Method of fabricating a semiconductor device

1. A method of fabricating a semiconductor device comprising:

forming a first interconnect on a semiconductor substrate;

forming a film-to-be-etched on said first interconnect;

forming a via hole in said film-to-be etched;

forming an organic film on said film-to-be-etched;

forming, on said organic film, an intermediate film by a two frequency chemical vapor deposition process, at a temperature of 100° C. or above to 300° C. or below, using a compound expressed by the general formula (1) below;

forming a resist film having a pattern for an opening on said intermediate film;

etching said film-to-be-etched by utilizing said organic film, said intermediate film and said resist film to form a trench in said film-to-be etched; and

forming a second interconnect connected to said first interconnect by filling said trench and said via hole with metal:

where each of R 1 , R 2 , R 3 and R 4 independently expresses a carbon-containing group or a hydrogen atom, excluding the case where all of R 1 to R 4 are hydrogen atoms.

2. The method of fabricating a semiconductor device according to claim 1 , wherein in said compound in said forming said intermediate film, each of R 1 , R 2 , R 3 and R 4 independently expresses a carbon-containing group.

3. The method of fabricating a semiconductor device according to claim 2 , wherein said carbon-containing group is an alkyl group having a number of carbon atoms of 1 to 6.

4. The method of fabricating a semiconductor device according to claim 2 , wherein an oxidative gas is additionally used in forming said intermediate film.

5. The method of fabricating a semiconductor device according to claim 1 , wherein said carbon-containing group is an alkyl group having a number of carbon atoms of 1 to 6.

6. The method of fabricating a semiconductor device according to claim 5 , wherein an oxidative gas is additionally used in forming said intermediate film.

7. The method of fabricating a semiconductor device according to claim 1 , wherein TEOS (tetraethyl orthosilicate) is used in forming said intermediate film.

8. The method of fabricating a semiconductor device according to claim 7 , wherein an oxidative gas is additionally used in forming said intermediate film.

9. The method of fabricating a semiconductor device according to claim 7 , wherein said resist film is composed of a chemical amplification resist.

10. The method of fabricating a semiconductor device according to claim 7 , wherein in said forming said intermediate film, said intermediate film is formed by the two-frequency plasma chemical vapor deposition process using one frequency of 1 MHz or below.

11. The method of fabricating a semiconductor device according to claim 1 , wherein an oxidative gas is additionally used in forming said intermediate film.

12. The method of fabricating a semiconductor device according to claim 1 , wherein said resist film is composed of a chemical amplification resist.

13. The method of fabricating a semiconductor device according to claim 1 , further comprising, before forming said intermediate film, forming an anti-reflection film on said organic film; and wherein said intermediate film is formed on said anti-reflection film in said forming said intermediate film.

14. The method of fabricating a semiconductor device according to claim 13 , wherein anti-reflection films are respectively formed on both the organic film and the intermediate film.

15. The method of fabricating a semiconductor device according to claim 1 , further comprising,

before forming said resist film, forming an anti-reflection film on said intermediate film; and wherein said resist film is formed on said anti-reflection film in said forming said resist film.

16. The method of fabricating a semiconductor device according to claim 1 , wherein said intermediate film is formed to have compressive stress.

17. The method of fabricating a semiconductor device according to claim 1 , wherein said film-to-be-etched includes a porous film having a dielectric constant of 2.7 or below.

18. The method of fabricating a semiconductor device according to claim 1 , wherein the temperature is 200° C. to 300° C.

19. The method of fabricating a semiconductor device according to claim 1 , wherein the chemical vapor deposition process is performed at two frequencies of 13.56 MHz and approximately 500 kHz.

20. The method of fabricating a semiconductor device according to claim 1 , wherein the intermediate film has a compressive stress of 50 MPa.

21. The method of fabricating a semiconductor device according to claim 1 , wherein the two frequencies include a higher frequency and a lower frequency.

22. The method of fabricating a semiconductor device according to claim 1 , wherein said organic film is a resist film.

23. A method of fabricating a semiconductor device comprising:

forming a first interconnect on a semiconductor substrate;

forming a film-to-be-etched on said first interconnect;

forming a first organic film on said film-to-be-etched;

forming, on said first organic film, a first intermediate film by a two frequency chemical vapor deposition process, at a temperature of 100° C. or above to less than 300° C., using a compound expressed by the general formula (I) below;

forming a first resist film having a pattern for a first opening on said first intermediate film;

etching said film-to-be-etched by utilizing said first organic film, said first intermediate film and said first resist film to form a via hole in said film-to-be-etched;

removing said first organic film, said first intermediate film and said first resist film;

forming a second organic film on said film-to-be-etched with burring said via hole with said second organic film;

forming, on said second organic film, a second intermediate film by a two frequency chemical vapor deposition process, at a temperature of 100° C. or above to 300° C. or below, using a compound expressed by the general formula (I) below;

forming a second resist film having a pattern for a second opening on said second intermediate film;

etching said film-to-be-etched by using said second organic film, said second intermediate film and said second resist film to form a trench in said film-to-be-etched; and

forming a second interconnect connected to said first interconnect by filling said trench and said via hole with metal:

where each of R 1 , R 2 , R 3 and R 4 independently expresses a carbon-containing group or a hydrogen atom, excluding the case where all of R 1 to R 4 are hydrogen atoms.

24. The method of fabricating a semiconductor device according to claim 23 , wherein the two frequencies include a higher frequency and a lower frequency.

25. The method of fabricating a semiconductor device according to claim 23 , wherein the two frequency chemical vapor deposition process is performed at 13.56 MHz and approximately 500 kHz.

26. The method of fabricating a semiconductor device according to claim 23 , wherein said organic film is a resist film.

27. A method of fabricating a semiconductor device comprising:

forming a first interconnect on a semiconductor substrate;

forming a film-to-be-etched on said first interconnect;

forming an organic film on said film-to-be-etched;

forming, on said organic film, an intermediate film by a two frequency chemical vapor deposition process, at a temperature of 100° C. or above to 300° C. or below, using a compound expressed by the general formula (1) below;

forming a resist film having a pattern for an opening on said intermediate film;

etching said film-to-be-etched by utilizing said organic film, said intermediate film and said resist film to form a via hole in said film-to-be etched;

forming a trench on said via hole in said film-to-be-etched; and

forming a second interconnect connected to said first interconnect by filling said trench and said via hole with metal:

where each of R 1 , R 2 , R 3 and R 4 independently expresses a carbon-containing group or a hydrogen atom, excluding the case where all of R 1 to R 4 are hydrogen atoms.

28. The method of fabricating a semiconductor device according to claim 27 , wherein said organic film is a resist film.