Semiconductor device and method of fabricating the same
View Patent ↗A semiconductor device includes a substrate having a pair of first diffused regions, and a gate including an oxide film provided on the substrate, and a charge storage layer provided on the oxide film, the charge storage layer being an electrical insulator capable of storing charges in bit areas. The oxide film has first portions related to the bit areas and a second portion that is located between the bit areas and is thicker than the first potions. The first portions serve as tunneling oxide portions, while the second portion allows reduced tunneling.
1. A semiconductor device comprising:
a substrate having a pair of first diffused regions; and
a gate including an oxide film provided on the substrate, and a charge storage layer provided on the oxide film, the charge storage layer being an electrical insulator capable of storing charges in bit areas,
the oxide film having first portions related to the bit areas and a second portion that is located between the bit areas and is thicker than the first potions,
the first portions serving as tunneling oxide portions, while the second portion allows reduced tunneling.
2. The semiconductor device as claimed in claim 1 , wherein:
the first diffused regions selectively serve as a source and a drain in accordance with a condition for biasing; and
the pair of first diffused regions are symmetrically arranged at both ends of a channel.
3. The semiconductor device as claimed in claim 1 , wherein the substrate includes a threshold control region that controls threshold levels of the bit areas.
4. The semiconductor device as claimed in claim 1 , further comprising a second diffused region in which the pair of first diffused regions is located.
5. The semiconductor device as claimed in claim 1 , further comprising a second diffused region located between the pair of first diffused regions.
6. The semiconductor device as claimed in claim 1 , further comprising a second diffused region that is separate from the pair of first diffused regions.
7. The semiconductor device as claimed in claim 1 , further comprising a second diffused region that is separate from the pair of first diffused regions and is located at a central portion of the channel.
8. The semiconductor device as claimed in claim 7 , wherein the second diffused region extends vertically from a surface of the substrate.
9. The semiconductor device as claimed in claim 3 , wherein the threshold control region includes an ion-implanted region.
10. The semiconductor device as claimed in claim 1 , wherein the pair of first diffused regions has a buried bit line structure, and the semiconductor device comprises a plurality of pairs of first diffused regions.
11. The semiconductor device as claimed in claim 1 , wherein the substrate is a silicon substrate, and the oxide film is a silicon oxide film, the charge storage layer being a silicon nitride film.
12. The semiconductor device as claimed in claim 1 , wherein the gate has a MNOS (Metal-Nitride-Oxide-Semiconductor) or SONOS (Silicon-Oxide-Nitride-Oxide-Semiconductor) structure.
13. The semiconductor device as claimed in claim 4 , wherein the second diffused region contains a dopant of boron, and the first diffused regions contain a dopant of arsenide.