Semiconductor wafer inspection system

1. An in-line analysis method for identifying a chemical defect present on a surface of a semiconductor wafer being processed in a clean room for production, comprising the steps of:

providing an in-line semiconductor wafer processing system including a semiconductor wafer scanning system for analyzing chemical defects;

providing a semiconductor wafer having a surface;

fixing the semiconductor wafer upon a wafer stage of the semiconductor wafer scanning system;

providing a non-vibrating contact potential difference sensor;

engaging a positioning mechanism in communication with the non-vibrating contact potential sensor whereby the non-vibrating contact potential difference sensor is positionable in relation to the wafer stage via the positioning mechanism and the non-vibrating contact potential difference sensor is positioned in the in-line semiconductor wafer processing system;

continuously radially scanning the non-vibrating contact potential difference sensor about a circumferential track of the semiconductor wafer;

generating contact potential difference track data from the non-vibrating contact potential difference sensor during at least the radial scanning of the semiconductor wafer relative to the sensor, the track data being representative of changes along the circumferential track of contact potential difference of the semiconductor wafer surface relative to the non-vibrating contact potential difference sensor;

outputting the track data for the track to a computer system for determining whether the track was a last track;

assembling the contact potential difference track data for each scanned track to form representative contact potential difference track data representative of the semiconductor wafer surface;

processing the non-vibrating contact potential difference track data to automatically detect a pattern that represents a chemical defect or chemical non uniformity present on the semiconductor wafer surface;

processing the pattern to automatically identify the category of defect or non uniformity detected; and

outputting a large area spatial image, having a resolution of at least about 60 microns, of the semiconductor wafer surface, illustrating spatial location of the chemical defect or chemical non uniformity on the semiconductor wafer surface.

2. The method as defined in claim 1 where the semiconductor wafer includes at least one additional layer disposed on a base silicon wafer.

3. A method for identifying a defect present on a surface of a semiconductor wafer being processed for production, comprising the steps of:

providing a semiconductor wafer processing system including a semiconductor wafer scanning system for analyzing defects;

providing a semiconductor wafer having a surface;

fixing the semiconductor wafer upon a wafer stage of the semiconductor wafer scanning system;

providing a contact potential difference sensor;

engaging a positioning mechanism in communication with the contact potential sensor whereby the contact potential difference sensor is positionable in relation to the wafer stage via the positioning mechanism and the contact potential difference sensor is positioned in the in-line semiconductor wafer processing system;

continuously radially scanning the contact potential difference sensor about a circumferential track of the semiconductor wafer;

generating contact potential difference track data from the contact potential difference sensor during at least the radial scanning of the semiconductor wafer relative to the sensor with the track data being representative of changes along the circumferential track of contact potential difference of the semiconductor wafer surface relative to the contact potential difference sensor;

processing the contact potential difference track data for selected ones of the scanned track to form representative contact potential difference track data representative of the semiconductor wafer surface; and

processing the contact potential difference track data to automatically detect a pattern that represents a defect.

4. The method as defined in claim 2 , further including the steps of:

displaying the contact potential difference track data on a display to generate a characteristic wafer image; and

comparing the characteristic wafer image with standard images of defects to identify a category of the defect present on the surface of the semiconductor wafer.

5. The method as defined in claim 3 wherein the standard images of defects are selected from the group of a scratch, a metal contaminated wafer image, an alcohol contaminated wafer image, a vacuum pick up damaged wafer image, a latex contaminated wafer image, a chemical contamination and a human fingerprint contaminated wafer image.

6. The method as defined in claim 2 , wherein the step of processing the sensor data includes processing the track data into an image that is displayed to the user for evaluation by the user.

7. The method as defined in claim 2 wherein the step of processing the track data includes automatically processing the track data to identify the category of defect detected.

8. The method as defined in claim 2 wherein the step of continuously radially scanning the semiconductor wafer comprises spinning the wafer.

9. A method of detecting at least one of chemical, physical and electrical non-uniformities on a wafer surface comprising the steps of:

providing a wafer having a surface;

providing a contact potential difference sensor having a probe tip;

scanning the wafer surface laterally relative to the contact potential difference sensor;

generating sensor data representative of changes in the contact potential difference between the sensor probe tip and the wafer surface as the sensor probe tip scans laterally across different locations on the wafer surface; and

processing the contact potential difference sensor data to detect a pattern that represents a defect.

10. The method as defined in claim 9 further comprising the use of the sensor data to generate a graphical display of the wafer surface including a visual indication of the location of the defect.

