Semiconductor device and source voltage control method
View Patent ↗The precharge circuit is provided for precharging, before programming the data, the voltage of the source line ARVSS commonly connected to the memory cells provided in the same sector. The voltage of the source line ARVSS of the memory cell MC is precharged before programming the data, and the voltage of the source line ARVSS of the memory cell MC is not lowered at the time of programming the data, even if the data programming period is shortened. It is thus possible to prevent the leak current during the programming and program the data into the memory cell MC optimally.
1. A semiconductor device comprising:
a memory cell; and
a precharge circuit that precharges a source line connected to the memory cell before the memory cell is programmed, wherein the precharge circuit includes a circuit that compares a reference voltage with a voltage of a common source line selectively connected to one of source lines associated with sectors, and precharges the common source line to a given constant level.
2. A semiconductor device comprising:
a memory cell; and
a precharge circuit that precharges a source line connected to the memory cell before the memory cell is programmed, wherein the precharge circuit includes a circuit that compares a reference voltage with a voltage of an interconnection line via which the source line is connected to the precharge circuit, and controls the source line at a given constant level.
3. The semiconductor device as claimed in claim 1 further comprising a clamp circuit, wherein the clamp circuit compares a reference voltage with a voltage of a common source line selectively connected to one of source lines associated with sectors, and precharges the common source line to a given constant level.
4. The semiconductor device as claimed in claim 2 further comprising a clamp circuit, wherein the clamp circuit compares a reference voltage with a voltage of an interconnection line via which the source line is connected to the precharge circuit, and controls the source line at a given constant level.
5. A semiconductor device comprising:
a memory cell; and
a precharge circuit that precharges a source line connected to the memory cell before the memory cell is programmed,
further comprising a resistor via which wherein the source line connected to the memory cell that is selected at the time of programming is grounded.
6. The semiconductor device as claimed in claim 1 , wherein the memory cell has a floating gate made of polysilicon in which electrons are stored.