Apparatus for removing edge bead in plating process for fabricating semiconductor device
An apparatus for removing an edge bead in, e.g., a plating process for fabricating a semiconductor device is provided, by which a wafer surface may be prevented from being oxidized by a chemical used in an edge bead removal (EBR) process. The apparatus may includes a spin chuck; a wafer on the spin chuck having a metal layer thereon; a nozzle for spraying a chemical on an edge of the wafer; and a cover shield having a bent (or curved) portion opposing a lateral side of the wafer. Accordingly, the bent or curved portion of the sidewall of the cover shield prevents or reduces the incidence of back splash of the chemical spun off the wafer in EBR process, thereby preventing or reducing the occurrence of defects such as the stripe pattern (or other surface oxidation) due to the wafer's contact with the chemical other than at the edge.
1 . An apparatus for removing an edge bead in a plating process, comprising:
a spin chuck;
a substrate on the spin chuck having a plated metal layer thereon;
a nozzle configured to spray a chemical on an edge of the substrate; and
a cover shield having a bent portion opposing a lateral side of the wafer, configured to cover the wafer.
2 . The apparatus of claim 1 , wherein the bent portion is bent in a direction opposite to the lateral side of the wafer.
3 . The apparatus of claim 1 , wherein the bent portion comprises a tilted, substantially linear surface.
4 . The apparatus of claim 1 , wherein the bent portion comprises a curved surface.
5 . The apparatus of claim 1 , wherein the metal layer comprises a copper-based material.
6 . The apparatus of claim 1 , the cover shield comprising:
a sidewall for encircling the loaded wafer.
7 . The apparatus of claim 6 , wherein the sidewall is substantially vertical, except for the bent portion.
8 . The apparatus of claim 6 , wherein the bent portion of the cover shield occurs along a portion of the sidewall corresponding to a height of the loaded wafer.
9 . An apparatus for removing an edge bead from a metal layer on a semiconductor device, comprising:
a spin chuck configured to hold and spin a wafer;
a nozzle configured to spray a chemical on an edge of the wafer; and
a cover shield having a sidewall adapted to encircle the wafer, the sidewall having a bent portion in a portion thereof corresponding to a horizontal height of the wafer.
10 . The apparatus of claim 9 , wherein the bent portion of the cover shield has a prescribed angle.
11 . The apparatus of claim 9 , wherein, when the wafer is spun on the spin chuck, the bent portion directs the chemical from the edge of the wafer downward.
12 . The apparatus of claim 9 , wherein the bent portion has an upper endpoint no more than 100 mm above the horizontal height of the wafer, and a lower endpoint no more than 10 mm below the horizontal height of the wafer.
13 . The apparatus of claim 9 , wherein the bent portion comprises a curved portion having an arc.
14 . A method of removing an edge bead from a wafer having a metal layer on its upper surface, comprising:
mounting the wafer on a spin chuck in an apparatus configured to remove the edge bead;
covering or encircling the wafer with a cover shield having a bent portion opposing an edge of the wafer;
spraying a chemical adapted to remove the edge bead onto an edge of the substrate; and
spinning the wafer.
15 . The method of claim 14 , wherein the bent portion of the cover shield has a prescribed angle.
16 . The method of claim 14 , further comprising directing the chemical spun off the edge of the wafer downward.