Patent Assignment
Reel/Frame 017829/0911
Corrective Assignment to Correct the Assignor Previously Recorded on Reel 017654 Frame 0078. Assignor(S) Hereby Confirms the Assignor Should Be "Dongbuanam Semiconductor Inc.".
Recorded: 2006-06-22
Pages: 18
Assignor
DONGBUANAM SEMICONDUCTOR INC.
Executed: 2006-03-28
Assignee
DONGBU ELECTRONICS CO., LTD.
891-10 DAECHI-DONG, KANGNAM-KU, SEOUL, KOREA, REPUBLIC OF
Covered Properties
(111)
Semiconductor Device and Fabrication Method Thereof
Semiconductor Device and Method for Fabricating the Same
Cmos Image Sensors and Methods for Fabricating the Same
Cmos Image Sensor and Method for Fabricating the Same
Cmos Image Sensor and Method for Fabricating the Same
Methods of Fabricating Semiconductor Devices Having Salicide
Isolation Methods in Semiconductor Devices
Semiconductor Device Having a Graded Ldd Region and Fabricating Method Thereof
Semiconductor device and fabricating method thereof
Application:
11/021,406 →
Publication:
US 2005/0179067
Test patterns for semiconductor devices and methods of fabricating the same
Application:
11/021,428 →
Publication:
US 2005/0139874
Circuits for Transistor Testing
Image sensor
Application:
11/021,616 →
Publication:
US 2005/0141104
Semiconductor Device and Method for Fabricating the Same
Method of Forming a Shallow Trench Isolation Structure in a Semiconductor Device
Method of Fabricating a Fin Field Effect Transistor
Semiconductor Device and Method for Fabricating the Same
Isolation methods in semiconductor devices
Application:
11/024,636 →
Publication:
US 2005/0142734
Etching methods to prevent plasma damage to metal oxide semiconductor devices
Application:
11/025,010 →
Publication:
US 2005/0143035
Active Cell Isolation Body of a Semiconductor Device and Method for Forming the Same
Methods of Forming Wells in Semiconductor Devices
Exposure Methods
Method of Fabricating a Fin Transistor
Semiconductor Device and Fabricating Method Thereof
Methods of Fabricating Semiconductor Devices
Method for Fabricating a Cmos Image Sensor
Methods of Fabricating Non-Volatile Memory Devices
Method for Fabricating a Mos Transistor in a Semiconductor Device Including Annealing in a Nitrogen Environment to Form a Nitrided Oxide Film
Semiconductor Device and Fabricating Method Thereof
CMOS image sensors and methods for fabricating the same
Application:
11/026,182 →
Publication:
US 2006/0049437
Semiconductor Devices and Methods for Fabricating the Same
Semiconductor Chip Packages and Methods for Fabricating the Same
Non-Volatile Memory Device Having Upper and Lower Trenches and Method for Fabricating the Same
Image sensor and method for fabricating the same
Application:
11/026,903 →
Publication:
US 2005/0139945
Method of Forming a Salicide Layer for a Semiconductor Device
Sram Devices and Methods of Fabricating the Same
Methods for Fabricating Semiconductor Devices
Method for Forming Silicide Film in Semiconductor Device
Semiconductor Devices and Methods for Fabricating the Same Including Forming an Amorphous Region in an Interface Between a Device Isolation Layer and a Source/Drain Diffusion Layer
Methods of fabricating semiconductor devices
Application:
11/027,363 →
Publication:
US 2005/0142784
Methods of Fabricating Semiconductor Devices
Method for Fabricating Semiconductor Device
Method of Fabricating Sram Device
Semiconductor Device and Fabricating Method Thereof
Method of Fabricating Mim Capacitor
Method for Fabricating Semiconductor Device
Method of Fabricating Semiconductor Device
Mono Gate Memory Device and Fabricating Method Thereof
Method of Fabricating Semiconductor Device
Semiconductor device and fabricating method thereof
Application:
11/027,852 →
Publication:
US 2005/0139888
Apparatus for Removing Liquid in Immersion Lithography Process and Method of Immersion Lithography
Method for Fabricating Flash Memory Device
Flash Memory Device and Method for Fabricating the Same
Method for Manufacturing a Transistor
Method for Fabicating a Nonvolatile Memory Device
Application:
11/121,866 →
Publication:
US 2005/0247973
Method for Fabricating a Nonvolatile Sonos Memory Device
Semiconductor Device and Method for Fabricating the Same
Methods of patterning photoresist
Application:
11/133,617 →
Publication:
US 2005/0260527
Method of forming copper interconnection in semiconductor device and semiconductor device using the same
Application:
11/143,025 →
Publication:
US 2005/0263892
