Method for forming barrier layer of semiconductor device
A method for forming a barrier layer of a semiconductor device is disclosed, to improve the advantageous characteristics of device by obtaining the uniformity on depositing a barrier layer eve in case an etching profile is not in shape of the vertical, which includes the steps of loading a wafer having a line pattern layer for a metal line on a wafer stage of a deposition equipment; forming a diffusion barrier layer on the line pattern layer in state of rotating the wafer stage; and forming a seed metal layer, wherein the seed metal layer serves as a seed when forming a main line layer on the diffusion barrier layer.
1 . A method for forming a barrier layer of a semiconductor device comprising:
loading a wafer having a line pattern layer for a metal line on a wafer stage of a deposition equipment;
forming a diffusion barrier layer on the line pattern layer in state of rotating the wafer stage; and
forming a seed metal layer, wherein the seed metal layer serves as a seed when forming a main line layer on the diffusion barrier layer.
2 . The method of claim 1 , wherein a central axis of the wafer is corresponding to a rotation axis of the wafer stage when forming the diffusion barrier layer.
3 . The method of claim 1 , wherein a central axis of the wafer is not corresponding to a rotation axis of the wafer stage when forming the diffusion barrier layer.
4 . The method of claim 1 , wherein the wafer is rotated to any one direction of the left and right sides, or to both the left and right sides.