Pixel structure for vertical emissive- reflective display

1. A pixel structure for a vertical emissive-reflective (emi-flective) display, comprising:

a first transistor, having a gate, a source, and a drain, wherein the gate and the source of the first transistor are respectively coupled to a first scan line and a first data line;

a second transistor, having a gate, a source, and a drain, wherein the gate of the second transistor is coupled to the drain of the first transistor;

a first storage capacitor, having one end coupled to the gate of the second transistor, and another end coupled to the source of the second transistor;

a self-light emitting display unit, having an anode, a self-light emitting layer and a cathode, wherein the anode is coupled to the drain of the second transistor;

a third transistor, having a gate, a source, and a drain, wherein the gate and the source of the third transistor are respectively coupled to a second scan line and a second data line;

a second storage capacitor, having one end coupled, to the drain of the third transistor, and another end coupled to a common voltage; and

a reflective-type display unit, having one end coupled to the drain of the third transistor and the cathode of the organic emitting unit, and another end coupled to the common voltage, wherein when operated in a self-light emitting display mode, the reflective-type display unit is turned off through the second scan line, and when operated in a reflective-type display mode, the self-light emitting display unit is turned off through the first scan line.

2. The pixel structure of claim 1 , wherein the first, the second, and the third transistors are thin-film transistors.

3. The pixel structure of claim 2 , wherein the thin-film transistor is selected from a group consisting of an organic thin-film transistor, a low-temperature polysilicon thin-film transistor, an amorphous thin-film transistor, a silicon-based thin-film transistor, a micro-silicon thin-film transistor (μ-Si-TFT) and a transparent thin-film transistor.

4. The pixel structure of claim 1 , wherein the other end of the first storage capacitor is coupled to an operation voltage or a ground voltage.

5. The pixel structure of claim 1 , wherein the self-light emitting display unit is an organic light emitting diode.

6. The pixel structure of claim 5 , wherein the organic light emitting diode is an inverted-type organic light emitting diode.

7. The pixel structure of claim 1 , wherein the reflective-type display unit is a liquid crystal display unit.

8. The pixel structure of claim 1 , wherein the first data line and the second data lines are further coupled to a data line through a switch.

9. The pixel structure of claim 8 , wherein the switch is a transistor.

10. The pixel structure of claim 1 , wherein the first and the second scan lines are further coupled to a scan line through a switch.

11. The pixel structure of claim 10 , wherein the switch is a transistor.