Photo mask and semiconductor device fabricated using the same
A photo mask and a semiconductor device fabricated using the same is disclosed. The photo mask to form a mask pattern defining a STAR gate region includes a transparent substrate, and a light-shielding pattern defining a zigzag W-STAR gate region, wherein a waved portion of the light-shielding pattern partially overlaps a gate region and a storage node contact region of an active region disposed on a semiconductor substrate. The semiconductor device includes an active region and a device isolation region defining the active region disposed in a semiconductor substrate, a gate electrode, wherein a line width of the gate electrode in the active region is greater than that in the device isolation region, and a zigzag W-STAR gate region, wherein the waved portion of the zigzag W-STAR gate region partially overlaps the gate region and the storage node contact region in the active region.
1. A semiconductor device, comprising
an active region and a device isolation region defining the active region disposed in a semiconductor substrate;
a gate electrode, wherein a line width of the gate electrode in the active region is greater than a line width of the gate electrode in the device isolation region; and
a zigzag waved step asymmetry recess region formed under the gate electrode,
wherein a waved portion of the zigzag waved step asymmetry recess region partially overlaps the gate electrode and a storage node contact region in the active region,
wherein the zigzag waved step asymmetry recess region is not formed in the device isolation region.
2. The semiconductor device according to claim 1 , wherein a depth of the waved step asymmetry recess region ranges from 400 Å to 700 Å.
3. The semiconductor device according to claim 1 , wherein an interior angle of the waved step asymmetry recess region ranges from 90° to 140°.