Interconnect structure
View Patent ↗An interconnect structure is described, disposed on a substrate with a conductive part thereon and including a dielectric layer, a composite plug and a conductive line. The dielectric layer is disposed on the substrate covering the conductive part. The composite plug is disposed in the dielectric layer electrically connecting with the conductive part, and includes a first plug and a second plug on the first plug, wherein the material or the critical dimension of the second plug is different from that of the first plug. The conductive line is disposed on the dielectric layer electrically connecting with the composite plug.
1. An interconnect structure, disposed on a substrate with a conductive part thereon and comprising:
a dielectric layer on the substrate, covering the conductive part;
a composite contact plug or via plug in the dielectric layer comprising:
a first contact plug or via plug extending vertically; and
a second contact plug or via plug, extending vertically, directly on the first contact plug or via plug,
wherein a top portion of the first contact plug or via plug and a bottom portion of the second contact plug or via plug are different in critical dimension, the first contact plug or via plug is disposed just above the conductive part and a bottom surface of the first contact plug or via plug electrically connects with the conductive part;
a first barrier layer disposed between the first contact plug or via plug and the second first contact plug or via plug; and
a conductive line on the dielectric layer, electrically connecting with the composite contact plug or via plug.
2. The interconnect structure of claim 1 , wherein an aspect ratio of the first contact plug or via plug is no more than 3.
3. The interconnect structure of claim 1 , wherein the first contact plug or via plug comprises a material selected from the group consisting of Cu, W, Al, Mo, Au, Pt and alloys thereof.
4. The interconnect structure of claim 1 , wherein the second contact plug or via plug comprises a material selected from the group consisting of Cu, W, Al, Mo, Au, Pt and alloys thereof.
5. The interconnect structure of claim 1 , wherein the dielectric layer comprises a lower sub-layer and an upper sub-layer, and the first contact plug or via plug is disposed in the lower sub-layer and the second contact plug or via plug in the upper sub-layer.
6. The interconnect structure of claim 5 , wherein the upper sub-layer comprises a low-k material.
7. The interconnect structure of claim 5 , further comprising a protective layer between the lower sub-layer and the upper sub-layer of the dielectric layer.
8. The interconnect structure of claim 7 , wherein the protective layer comprises SiN, SiC, SiON or SiCN.
9. The interconnect structure of claim 1 , further comprising a second barrier layer between the composite contact plug or via plug and each of the dielectric layer.
10. The interconnect structure of claim 9 , wherein the first and the second barrier layers comprise a material selected from the group consisting of Ti, TiN, Ta, TaN, W, WN and Ti—W alloy respectively.
11. The interconnect structure of claim 1 , wherein the conductive part comprises a doped region, a gate, a combination of a doped region and a gate, or a conductive line.
12. An interconnect structure, disposed on a substrate with a doped region thereon and comprising:
a dielectric layer on the substrate, covering the doped region;
a first contact plug or via plug, extending vertically, in the dielectric layer, having a bottom surface electrically connecting with the doped region; and
a dual damascene structure in the dielectric layer, electrically connecting with the first contact plug or via plug, and comprising
a second contact plug or via plug, extending vertically, directly on the first contact plug or via plug including an interface therebetween; and
a conductive line on second contact plug or via plug without an interface therebetween,
wherein a top portion of the first contact plug or via plug and a bottom portion of the second contact plug or via plug are different in critical dimension.
13. The interconnect structure of claim 12 , wherein a barrier layer between the first contact plug or via plug and the second contact plug or via plug.