11. The method as defined in claim 9 further comprising the step of generating an image representative of the change in the contact potential difference at different locations on the wafer surface.

12. The method as defined in claim 9 where the change in contact potential difference is representative of a change in copper states on the wafer surface.

13. The method as defined in claim 9 where the wafer is selected from the group of silicon and glass.

14. The method as defined in claim 9 where the change in contact potential difference is representative of changes in the roughness of the wafer surface.

15. The method as defined in claim 9 where the non-vibrating contact potential difference sensor is used to detect a mechanical structure on the edge of the wafer.

16. A method of detecting a chemical contaminant on a semiconductor wafer surface during processing of a semiconductor wafer, comprising the steps of:

providing a semiconductor wafer having a surface;

providing a semiconductor wafer processing system including a semiconductor wafer scanning system;

positioning the semiconductor wafer in the semiconductor wafer scanning system;

positioning a contact potential difference sensor in operational relationship with the semiconductor wafer;

moving the contact potential difference sensor and the semiconductor wafer relative to each other in a lateral scanning manner;

generating from the lateral movement of the semiconductor wafer relative to the contact potential difference probe a signal output representative of the changes in contact potential between the contact potential difference sensor and the semiconductor wafer as the relative lateral motion occurs, thereby providing scanning data representative of the changes in the contact potential difference across the semiconductor wafer relative to the contact potential difference sensor;

processing the scanning data to locate areas of high contact potential difference variability characteristic of changes in a chemical state of the semiconductor wafer; and

comparing the scanning data to known contact potential difference data sets to determine whether the semiconductor wafer contains any chemical contaminant.

17. The method as defined in claim 16 wherein the step of processing comprises performing a pattern recognition methodology to determine a category of the chemical contaminant.

18. The method as defined in claim 17 further including the step of processing the wafer with a treatment for ameliorating the category of the chemical contaminants identified.

19. The method as defined in claim 16 further including the step of performing a supplementary analysis of the scanning data.

20. The method as defined in claim 19 wherein the step of performing a supplementary analysis of the scanning data includes analyzing the chemical contaminants.

21. The method as defined in claim 16 further including the step of applying a computerized decisional methodology to reject selected ones of the semiconductor wafers having selected ones of the chemical contaminant.

22. A system for in-line semiconductor wafer processing comprising:

a semiconductor wafer processing system to identify a defect on a semiconductor wafer, the processing system including a wafer scanning system;

a semiconductor wafer;

a semiconductor wafer stage of the wafer scanning system for receiving the semiconductor wafer, the semiconductor wafer stage being rotatable and engageable with the semiconductor wafer;

a contact potential difference semiconductor sensor system having a contact potential difference probe;

a positioning assembly in communication with the contact potential difference probe whereby the contact potential difference probe can be positioned relative to the semiconductor wafer secured on the semiconductor wafer stage;

a scanning assembly to laterally scan the semiconductor wafer relative to the contact potential difference probe;

the contact potential difference probe adapted to produce a signal characteristic of the defect on the semiconductor wafer in response to a change in the contact potential difference generated by relative lateral scanning motion of the contact potential difference probe and the semiconductor wafer;

a computer in communication with the contact potential difference probe of the scanning system, whereby relative contact potential difference data is output by the contact potential difference probe to the computer; and

a visual image characteristic of the defect and its spatial distribution on the semiconductor wafer generated by the computer and representative of the contact potential difference data.

23. The system as defined in claim 22 further including a data base of contact potential difference data for standard defects, the computer including computer software which can analyze the relative contact potential difference data and compare with the standard defect contact potential data to generate identification information about the type of defect and the spatial distribution present on the surface of the semiconductor wafer.

24. The system as defined in claim 22 further including a transport device to move the semiconductor wafer to a secondary processing system for remediation.

25. The system as defined in claim 22 further including a plurality of contact potential difference probes with one of the probes disposed immediately downstream from each of a plurality of cleaning systems, thereby enabling monitoring of the semiconductor wafer after processed at each of the cleaning systems.

26. The system as defined in claim 25 further including a downstream processing system for determining time necessary to clean the semiconductor wafer.

27. The system as defined in claim 22 that includes a system for automatically determining type of chemical contaminants on the semiconductor wafer and modifying cleaning parameters to improve a state of chemical cleanliness for the semiconductor wafer.

28. The system as defined in claim 22 further including computer software executed by the computer analyzing the contact potential difference data to determine defects selected from the group of mechanical defects, chemical contaminants, thin dielectric films and electrical non-uniformities.