Semiconductor device and method for manufacturing the same
View Patent ↗Enhanced step coverage and reduced resistivity of a TaSiN layer may be achieved when a semiconductor device is manufactured by: forming an interlayer insulating layer on a semiconductor substrate, the interlayer insulating layer having a contact hole that partially exposes the substrate; depositing a TaN thin film on the interlayer insulating layer and in the contact hole using a reaction gas containing a Ta precursor and a nitrogen source gas; removing impurities from the TaN thin film; forming a TaSiN thin film by reacting the impurity-removed TaN thin film with a silicon source gas, and repeating the TaN-depositing, impurity-removing, and silicon source gas-reacting steps.
1. A method for manufacturing a semiconductor device, comprising:
(a) forming an insulating layer on a semiconductor substrate, the insulating layer having a contact hole that partially exposes the substrate;
(b) depositing a TaN thin film on the insulating layer including in the contact hole by atomic layer deposition (ALD) using a reaction gas containing a Ta precursor and a nitrogen source gas, wherein depositing the TaN thin film comprises thermally decomposing the Ta precursor;
(c) removing impurities from the TaN thin film;
(d) forming a TaSiN thin film by reacting the impurity-removed TaN thin film with a silicon source gas; and
(e) repeating steps (b) and (d) at least once to form a diffusion barrier comprising a plurality of TaSiN thin films.
2. The method of claim 1 , wherein the Ta precursor comprises a member selected from the group consisting of tertbutylimido(trisdiethylamide)tantalum (TBTDET), pentakis(diethylamide)tantalum (PDEAT), pentakis(diethylamide)tantalum (PDMAT) and pentakis(ethylmethylamino)tantalum (PEMAT).
3. The method of claim 1 , wherein the nitrogen source gas comprises NH 3 or N 2 .
4. The method of claim 1 , wherein step (b) further comprises heating the substrate to a temperature of 170 to 500° C.
5. The method of claim 1 , wherein the TaN thin film is deposited to a thickness of 2 to 100 Å.
6. The method of claim 1 , wherein removing impurities comprises plasma processing using a hydrogen containing gas.
7. The method of claim 6 , wherein the hydrogen containing gas comprises H 2 or NH 3 .
8. The method of claim 6 , wherein the plasma processing is performed under a plasma power of 100-400 W for 3 to 35 seconds.
9. The method of claim 6 , wherein the plasma processing further uses a noble gas.
10. The method of claim 1 , wherein the silicon source gas comprises SiH 4 .
11. The method of claim 7 , wherein the hydrogen containing gas comprises H 2 .
12. The method of claim 11 , wherein the hydrogen containing gas further comprises N 2 .
13. The method of claim 1 , wherein the Ta precursor comprises a tantalum compound of the formula Ta(NR 2 ) 5 or R′N═Ta(NR 2 ) 3 , where R and R′ are independently an alkyl, cycloalkyl, alkenyl, cycloalkenyl or aryl group.
14. The method of claim 1 , wherein the Si source gas comprises a silane of the formula Si x H y , where x is an integer of from 1 to 4 and y is 2x+2, and when x is 3 or 4, y may be 2x.
15. The method of claim 6 , wherein plasma processing occurs under a plasma power of 100-400 W for a time sufficient to reduce the carbon content of the TaN thin film.
16. The method of claim 1 , comprising repeating steps (b)-(d) two or more times.
17. The method of claim 1 , comprising repeating steps (b)-(d) from a few times to a few hundred times.