Method for finishing metal line for semiconductor device

1. A method for post-treating a metal line for a semiconductor device, comprising:

forming a metal film on a substrate;

forming a photoresist pattern over the metal film;

patterning by etching the metal film by a plasma including chlorine using the photoresist pattern as a mask;

removing a chlorine radical on a surface of the patterned metal film using an H 2 O plasma;

stripping the photoresist pattern using an O 2 plasma;

flowing an H 2 O gas into a chamber containing the substrate at a power of 0 W and a flow rate of 800 sccm to 1200 sccm; and

removing a polymer generated when etching the metal film, using the H 2 O gas and hydrogen fluoride (HF) gas in the chamber at the power of 0 W.

2. The method of claim 1 , wherein the chamber containing the H 2 O plasma has conditions including a pressure of 0.4 Torr to 0.6 Torr, a power of 400 W to 600 W, an H 2 O flow rate of 400 sccm to 600 sccm, and a temperature of 300° C. or below.

3. The method of claim 1 , wherein the conditions of flowing H 2 O gas further include a pressure of 0.4 Torr to 0.6 Torr, a time of 10 sec. or below, and a temperature of 300° C. or below.

4. The method of claim 1 , wherein the chamber containing the O 2 plasma has conditions including a pressure of 0.8 Torr to 1.2 Torr, a power of 1000 W to 1500 W, an O 2 flow rate of 3000 sccm to 4000 sccm, and a temperature of room temperature or below.

5. The method of claim 1 , wherein a flow rate ratio of the H 2 O gas to the HF gas is 80:1 or above.

6. The method of claim 1 , wherein the H 2 O gas and the HF gas have a total flow rate of 800 sccm to 1200 sccm.

7. The method of claim 1 , wherein the metal film includes an aluminum film or an aluminum alloy.

8. The method of claim 1 , wherein etching the metal film comprises dry-etching, and the plasma comprises Cl 2 or BCl 3 .

9. The method of claim 1 , wherein removing the chlorine radical is performed for a length of time of from 40 sec. to 60 sec.

10. The method of claim 1 , wherein removing the polymer is performed for a length of time of from 50 sec. or below.

11. The method of claim 10 , wherein removing the polymer is performed under conditions further including a pressure of 0.4 Torr to 0.6 Torr, an H 2 O flow rate of 800 sccm to 1200 sccm, and a temperature of 300° C. or below.

12. The method of claim 11 , wherein removing the polymer is performed under conditions further including an HF flow rate of 10 sccm.

13. The method of claim 1 , wherein removing the polymer is performed for a length of time of at least 30 sec.

14. The method of claim 1 , wherein flowing the the H 2 O gas is performed for a length of time of at least 5 sec.

15. A method for post-treating a metal line for a semiconductor device, comprising:

sequentially forming a barrier film, a metal film and an antireflective coating film on a substrate;

forming a photoresist pattern over the metal film;

patterning by etching the barrier film, the metal film and the antireflective coating film by a plasma including chlorine using the photoresist pattern as a mask;

removing a chlorine radical on a surface of the patterned metal film using an H 2 O plasma;

stripping the photoresist pattern using an O 2 plasma;

flowing an H 2 O gas into a chamber containing the substrate at a power of 0 W and a flow rate of 800 sccm to 1200 sccm; and

removing a polymer generated when etching the metal film, using the H 2 O gas and hydrogen fluoride (HF) gas in the chamber at the power of 0 W.

16. The method of claim 15 , wherein the chamber containing the H 2 O plasma has conditions including a pressure of 0.4 Torr to 0.6 Torr, a power of 400 W to 600 W, an H 2 O flow rate of 400 sccm to 600 sccm, and a temperature of 300° C. or below.

17. The method of claim 15 , wherein the conditions of flowing H 2 O gas further include a pressure of 0.4 Torr to 0.6 Torr, a time of 10 sec. or below, and a temperature of 300° C. or below.

18. The method of claim 15 , wherein the chamber containing the O 2 plasma has conditions including a pressure of 0.8 Torr to 1.2 Torr, a power of 1000 W to 1500 W, an O 2 flow rate of 3000 sccm to 4000 sccm, and a temperature of room temperature or below.

19. The method of claim 15 , wherein a flow rate ratio of the H 2 O gas to the HF gas is 80:1 or above.

20. The method of claim 15 , wherein the H 2 O gas and the HF gas have a total flow rate of 800 sccm to 1200 sccm.

21. The method of claim 15 , wherein the metal film includes an aluminum film or an aluminum alloy.

22. The method of claim 15 , wherein etching the metal film comprises dry-etching, and thc plasma comprises Cl 2 or BCl 3 .

23. The method of claim 15 , wherein removing the chlorine radical is performed for a length of time of from 40 sec. to 60 sec.

24. The method of claim 15 , wherein removing the polymer is performed for a length of time of from 50 sec. or below.

25. The method of claim 24 , wherein removing the polymer is performed under conditions further including a pressure of 0.4 Torr to 0.6 Torr, an H 2 O flow rate of 800 sccm to 1200 sccm, and a temperature of 300° C. or below.

26. The method of claim 25 , wherein removing the polymer is performed under conditions further including an HF flow rate of 10 sccm.

27. The method of claim 15 , wherein removing the polymer is performed for a length of time of at least 30 sec.

28. The method of claim 15 , wherein flowing the the H 2 O gas is performed for a length of time of at least 5 sec.