Ion implantation ion source, system and method
View Patent ↗The ionization chamber is defined by a removable block disposed in heat transfer relationship to a temperature controlled mounting block, preferably the removable block comprised of graphite, silicon carbide or aluminum. The ion source includes a mounting flange for joining the ion source to the housing of an ion implanter, the ionization chamber being located on the inside of the mounting flange and the vaporizer being removably mounted to the exterior of the mounting flange via at least one isolation valve which is separable from the mounting flange with the vaporizer, enabling the vaporizer charge volume to be isolated by the valve in closed position during handling, preferably there being two isolation valve in series, one unified with and transportable with a removed vaporizer unit, and one constructed to remain with and isolate the remainder of the ion source from the atmosphere. In certain preferred embodiments, two such vaporizers are provided, enabling one to be absent, while being charged or serviced, while the other operates, or enabling two different materials to be vaporized without maintenance of the ion source, or enabling additional quantities of the same materials to be present to enable a protracted implant run.
1. A method for upgrading an ion implanter having an existing ion source which provides predetermined ion beam generation capabilities, a magnetic field source and a mass resolving aperture, the method comprising the steps of:
(a) removing the existing ion source, and
(b) replacing the existing ion source with another ion source which provides different ion beam generation capabilities than said existing ion source.
2. The method as recited in claim 1 , wherein step (a) comprises:
(a) removing an existing ion source which does not generate cluster ions.
3. The method as recited in claim 2 , wherein step (a) comprises:
(a) removing an existing Bernas-type ion source.
4. The method as recited in claim 2 , wherein step (a) comprises:
(a) removing an existing Freeman-type ion source.
5. The method as recited in claim 1 , wherein step (b) comprises:
(b) replacing said existing ion source with a cluster generating ion source.
6. The method as recited in claim 1 , wherein step (a) comprises:
(a) removing said existing ion source, said existing ion source being of the arc-discharge type.
7. The method as recited in claim 6 , wherein step (b) comprises:
(b) replacing said existing ion source with a plasma ion source without an arc discharge.
8. The method as recited in claim 1 , wherein step (b) comprises:
(b) replacing said existing ion source with an electron-impact ion source.
9. The method as recited in claim 8 , wherein step (b) comprises:
(b) replacing said existing ion source with an electron-impact ion source for implanting cluster ions.
10. The method as recited in claim 1 , wherein step (b) comprises:
(b) replacing said existing ion source with an ion source for implanting decaborone cluster ions.
11. The method as recited in claim 1 , wherein step (b) comprises:
(b) replacing said existing ion source with an arc plasma discharge type ion source.
12. A method for upgrading an ion implanter having an existing single mode ion source, a magnetic field source and a mass resolving aperture, the method comprising the steps of:
(a) removing the existing single mode ion source; and
(b) replacing said existing single mode ion source with a new dual-mode ion source.
13. The method as recited in claim 12 , wherein step (b) comprises:
(b) replacing said existing single-mode ion source with a dual-mode ion source, having a non-reflex mode and a reflex mode.