium-nitride (Ti/TiN) metal layer on a lower oxide layer; forming an aluminum metal layer on the Ti/TiN metal layer; forming an indium tin oxide (ITO) layer on the aluminum metal layer; and patterning the ITO layer, the aluminum metal layer, and the Ti/TiN metal layer by photolithography to form a metal layer pattern and to expose a surface of the lower oxide layer, thereby facilitating a process of filling inter-wiring spaces occurring between adjacent lines of a metal layer pattern by producing a metal layer pattern having a reduced aspect ratio.
1. A method of fabricating a semiconductor device comprising:
forming a titanium and titanium-nitride (Ti/TiN) metal layer above a lower oxide layer located above a semiconductor substrate;
forming an aluminum metal layer above the Ti/TiN metal layer;
forming an indium tin oxide (ITO) layer above the aluminum metal layer; and
patterning the ITO layer, the aluminum metal layer, and the Ti/TiN metal layer to form a metal layer pattern and to expose a surface of the lower oxide layer,
wherein the Ti/TiN metal layer, aluminum metal layer, and ITO layer are sequentially formed in a same deposition chamber.
2. A method as defined in claim 1 , further comprising forming an inter-metal dielectric layer on the metal layer pattern.
3. A method as defined in claim 2 , wherein the inter-metal dielectric layer is disposed between at least two adjacent lines of the metal layer pattern in a space above the exposed surface of the lower oxide layer.
4. A method as defined in claim 3 , wherein the inter-metal dielectric layer disposed between the at least two adjacent lines of metal layer pattern completely fills the space and leaves no void.
5. A method as defined in claim 3 , wherein the metal layer pattern has an aspect ratio determined by a height of the metal layer pattern divided by a width of the space.
6. A method as defined in claim 1 , wherein the Ti/TiN metal layer, the aluminum metal layer and the ITO layer are formed while the semiconductor substrate remains under constant atmospheric conditions.
7. A method as defined in claim 1 , wherein the Ti/TiN metal layer has a thickness of about 1,000˜20,000 Å.
8. A method as defined in claim 1 , wherein the Ti/TiN metal layer is formed by sputtering.
9. A method as defined in claim 1 , wherein the aluminum metal layer has a thickness of about 1,000˜20,000 Å.
10. A method as defined in claim 1 , wherein the aluminum metal layer is formed by sputtering.
11. A method as defined in claim 1 , wherein the ITO layer is formed by at least one of metal-organic chemical vapor deposition, RF sputtering, and reactive sputtering.
12. A method as defined in claim 1 , wherein the ITO layer has a composition of In x Sn y O z , where x=0.2˜0.3, y=0.2˜0.3, and z=0.4˜0.6.
13. A method as defined in claim 1 , wherein the ITO layer exhibits a refractive index (n) of about 1.0˜2.0 and an absorption coefficient (k) of about 0.1˜0.