Patterning CNT emitters
An industrial scale method for patterning nanoparticle emitters for use as cathodes in a display device is disclosed. The low temperature method can be practiced in high volume applications, with good uniformity of the resulting display device. The method steps involve deposition of CNT emitter material over an entire surface of a prefabricated composite structure, and subsequent removal of the CNT emitter material from unwanted portions of the surface using physical methods.
1 . A method of patterning nanoparticle field emitters, comprising the steps of:
providing a structure on which to pattern the nanoparticle field emitters;
depositing a uniform layer of nanoparticle material over the entire surface of said structure; and
removing said layer of nanoparticle material from undesired regions of said surface of said structure using physical methods.
2 . The method recited in claim 1 , wherein said depositing is performed by a process chosen from the group comprising:
spraying; screen printing; electrophoresis deposition; dipping;
ink-jet printing; dispensing; spin-coating; brushing; and
any combination thereof.
3 . The method recited in claim 1 , wherein said nanoparticle material comprises material chosen from the group comprising:
single wall carbon nanotubes; double wall carbon nanotubes;
multiwall carbon nanotubes; buckytubes; carbon fibrils;
chemically modified carbon nanotubes; derivatized carbon nanotubes;
metallic carbon nanotubes; semiconducting carbon nanotubes;
metallized carbon nanotubes; graphite; carbon whiskers; and
any combination thereof.
4 . The method recited in claim 1 , wherein said nanoparticle material comprises particles chosen from the group comprising:
spherical particles; dish-shaped particles; lamellar particles; rod-like particles; metallic particles; semiconducting particles; polymeric particles; ceramic particles; dielectric particles; clay particles; fibers; nanoparticles; and any combination thereof.
5 . The method recited in claim 1 , wherein said layer of nanoparticle material has a thickness which ranges from about 10 nm to about 1 mm.
6 . The method recited in claim 1 , wherein said structure and said nanoparticle material are not exposed to temperatures higher than about 150° C.
7 . The method recited in claim 1 , wherein said removing is performed by a physical method chosen from the group comprising:
taping; sandblasting; beadblasting; jetting; grinding; polishing; mechanical etching; scraping; ablation; erosion; and
any combination thereof.
8 . The method recited in claim 1 , wherein said structure is formed as a solid-state composite structure with individual layers, using a process to apply the individual layers comprising the steps of:
providing an insulating glass or ceramic substrate; and
forming an electrically conducting material deposited as a patterned layer on the surface of said substrate.
9 . The method as recited in claim 8 , further comprising the step of:
forming an electrically insulating material deposited as a patterned layer on the surface of said substrate over said patterned layer of said electrically conducting material.
10 . The method recited in claim 8 , wherein the patterning of said electrically conducting material is performed with a standard screen printing process.