Method of fabricating semiconductor integrated circuits
View Patent ↗A method of fabricating semiconductor integrated circuits includes (1) providing a spin-on tool comprising a rotatable platen for holding and spinning a wafer disposed thereon, a fluid supply system for providing spin-on solution onto the wafer, and a detector fixed in a position above the wafer, wherein the wafer has a radius R; (2) spin-on coating the wafer by depositing the spin-on solution onto surface of the wafer from its center and spinning-off to leave a spin coat material layer; and (3) spinning the wafer and scanning the spin coat material layer by impinging an incident light beam emanated from the fixed detector and detecting a reflected light beam.
1. A method of fabricating semiconductor integrated circuits comprising:
providing a spin-on tool comprising a rotatable platen for holding and spinning a wafer disposed thereon, a fluid supply system for providing spin-on solution onto said wafer, and a detector fixed in a position above said wafer, wherein said wafer has a radius R;
spin-on coating said wafer by depositing said spin-on solution onto surface of said wafer from its center and spinning-off to leave a spin coat material layer; and
spinning said wafer and scanning said spin coat material layer by impinging an incident light beam emanated from said fixed detector and detecting a reflected light beam.
2. The method according to claim 1 wherein said incident light beam impinges within a belt area ranging from radius R/2 to a perimeter that is about 1 millimeter from said wafer's rim.
3. The method according to claim 1 wherein said spin-on solution comprises photoresist.
4. The method according to claim 1 wherein said spin coat material layer comprises an anti-reflection coating.
5. The method according to claim 1 further comprising a step of baking said spin coat material layer prior to the step of scanning said spin coat material layer.
6. The method according to claim 1 wherein said spin coat material layer is a photoresist layer and said incident light beam has a light intensity that is lower than a threshold exposure energy of said photoresist layer.
7. A method of fabricating semiconductor integrated circuits comprising:
providing a spin-on tool comprising a rotatable platen for holding and spinning a wafer disposed thereon, a fluid supply system for providing spin-on solution onto said wafer, and a detector fixed in a position above said wafer, wherein said wafer has a radius R;
spin-on coating said wafer by depositing said spin-on solution onto surface of said wafer from its center and spinning-off to leave a spin coat material layer; and
spinning said wafer and assessing surface uniformity of said spin coat material layer by scanning said spin coat material layer using said fixed detector.