Reticle and optical proximity correction method
View Patent ↗An OPC method includes providing a primary mask having a primary pattern, forming an assist mask having a correction pattern substantially complementary to the primary pattern, and forming a reticle by overlapping the primary mask and the assist mask. The light transmittance of the correction pattern is adjustable so as to equalize the light intensity distribution of the primary mask.
1. A reticle comprising:
a primary mask having a primary pattern; and
an assist mask having a correction pattern substantially complementary to the primary pattern, wherein the primary mask and the assist mask are overlapping in a vertical direction, and the primary pattern of the primary mask and the correction pattern of the assist mask are spaced in the vertical direction with a gap therebetween.
2. The reticle of claim 1 , wherein a material of the correction pattern comprises a halftone material.
3. The reticle of claim 2 , wherein the halftone material comprises molybdenum silicide.
4. The reticle of claim 2 , wherein the correction pattern comprises a dot pattern or a hole pattern.
5. The reticle of claim 1 , wherein the assist mask is a pellicle.
6. The reticle of claim 5 , wherein a material of the correction pattern comprises a dye material.
7. The reticle of claim 1 , wherein the assist mask is positioned below or above the primary mask.
8. An optical proximity correction (OPC) method comprising:
providing a primary mask having a primary pattern;
forming an assist mask having a correction pattern substantially complementary to the primary pattern; and
forming a reticle by overlapping the primary mask and the assist mask, wherein the primary mask and the assist mask are overlapping in a vertical direction, and the primary pattern of the primary mask and the correction pattern of the assist mask are spaced in the vertical direction with a gap therebetween;
wherein a light transmittance of the correction pattern is adjustable so as to equalize a light intensity distribution of the primary mask.
9. The OPC method of claim 8 , wherein a material of the correction pattern comprises a halftone material.
10. The OPC method of claim 9 , wherein the light transmittance of the correction pattern is adjusted by varying a thickness of the halftone material.
11. The OPC method of claim 9 , wherein the halftone material comprises molybdenum silicide.
12. The OPC method of claim 8 , wherein the correction pattern comprises a dot pattern or a hole pattern, and the light transmittance of the correction pattern is adjusted by tuning a density of the dot or the hole pattern.
13. The OPC method of claim 8 , wherein a material of the correction pattern comprises a dye material, and the light transmittance of the correction pattern is adjusted by changing a concentration of the dye material.
14. The OPC method of claim 8 , wherein the OPC is achieved by changing the gap between the primary mask and the assist mask.
15. The OPC method of claim 8 , wherein the assist mask is a pellicle.
16. The OPC method of claim 8 , wherein the correction pattern of the assist mask is obtained by a convolution process.