Methods for Fabricating a Metal Layer Pattern
Non-Volatile Memory Devices and Methods for Driving the Same
Flash memory device and method for programming/erasing the same
Application:
11/148,982 →
Publication:
US 2005/0285184
Method of Fabricating Capacitor in Semiconductor Device and Semiconductor Device Using the Same
Capacitors in semiconductor devices and methods of fabricating the same
Application:
11/157,672 →
Publication:
US 2005/0285270
Semiconductor exposure apparatus and method for exposing semiconductor using the same
Application:
11/166,647 →
Publication:
US 2005/0286037
Method for forming barrier layer of semiconductor device
Application:
11/166,678 →
Publication:
US 2005/0287792
Ion Implantation Apparatus for Use in Manufacturing of Semiconductor Device
Method for Fabricating Cmos Image Sensor
Method of Fabricating a Cmos Image Sensor for Reducing a Dark Current
Application:
11/172,169 →
Publication:
US 2006/0001043
Method for Fabricating Semiconductor Device and Semiconductor Device Using the Same
Method for fabricating CMOS image sensor
Application:
11/175,505 →
Publication:
US 2006/0001062
Phototransistor of Cmos Image Sensor and Method for Fabricating the Same
Method for Fabricating Shallow Trench Isolation Layer of Semiconductor Device
Method for Fabricating Photodiode of Cmos Image Sensor
Method for Fabricating Cell Transistor of Flash Memory
Method for Forming Device Isolation Layer of Semiconductor Device
Method for Finishing Metal Line for Semiconductor Device
Method for Fabricating Cmos Image Sensor
Semiconductor Device and Fabrication Method Thereof
Semiconductor Device and Method for Fabricating the Same
Wafer Carrying Apparatus
Self-aligned image sensor and method for fabricating the same
Application:
11/205,543 →
Publication:
US 2006/0039044
Nonvolatile Memory Device and Method for Fabricating the Same
Method for fabricating semiconductor device
Application:
11/210,464 →
Publication:
US 2007/0048906
Method for Monitoring Micro-Lens Curvature In-Line
Cmos Image Sensor and a Method for Fabricating the Same
Dry etching apparatus
Application:
11/220,972 →
Publication:
US 2006/0096704
Cmos Image Sensor and Method for Fabricating the Same
Semiconductor device and fabricating method thereof
Application:
11/230,697 →
Publication:
US 2006/0138567
Method of Fabricating Cmos Image Sensor
Semiconductor Device Manufacturing Methods
Semiconductor Device and Method for Manufacturing the Same
Method for Fabricating Vertical Cmos Image Sensor
Apparatus for fabricating semiconductor device
Application:
11/301,820 →
Publication:
US 2006/0156982
Method of Fabricating Cmos Image Sensor
Apparatus for removing edge bead in plating process for fabricating semiconductor device
Application:
11/302,061 →
Publication:
US 2006/0137714
Method for fabricating a CMOS image sensor having a void prevention layer
Application:
11/303,188 →
Publication:
US 2006/0125020
Electrochemical plating apparatus and method
Application:
11/317,715 →
Publication:
US 2006/0137989
Method for Manufacturing Capacitor
Semiconductor device containing a high-k gate oxide layer and fabricating method thereof
Application:
11/317,987 →
Publication:
US 2006/0138570
Method of forming copper line in semiconductor device
Application:
11/319,341 →
Publication:
US 2006/0138670
Photodiode in CMOS image sensor and fabricating method thereof
Application:
11/319,813 →
Publication:
US 2006/0138494
Memory Device and Method for Manufacturing the Same
Apparatus and method for inspecting semiconductor wafers for metal residue
Application:
11/321,091 →
Publication:
US 2006/0138368
Method of forming metal line in semiconductor device
Application:
11/321,119 →
Publication:
US 2006/0141773
Method for Forming Locos Layer in Semiconductor Device
Method of Fabricating Cmos Image Sensor
Method of forming shallow trench isolation of semiconductor device
Application:
11/322,865 →
Publication:
US 2006/0145288
Cylinder-Type Capacitor and Storage Device, and Method(S) for Fabricating the Same
Method for Manufacturing Semiconductor Device
Cmos Image Sensor and Method for Fabricating the Same
Method of Simulating Semiconductor Integrated Circuit
Related Assignments
(25)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Nov 4, 2004
From: HAN, CHANG HUN
To: DONGBU ELECTRONICS CO., LTD.
Reel/Frame 015971/0784 →
Assignment of Assignor's Interest
Dec 13, 2004
From: KIM, YEONG SIL
To: DONGBU ELECTRONICS CO., LTD.
