Semiconductor chip packages and methods for fabricating the same
View Patent ↗Semiconductor chip packages of a wafer level and method for fabricating the same are disclosed, in which a wafer electrode pad is connected with an external circuit by a via-electrode penetrating a silicon wafer. An illustrated example package includes a wafer having a first surface and a second surface opposite the first surface; a semiconductor device having at least one of electrode pad on the first surface; a protective layer covering the first surface of the silicon wafer; a via-hole from the second surface to the electrode pad on the first surface, a via electrode within the via-hole; and a solder ball or a solder bump on the second surface for electrical connection between the via-electrode and an external circuit.
1. A method for fabricating a semiconductor chip package comprising:
preparing a silicon wafer having a first surface and a second surface opposite the first surface;
forming a semiconductor device having at least one electrode pad on the first surface of the silicon wafer;
forming a via-hole from the second surface to the electrode pad on the first surface;
forming a via-electrode within the via-hole;
forming a protective layer covering the first surface;
polishing the second surface to reduce a thickness of the silicon wafer; and
forming a solder bump or a solder ball on the second surface for electrical connection between the via-electrode and an external circuit.
2. A method as defined in claim 1 , further comprising forming a barrier metal layer on a surface of the via-hole before forming the via-electrode.
3. A method as defined in claim 2 , wherein the barrier metal layer is formed of any one of titanium, titanium nitride, tantalum nitride, Ti/TiN, or Ta/TaN.
4. A method as defined in claim 1 , further comprising forming a baffler metal layer on a surface of the via-electrode which is exposed toward the second surface before forming the solder bump or the solder ball.
5. A method as defined in claim 4 , wherein the barrier metal layer is formed of any one of titanium, titanium nitride, tantalum nitride, Ti/TiN, or Ta/TaN.
6. A method as defined in claim 1 , further comprising forming a solder mask before forming the solder bump or the solder ball.
7. A method as defined in claim 1 , wherein the protective layer is formed of polyimide.
8. A method as defined in claim 1 , wherein the via-hole is formed in a laser process or an RIC process.
9. A method as defined in claim 1 , wherein the via-electrode is formed by an electric gliding process, a vacuum evaporation process, a CVD process, or a screen printing process.
10. A method as defined in claim 1 , wherein the via-electrode is formed of any one of gold, silver, copper, aluminum, or nickel.
11. A method as defined in claim 1 , wherein the second surface is polished in a CMP process.
12. A method as defined in claim 1 , further comprising dividing the wafer into individual chips by sawing.