IP Library › Patent Application 11155209
Patent Application
App. No. 11/155,209

Reactor for producing reactive intermediates for low dielectric constant polymer thin films

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Quick Facts
Patent No.
US None
App. No.
11/155,209
Abstract

A reactor for forming a reactive intermediate for a transport polymerization process is disclosed, wherein the reactor includes an exterior unit having an inlet, an outlet, and an interior disposed between the inlet and the outlet; a heater body located in said interior, wherein the heater body is at least partially conductively insulated from said reactor; an energy source coupled outside said reactor for providing energy to said heater body via radiative heat transfer; and an interior surface located in the interior, wherein the interior surface is at least partially formed from a material M that reacts with at least one of X and Y to remove at least one of X and Y from the precursor thereby forming the reactive intermediate and at least one of a compound M a Y b and a compound M c X d .

Claims (37)

1 . A reactor for forming a reactive intermediate for a transport polymerization process from a precursor having a general formula of X m —Ar—(CZ′Z″Y) n , wherein X and Y are leaving groups and wherein Ar is an aromatic moiety, the reactor comprising:

an exterior unit having an inlet, an outlet, and an interior disposed between the inlet and the outlet, where precursors enter the reactor at the inlet, are converted to a reactive intermediates within the interior, and wherein the reactive intermediates exit at the outlet, and wherein the interior is configured to be under a vacuum for at least a duration;

an interior surface exposed to the interior, wherein the interior surface is at least partially formed from a material M that reacts with at least one of X and Y to remove at least one of X and Y from the precursor thereby forming the reactive intermediate and at least one of a compound M a Y b and a compound M c X d , wherein M is a metal selected from nickel, titanium, gold, iron, platinum, chromium, silver, cobalt, tungsten, zinc, copper, and alloys containing these metals;

a heater body located in said interior, wherein the heater body is substantially conductively insulated from said interior surface of said exterior unit; and

an energy source configured to provide energy to said heater body.

2 . The reactor of claim 1 wherein said heater body located in said interior of the reactor is at least partially conductively insulated from said reactor by a gap located between at least part of the heater body and said exterior unit.

3 . The reactor of claim 1 coupled to a vapor deposition system for depositing said reactive intermediates to a wafer.

4 . The reactor of claim 1 wherein said heater body comprises:

a shaft; and

a plurality of fins coupled to said shaft extending outward from said shaft.

5 . The reactor of claim 4 wherein at least two of said plurality of fins are arranged angularly about said shaft.

6 . The reactor of claim 5 wherein said at least two fins have thicknesses less than their height or width.

7 . The reactor of claim 5 wherein at least six fins are arranged angularly about said shaft with an angle of about 60 degrees between each of said six fins.

8 . The reactor of claim 5 wherein said at least two fins are axially offset along an axial length, and angularly offset from each other.

9 . The reactor of claim 8 wherein said at least two fins are substantially adjacent along an axial length, and angularly offset from each other.

10 . The reactor of claim 9 , said two fins are angularly offset by approximately 30 degrees.

11 . The reactor of claim 1 , wherein the heater body is substantially completely conductively insulated from the exterior unit.

12 . The reactor of claim 1 , wherein M reacts with the precursor to remove X from the precursor at a temperature below a temperature at which X is thermally dissociated from the precursor in the absence of M.

13 . The reactor of claim 1 , wherein M reacts with the precursor to remove Y from the precursor at a temperature below a temperature at which Y is thermally dissociated from the precursor in the absence of M.

14 . A reactor for forming a reactive intermediate for a transport polymerization process from a precursor having a general formula of X m —Ar—(CZ′Z″Y) n , wherein X and Y are leaving groups, wherein Ar is an aromatic moiety, the reactor comprising:

an exterior unit having an interior, an inlet and an outlet;

an inner core located in said interior of the reactor having a plurality of radial fins, and having a gap between at least some of said fins and said exterior unit, where said fins have a smaller surface area blocking a flow path in said reactor compared with a surface area parallel to said flow path; and

an interior surface located in said interior, wherein the interior surface is at least partially formed from a metal selected from nickel, titanium, gold, iron, platinum, chromium, silver, cobalt, tungsten, zinc, copper, and alloys containing these metals.

15 . The reactor of claim 14 , wherein M reacts with the precursor to remove X from the precursor at a temperature below a temperature at which X is thermally dissociated from the precursor in the absence of M.

16 . The reactor of claim 14 , wherein M reacts with the precursor to remove Y from the precursor at a temperature below a temperature at which Y is thermally dissociated from the precursor in the absence of M.

17 . The reactor of claim 14 wherein an angle between adjacent radial fins is approximately 60 degrees.

18 . The reactor of claim 14 wherein said plurality of fins includes at least first set of fins and a second set of fins axially offset from the first set of fins.

19 . The reactor of claim 14 , wherein substantially all of the fins are spaced from the exterior unit.

20 . A reactor for forming a reactive intermediate from a precursor having a general formula of X m —Ar—(CZ′Z″Y) n , wherein X and Y are leaving groups, wherein Ar is an aromatic moiety and wherein the reactive intermediate has at least two free radicals, the reactor comprising:

an inlet for admitting a flow of the precursor into the reactor; and

an interior having a surface at least partially formed from a material M that reacts with at least one of X and Y to remove at least one of X and Y from the precursor to form the reactive intermediate and at least one of a compound M a Y b and a compound M c X d ;

an outlet for admitting a flow of the reactive intermediate out of the reactor,

wherein the reactor is configured to be coupled to a reducing gas source to provide a reducing gas to the reactor to reduce at least one of the compound M a Y b and the compound M c X d in the reactor to M to thereby regenerate the reactor.

21 . The reactor of claim 20 , wherein the reducing gas source includes hydrogen gas.

22 . The reactor of claim 20 , wherein the reducing gas reduces the compound M a Y b to M at a temperature below the melting point of M a Y b .

23 . The reactor of claim 20 , wherein the reducing gas reduces the compound M c X d to M at a temperature below the melting point of M c X d .

24 . The reactor of claim 20 , further comprising the reducing gas source coupled to the reactor.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 2, 2006
From: INTERNATIONAL DISPLAY SYSTEMS, INC.
To: DIELECTRIC SYSTEMS, INC.
Reel/Frame 018472/0772 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 26, 2005
From: DIELECTRIC SYSTEMS, INC.
To: INTERNATIONAL DISPLAY SYSTEMS, INC.
Reel/Frame 016687/0955 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 16, 2005
From: LEE, CHUNG J.; KUMAR, ATUL; CHEN, CHIEH
To: DIELECTRIC SYSTEMS, INC.
Reel/Frame 016708/0967 →