System and method for controlling ion density and energy using modulated power signals

1 . A method of controlling ions in a sputtering system that includes at least one cathode, the method comprising:

generating a modulated power signal; and

providing the modulated power signal to the cathode.

2 . The method of claim 1 , wherein generating a modulated power signal comprises:

generating an amplitude-modulated power signal.

3 . The method of claim 1 , wherein generating a modulated power signal comprises:

generating an frequency-modulated power signal.

4 . The method of claim 1 , wherein generating a modulated power signal comprises:

generating an pulse-width modulated power signal.

5 . The method of claim 1 , wherein generating a modulated power signal comprises:

generating a pulse-amplitude modulated power signal.

6 . The method of claim 1 , further comprising:

Actively varying a characteristic of the modulated power signal while the sputtering system is sputtering to thereby impact film growth.

7 . The method of claim 1 , wherein the modulated power signal includes a DC signal.

8 . The method of claim 1 , wherein the modulated power signal includes an AC signal.

9 . The method of claim 1 , further comprising:

varying the modulation of the modulated power signal to increase ion density.

10 . The method of claim 1 , further comprising:

varying the modulation of the modulated power signal to decrease ion density.

11 . A method for controlling ion density in a sputtering system, the method comprising:

providing a power signal to the sputtering system;

varying at least one characteristic of the power signal to control ion density, wherein the characteristic includes at least one of amplitude, frequency, width, repetition rate, and position.

12 . A method for controlling ion density and sputtering rate in a sputtering system, the method comprising:

applying a high-frequency power signal to the cathode to thereby generate a first concentration of ions;

decreasing the frequency of the power signal applied to the cathode to thereby increase the sputtering rate and decrease the first concentration of ions around the cathode;

applying the high-frequency power signal to the cathode to thereby generate a second concentration of ions; and

decreasing the frequency of the power signal applied to the cathode to thereby increase the sputtering rate and decrease the second ion concentration of around the cathode.

13 . A method for controlling ion density and sputtering rate in a sputtering system, the method comprising:

applying a first pulse-width power signal to the cathode to thereby generate a first concentration of ions;

decreasing the pulse-width of the first pulse-width power signal applied to the cathode to thereby increase the sputtering rate and decrease the first concentration of ion around the cathode;

applying the first pulse-width power signal to the cathode to thereby generate a second concentration of ions; and

decreasing the pulse-width of the first pulse-width power signal applied to the cathode to thereby increase the sputtering rate and decrease the second concentration of ions around the cathode.

14 . A method for controlling ion density and sputtering rate in a sputtering system, the method comprising:

applying a high-amplitude power signal to the cathode to thereby generate a first concentration of ions;

decreasing the amplitude of the power signal applied to the cathode to thereby increase the sputtering rate and decrease the first concentration of ions around the cathode;

applying the high-amplitude power signal to the cathode to thereby generate a second concentration of ions; and

decreasing the amplitude of the power signal applied to the cathode to thereby increase the sputtering rate and decrease the second concentration of ions around the cathode.