MEMS teeter-totter apparatus with curved beam and method of manufacture

1. A teeter-totter apparatus, comprising:

at least one curved beam which pivots on a pivot point coupled to a surface of a substrate, and which is coupled to at least one moveable plate of a capacitor;

a proof mass coupled to one end of the curved beam;

at least one stationary structure coupled to the substrate which defines at least one stationary plate of the capacitor, wherein the moveable plate and the stationary plate are oriented perpendicular to a plane defined by the substrate surface.

2. The apparatus of claim 1 , wherein the curved beam rotates about an axis substantially parallel to the substrate surface in response to an acceleration in a direction substantially perpendicular to the substrate surface.

3. The apparatus of claim 2 , wherein the at least one moveable plate and the at least one stationary plate are defined by at least two sets of interdigitated fingers, each located near an end of the curved beam wherein the interdigitated fingers are configured to generate a signal representative of the acceleration based on a difference between the capacitance of one set of interdigitated fingers and the capacitance of the other set of interdigitated fingers.

4. The apparatus of claim 1 , wherein the curved beam comprises a stressed material.

5. The apparatus of claim 4 , wherein the stressed material is at least one of chrome and titanium.

6. The apparatus of claim 2 , wherein the at least one curved beam comprises two curved beams which define two sides of a frame, wherein the frame rotates about an axis substantially parallel to the substrate surface.

7. The apparatus of claim 6 , wherein the frame encloses at least one additional accelerometer, which is sensitive to an acceleration in a direction orthogonal to a direction of motion of the teeter-totter apparatus.

8. The apparatus of claim 2 , further comprising:

at least one damping plate coupled to the at least one curved beam, which damps a motion of the curved beam.

9. The apparatus of claim 2 , wherein the pivot point provides a restoring force which resists the pivoting of the curved beam about the pivot point.

10. The apparatus of claim 2 , further comprising at least one self-test structure, which exerts a force on the teeter-totter apparatus to test the functionality of the teeter-totter apparatus.

11. The apparatus of claim 2 , wherein the curved beam has a curvature resulting from texturing a surface of the beam.

12. The apparatus of claim 2 , wherein the stationary plate is electrically isolated from the moveable plate.

13. The apparatus of claim 12 , further comprising electrical connections made to the stationary plate and the moveable plate through vias made in the substrate.

14. The apparatus of claim 2 , wherein the teeter-totter apparatus is formed on a silicon-on-insulator wafer comprising a silicon device layer, an insulating layer, and a silicon handle layer.

15. A method for fabricating an apparatus on a substrate, comprising:

forming at least one curved beam which rotates about an axis substantially parallel to a substrate surface;

forming at least one moveable plate of a capacitor on the curved beam;

forming at least one stationary structure coupled to the substrate which defines at least one stationary plate of the capacitor, wherein the moveable plate and the stationary plate are oriented substantially perpendicularly to a plane defined by the substrate surface;

forming a proof mass on at least one end of the curved beam; and

forming electrical connections to the stationary plate and the moveable plate, which generate a signal indicative of an acceleration in a direction substantially perpendicular to the substrate surface, by detecting a rotation of the curved beam.

16. The method of claim 15 , further comprising forming at least one damping plate coupled to the at least one curved beam.

17. The method of claim 15 , wherein the substrate is a silicon-on-insulator wafer.

18. The method of claim 17 , wherein forming electrical connections comprises:

forming at least one via through a handle layer of the silicon-on-insulator wafer;

over-etching an insulating layer of the silicon-on-insulator wafer through the at least one via; and

depositing a conducting layer in the at least one via.

19. The method of claim 18 , further comprising:

coupling at least one wire to the conducting layer in the at least one via.

20. A method for measuring an acceleration in a direction substantially perpendicular to the surface of the substrate with the teeter-totter apparatus of claim 3 , comprising:

measuring a first capacitance from a first of the two sets of interdigitated fingers;

measuring a second capacitance from a second of the two sets of interdigitated fingers; and

subtracting the first capacitance from the second capacitance, to generate a differential signal indicative of the rotation of the curved beam about the axis.