Reel/Frame 016088/0813 →
Assignment of Assignor's Interest
Dec 24, 2004
From: KIM, HAG DONG
To: DONGBUANAM SEMICONDUCTOR INC.
Reel/Frame 016129/0952 →
Assignment of Assignor's Interest
Dec 24, 2004
From: HONG, CHANG YOUNG
To: DONGBUANAM SEMICONDUCTOR INC.
Reel/Frame 016122/0879 →
Assignment of Assignor's Interest
Dec 28, 2004
From: SHIN, MOON JUNG
To: DONGBUANAM SEMICONDUCTOR, INC.
Reel/Frame 016136/0737 →
Assignment of Assignor's Interest
Dec 28, 2004
From: KOH, KWAN JOO
To: DONGBUANAM SEMICONDUCTOR INC.
Reel/Frame 016140/0084 →
Assignment of Assignor's Interest
Dec 28, 2004
From: KIM, RAE SUNG
To: DONGBUANAM SEMICONDUCTOR, INC.
Reel/Frame 016139/0513 →
Assignment of Assignor's Interest
Dec 28, 2004
From: LEE, JAE HEE
To: DONGBUANAM SEMICONDUCTOR INC.
Reel/Frame 016136/0942 →
Assignment of Assignor's Interest
Dec 28, 2004
From: CHOI, CHEE HONG
To: DONGBUANAM SEMICONDUCTOR, INC.
Reel/Frame 016142/0197 →
Assignment of Assignor's Interest
Dec 28, 2004
From: LEE, BYEONG RYEOL
To: DONGBUANAM SEMICONDUCTOR, INC.
Reel/Frame 016142/0172 →
Assignment of Assignor's Interest
Jan 27, 2005
From: LEE, SANG GI
To: DONGBUANAM SEMICONDUCTOR, INC.
Reel/Frame 016205/0856 →
Merger
May 4, 2005
From: DONGBU ELECTRONICS CO., LTD.
To: DONGBUANAM SEMICONDUCTOR INC.
Reel/Frame 016190/0167 →
Assignment of Assignor's Interest
May 6, 2005
From: LEE, SANG GI
To: DONGBUANAM SEMICONDUCTOR, INC.
Reel/Frame 016541/0899 →
Merger
May 31, 2005
From: ANAM SEMICONDUCTOR INC.; ANAM SEMICONDUCTOR INC.
To: DONGBUANAM SEMICONDUCTOR, INC., A KOREAN CORPORATION
Reel/Frame 016593/0917 →
Merger
May 31, 2005
From: DONGBU SEMICONDUCTOR INC.
To: DONGBUANAM SEMICONDUCTOR, INC.
Reel/Frame 016593/0667 →
Assignment of Assignor's Interest
Jul 1, 2005
From: AHN, HEUI GYUN
To: DONGBUANAM SEMICONDUCTOR, INC.
Reel/Frame 016737/0012 →
Assignment of Assignor's Interest
Feb 8, 2006
From: LEE, SANG GI
To: DONGBUANAM SEMICONDUCTOR INC.
Reel/Frame 017142/0058 →
Assignment of Assignor's Interest
May 28, 2014
From: DONGBU HITEK CO., LTD.
To: DSS TECHNOLOGY MANAGEMENT, INC.
Reel/Frame 033035/0680 →
Assignment of Assignor's Interest
Oct 15, 2014
From: DONGBU HITEK, CO., LTD.
To: INPHI CORPORATION
Reel/Frame 034009/0157 →
Corrective Assignment to Correct Remove Patent No. 878209 from Exhibit B Previously Recorded at Reel: 034009 Frame: 0157. Assignor(S) Hereby Confirms the Assignment.
Oct 24, 2014
From: DONGBU HITEK, CO., LTD.
To: INPHI CORPORATION
Reel/Frame 034087/0097 →
Confirmatory Assignment
Jan 29, 2015
From: HAN, CHUNG HUN
To: DONGBU ELECTRONICS CO., LTD.
Reel/Frame 034863/0275 →
Assignment of Assignor's Interest
Apr 7, 2015
From: DONGBU ELECTRONICS CO., LTD.
To: III HOLDINGS 4, LLC
Reel/Frame 035383/0560 →
Assignment of Assignor's Interest
Feb 22, 2017
From: DONGBU HITEK, CO., LTD.
To: INPHI CORPORATION
Reel/Frame 041347/0677 →
Assignment of Assignor's Interest
Feb 23, 2017
From: DONGBU HITEK, CO., LTD.
To: INPHI CORPORATION
Reel/Frame 041364/0060 →
Assignment of Assignor's Interest
Feb 23, 2017
From: DONGBU HITEK, CO., LTD.
To: INPHI CORPORATION
Reel/Frame 041363/0818 →