Substrate for growing electro-optical single crystal thin film and method of manufacturing the same
View Patent ↗A substrate 1 for growing an electro-optical single crystal thin film in which two or more layers of buffer layers 3, 4 , and 5 for buffering lattice mismatch between Si and BTO are formed on an Si (001) substrate 2 is provided as a substrate for growing an electro-optical single crystal thin film which can obtain an electro-optical single crystal thin film of BTO single crystal thin film 6 etc. with a large size and a very high quality.
1. A substrate for epitaxially growing an electro-optical single crystal thin film, wherein two or more layers of buffer layers are formed which buffer lattice mismatch between Si and the electro-optical single crystal thin film on an Si (001) substrate, wherein said buffer layer is constituted by an SrTiO 3 (STO) single-crystal layer and a BaTiO 3 (BTO) single-crystal layer which are formed in order on the Si (001) substrate.
2. The substrate for growing the electro-optical single crystal thin film according to claim 1 , wherein a mixed crystal layer of STO and BTO is interposed between said STO single crystal layer and BTO single crystal layer.
3. The substrate for growing the electro-optical single crystal thin film according to claim 1 , wherein said buffer layer is constituted by an STO single crystal layer and a mixed crystal layer of STO and BTO which are formed in order on the Si (001) substrate.
4. The substrate for growing the electro-optical single crystal thin film according to claim 1 , wherein said electro-optical single crystal thin film is BTO.
5. A method of manufacturing a substrate for epitaxially growing an electro-optical single crystal thin film, wherein two or more layers of buffer layers which buffer lattice mismatch between Si and the electro-optical single crystal thin film are stacked in order on an Si (001) substrate by way of epitaxial growth,
wherein said buffer layer is constituted by an SrTiO 3 (STO) single crystal layer and a BaTiO 3 (BTO) single crystal layer which are stacked in order on the Si (001) substrate by way of epitaxial growth.
6. The method of manufacturing the substrate for growing the electro-optical single crystal thin film according to claim 5 , wherein a mixed crystal layer of STO and BTO is stacked on STO single crystal layer by way of epitaxial growth before epitaxially growing said BTO single crystal layer.
7. The method of manufacturing the substrate for growing the electro-optical single crystal thin film according to claim 5 , wherein said buffer layer is constituted by an STO single crystal layer and a mixed crystal layer of STO and BTO which are stacked in order on the Si (001) substrate by way of epitaxial growth.