IP Library Granted Patent US 7,273,502
Granted Patent B2
US 7,273,502 · App. 11/317,986 · Granted Sep 25, 2007

Method for manufacturing capacitor

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Quick Facts
Patent No.
US 7,273,502
App. No.
11/317,986
Granted
Sep 25, 2007
Kind
B2
Abstract

A capacitor and a method for manufacturing the same provide a branched capacitor with a large capacitance and a super-slim structure. The method includes sintering a ceramic substrate; forming a plurality of troughs in the sintered ceramic substrate, the plurality of troughs including first and second sets of troughs corresponding to opposing electrodes; and filling the troughs with metal to form a plurality of metal lines arranged alternately in the plurality of troughs.

Claims (32)

1. A method for manufacturing a capacitor, comprising:

forming a plurality of troughs in a ceramic substrate, the plurality of troughs including first and second sets of troughs corresponding to opposing electrodes;

filling the troughs with metal to form a plurality of metal lines in the plurality of troughs; and

exposing opposite ends of the metal lines by sawing the ceramic substrate and grinding corresponding opposite ends of the ceramic substrate.

2. The method as claimed in claim 1 , further comprising:

forming first and second electrode terminals respectively connected electrically to opposite ends of the metal lines, the metal lines in the first set of troughs being connected to first electrode terminal and the metal lines in the second set of troughs being connected to the second electrode terminal.

3. The method as claimed in claim 2 , wherein the first set of troughs include an extension at one end, the second set of troughs include an extension at an opposite end, and the first and second sets of troughs are in an alternating arrangement.

4. The method as claimed in claim 3 , wherein said exposing exposes the extension of one set of the troughs and does not expose another set of the troughs.

5. The method as claimed in claim 3 , wherein the extensions of any two adjacent troughs occur at opposite ends.

6. The method as claimed in claim 1 , wherein exposing the opposite ends of the metal lines comprises sawing the ceramic substrate and grinding corresponding opposite ends of the ceramic substrate.

7. The method as claimed in claim 6 , further comprising:

forming first and second electrode terminals on the exposed opposite ends of the metal lines, respectively.

8. The method as claimed in claim 7 , wherein the first and second electrode terminals each include at least one of silver and gold.

9. The method as claimed in claim 1 , wherein the ceramic substrate comprises a ceramic material including at least one of barium titanate and lead zirconium titanate.

10. The method as claimed in claim 1 , wherein the ceramic substrate comprises a ceramic material including silicon dioxide.

11. The method as claimed in claim 1 , further comprising:

sintering the ceramic substrate, prior to forming the plurality of trough patterns therein.

12. The method as claimed in claim 11 , wherein said sintering is performed at a temperature above 1000° C.

13. The method as claimed in claim 1 , wherein forming said plurality of troughs comprises:

preparing a layout for a trough pattern;

transferring the layout onto the ceramic substrate by performing a photolithographic process; and

forming grooves corresponding to the transferred trough pattern in the ceramic substrate by selective etching.

14. The method as claimed in claim 1 , further comprising, after filling the troughs with metal, back grinding the ceramic substrate.

15. The method as claimed in claim 13 , further comprising:

sawing the ceramic substrate into shots corresponding to areas of the trough pattern.

16. The method as claimed in claim 1 , said filling comprising:

depositing a metal thin film on the ceramic substrate; and

heating the deposited metal thin film to a temperature above the melting point of the metal.

17. The method as claimed in claim 16 , further comprising:

pressurizing the heated metal thin film under a nitrogen ambient to fill the troughs.

18. The method as claimed in claim 17 , further comprising:

draining the ceramic substrate from a bottom side, the bottom side being opposite the deposited metal thin film.

Assignments (4)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 28, 2014
From: DONGBU HITEK CO., LTD.
To: DSS TECHNOLOGY MANAGEMENT, INC.
Reel/Frame 033035/0680 →
CORRECTIVE ASSIGNMENT TO CORRECT THE ASSIGNOR PREVIOUSLY RECORDED ON REEL 017654 FRAME 0078. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNOR SHOULD BE "DONGBUANAM SEMICONDUCTOR INC.". Recorded Jun 22, 2006
From: DONGBUANAM SEMICONDUCTOR INC.
To: DONGBU ELECTRONICS CO., LTD.
Reel/Frame 017829/0911 →
CHANGE OF NAME Recorded May 22, 2006
From: DONGANAM SEMICONDUCTOR INC.
To: DONGBU ELECTRONICS CO., LTD.
Reel/Frame 017654/0078 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 24, 2006
From: CHOI, KEE JOON
To: DONGBUANAM SEMICONDUCTOR INC.
Reel/Frame 017056/0789 →