Top anti-reflective coating composition and method for pattern formation of semiconductor device using the same
Disclosed herein is a top anti-reflective coating composition which comprises a photoacid generator represented by Formula 1 below. wherein n is between 7 and 25. Since the top anti-reflective coating composition dissolves a portion of a photoacid generator present at the top of an underlying photosensitizer, particularly, upon formation of a top anti-reflective coating, it can prevent the top from being formed into a thick section. Therefore, the use of the anti-reflective coating composition enables the formation of a vertical pattern on a semiconductor device.
1. A top anti-reflective coating composition, comprising:
a top anti-reflective coating polymer selected from the group consisting of:
poly(t-butylacrylate-acrylic acid-3-hydroxypropylmethacrylate) of Formula 1 below:
wherein a, b and c represent the mole fraction of each monomer and are in the range between about 0.05 and about 0.9, and the sum of a, b, and c equals one;
poly(t-butylacrylate-acrylic acid-N-isopropylacrylamide) of Formula 2 below:
wherein a, b and c are as defined in Formula 1; and,
poly(t-butylacrylate-acrylic acid-2-hydroxyethylmethacrylate) of Formula 3 below:
wherein a, b and c are as defined in Formula 1;
a photoacid generator represented by Formula 4 below:
wherein n is between 7 and 25; and,
an organic solvent.
2. The composition according to claim 1 , wherein the photoacid generator of Formula 4 is triphenylsulfonium perfluorooctanesulfonate.
3. The composition according to claim 1 , wherein the composition comprises about 0.05 to about 5 wt % of the photoacid generator, based on the weight of the top anti-reflective coating polymer.
4. The composition according to claim 1 , wherein the organic solvent is a primary alcohol.
5. The composition according to claim 4 , wherein the primary alcohol is n-butanol.
6. The composition according to claim 5 , wherein the composition is prepared by dissolving the top anti-reflective coating polymer in about 1,000 to about 10,000 wt % of n-butanol, based on the weight of the polymer.
7. The composition according to claim 1 , further comprising an acid diffusion inhibitor.
8. The composition according to claim 7 , wherein the acid diffusion inhibitor is L-proline.
9. The composition according to claim 8 , wherein the composition comprises about 1 to about 20 wt % of L-proline, based on the weight of the top anti-reflective coating polymer.
10. The composition according to claim 1 , wherein the composition has a refractive index between about 1.5 and about 1.65.
11. A semiconductor device comprising the top anti-reflective coating composition of claim 1 .
12. A method for forming a pattern of a semiconductor device, comprising:
(a) applying a photoresist to a semiconductor substrate on which an underlying structure is formed;
(b) applying a top anti-reflective coating composition on top of the photoresist to form a top anti-reflective coating;
(c) exposing the photoresist to light; and,
(d) developing the photoresist to form a photoresist pattern;
wherein the top anti-reflective coating composition comprises:
a top anti-reflective coating polymer;
a photoacid generator represented by Formula 5 below:
wherein n is between 7 and 25; and,
an organic solvent.
13. The method according to claim 12 , further comprising baking the substrate before and/or after the exposure.
14. The method according to claim 13 , wherein the baking is carried out in the range of about 70° C. to about 200° C.
15. The method according to claim 12 , wherein water is used as a medium for the light source in the exposure.
16. The method according to claim 12 , wherein the development is carried out using a 0.01 to about 5% (w/w) solution of tetramethylammoniumhydroxide (TMAH) in water as a developing solution.
17. A top anti-reflective coating composition, comprising:
a top anti-reflective coating polymer;
a photoacid generator represented by Formula 6 below:
wherein n is between 7 and 25; and,
a primary alcohol organic solvent.
18. The composition according to claim 17 , wherein the photoacid generator of Formula 6 is triphenylsulfonium perfluorooctanesulfonate.
19. The composition according to claim 17 , wherein the composition comprises about 0.05 to about 5 wt % of the photoacid generator, based on the weight of the top anti-reflective coating polymer.
20. The composition according to claim 17 , wherein the primary alcohol is n-butanol.
21. The composition according to claim 20 , wherein the composition is prepared by dissolving the top anti-reflective coating polymer in about 1,000 to about 10,000 wt % of n-butanol, based on the weight of the polymer.
22. The composition according to claim 17 , further comprising an acid diffusion inhibitor.
23. The composition according to claim 22 , wherein the acid diffusion inhibitor is L-proline.
24. The composition according to claim 23 , wherein the composition comprises about 1 to about 20 wt % of L-proline, based on the weight of the top anti-reflective coating polymer.
25. A semiconductor device comprising the top anti-reflective coating composition of claim 17 .
26. A top anti-reflective coating composition, comprising:
a top anti-reflective coating polymer;
a photoacid generator represented by Formula 7 below:
wherein n is between 7 and 25; and,
an organic solvent;
wherein the composition comprises about 0.05 to about 5 wt % of the photoacid generator, based on the weight of the top anti-reflective coating polymer.
27. The composition according to claim 26 , wherein the photoacid generator of Formula 7 is triphenylsulfonium perfluorooctanesulfonate.
28. The composition according to claim 26 , wherein the organic solvent is n-butanol.
29. The composition according to claim 28 , wherein the composition is prepared by dissolving the top anti-reflective coating polymer in about 1,000 to about 10,000 wt % of n-butanol, based on the weight of the polymer.
30. The composition according to claim 26 , further comprising an acid diffusion inhibitor.
31. The composition according to claim 30 , wherein the acid diffusion inhibitor is L-proline.
32. The composition according to claim 31 , wherein the composition comprises about 1 to about 20 wt % of L-proline, based on the weight of the top anti-reflective coating polymer.
33. A semiconductor device comprising the top anti-reflective coating composition of claim 26 .
34. A top anti-reflective coating composition, comprising:
a top anti-reflective coating polymer;
a photoacid generator represented by Formula 8 below:
wherein n is between 7 and 25;
an organic solvent; and,
L-proline as an acid diffusion inhibitor.
35. The composition according to claim 34 , wherein the photoacid generator of Formula 8 is triphenylsulfonium perfluorooctanesulfonate.
36. The composition according to claim 34 , wherein the organic solvent is n-butanol.
37. The composition according to claim 36 , wherein the composition is prepared by dissolving the top anti-reflective coating polymer in about 1,000 to about 10,000 wt % of n-butanol, based on the weight of the polymer.
38. The composition according to claim 34 , wherein the composition comprises about 1 to about 20 wt % of L-proline, based on the weight of the top anti-reflective coating polymer.
39. A semiconductor device comprising the top anti-reflective coating composition of claim 34 .